David Moran
David Moran
Dirección de correo verificada de glasgow.ac.uk - Página principal
TítuloCitado porAño
Enhancement-mode GaAs MOSFETs with an In0. 3 Ga0. 7As channel, a mobility of over 5000 cm2/V· s, and transconductance of over 475 μS/μm
RJW Hill, DAJ Moran, X Li, H Zhou, D Macintyre, S Thoms, A Asenov, ...
IEEE Electron Device Letters 28 (12), 1080-1082, 2007
2082007
High mobility III-V MOSFETs for RF and digital applications
M Passlack, P Zurcher, K Rajagopalan, R Droopad, J Abrokwah, M Tutt, ...
2007 IEEE International Electron Devices Meeting, 621-624, 2007
982007
50-nm T-gate metamorphic GaAs HEMTs with f/sub T/of 440 GHz and noise figure of 0.7 dB at 26 GHz
K Elgaid, H McLelland, M Holland, DAJ Moran, CR Stanley, IG Thayne
IEEE Electron Device Letters 26 (11), 784-786, 2005
702005
Hydrogen-terminated diamond field-effect transistors with cutoff frequency of 53 GHz
SAO Russell, S Sharabi, A Tallaire, DAJ Moran
IEEE Electron Device Letters 33 (10), 1471-1473, 2012
642012
Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study
SAO Russell, L Cao, D Qi, A Tallaire, KG Crawford, ATS Wee, DAJ Moran
Applied Physics Letters 103 (20), 202112, 2013
562013
Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability
KG Crawford, L Cao, D Qi, A Tallaire, E Limiti, C Verona, ATS Wee, ...
Applied Physics Letters 108 (4), 042103, 2016
412016
Scaling of hydrogen-terminated diamond FETs to sub-100-nm gate dimensions
DAJ Moran, OJL Fox, H McLelland, S Russell, PW May
IEEE Electron Device Letters 32 (5), 599-601, 2011
392011
1 µm gate length, In0. 75Ga0. 25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 µS/μm
RJW Hill, R Droopad, DAJ Moran, X Li, H Zhou, D Macintyre, S Thoms, ...
Electronics Letters 44 (7), 498-500, 2008
36*2008
50-nm self-aligned and “standard” T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node
DAJ Moran, H McLelland, K Elgaid, G Whyte, CR Stanley, I Thayne
IEEE Transactions on Electron Devices 53 (12), 2920-2925, 2006
332006
Fabrication of high electron mobility transistors with T-gates by nanoimprint lithography
Y Chen, D Macintyre, E Boyd, D Moran, I Thayne, S Thoms
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
312002
Fabrication of ultrashort T gates using a PMMA/LOR/UVIII resist stack
Y Chen, DS Macintyre, X Cao, E Boyd, D Moran, H McLelland, M Holland, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
302003
RF operation of hydrogen-terminated diamond field effect transistors: A comparative study
S Russell, S Sharabi, A Tallaire, DAJ Moran
IEEE Transactions on Electron Devices 62 (3), 751-756, 2015
292015
Gallium oxide (Ga2 O3) on gallium arsenide—A low defect, high-K system for future devices
GW Paterson, JA Wilson, D Moran, R Hill, AR Long, I Thayne, M Passlack, ...
Materials Science and Engineering: B 135 (3), 277-281, 2006
252006
Self-aligned 0.12/spl mu/m T-gate In/sub. 53/Ga/sub. 47/As/In/sub. 52/Al/sub. 48/As HEMT technology utilising a non-annealed ohmic contact strategy
DAJ Moran, K Kalna, E Boyd, F McEwan, H McLelland, LL Zhuang, ...
ESSDERC'03. 33rd Conference on European Solid-State Device Research, 2003 …, 2003
252003
Monte Carlo Simulations of High-Performance Implant Free InGaAs Nano-MOSFETs for Low-Power CMOS Applications
K Kalna, JA Wilson, DAJ Moran, RJW Hill, AR Long, R Droopad, ...
IEEE transactions on nanotechnology 6 (1), 106-112, 2007
242007
Novel technologies for the realisation of GaAs pHEMTs with 120 nm self-aligned and nanoimprinted T-gates
D Moran, E Boyd, H McLelland, KEY Chen, DS Macintyre, S Thoms, ...
Microelectronic Engineering 67, 769-774, 2003
192003
The direct hydrothermal deposition of cobalt-doped MoS 2 onto fluorine-doped SnO 2 substrates for catalysis of the electrochemical hydrogen evolution reaction
I Roger, R Moca, HN Miras, KG Crawford, DAJ Moran, AY Ganin, ...
Journal of Materials Chemistry A 5 (4), 1472-1480, 2017
182017
Nanoimprint lithography process optimization for the fabrication of high electron mobility transistors
DS Macintyre, Y Chen, D Gourlay, E Boyd, D Moran, X Cao, K Elgaid, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
162003
Two methods of realising 10 nm T-gate lithography
S Bentley, X Li, DAJ Moran, IG Thayne
Microelectronic Engineering 86 (4-6), 1067-1070, 2009
132009
Fabrication of 22 nm T-gates for HEMT applications
S Bentley, X Li, DAJ Moran, IG Thayne
Microelectronic Engineering 85 (5-6), 1375-1378, 2008
132008
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Artículos 1–20