| Robust compact model for bipolar oxide-based resistive switching memories M Bocquet, D Deleruyelle, H Aziza, C Muller, JM Portal, T Cabout, ... IEEE transactions on electron devices 61 (3), 674-681, 2014 | 137 | 2014 |
| Synchronous non-volatile logic gate design based on resistive switching memories W Zhao, M Moreau, E Deng, Y Zhang, JM Portal, JO Klein, M Bocquet, ... IEEE Transactions on Circuits and Systems I: Regular Papers 61 (2), 443-454, 2013 | 119 | 2013 |
| Experimental and theoretical study of electrode effects in HfO2 based RRAM C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ... 2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011 | 108 | 2011 |
| Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications T Francois, L Grenouillet, J Coignus, P Blaise, C Carabasse, N Vaxelaire, ... 2019 IEEE International Electron Devices Meeting (IEDM), 15.7. 1-15.7. 4, 2019 | 101 | 2019 |
| Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application A Prakash, D Deleruyelle, J Song, M Bocquet, H Hwang Applied Physics Letters 106 (23), 2015 | 100 | 2015 |
| In-memory and error-immune differential RRAM implementation of binarized deep neural networks M Bocquet, T Hirztlin, JO Klein, E Nowak, E Vianello, JM Portal, ... 2018 IEEE International Electron Devices Meeting (IEDM), 20.6. 1-20.6. 4, 2018 | 88 | 2018 |
| Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories M Bocquet, D Deleruyelle, C Muller, JM Portal Applied Physics Letters 98 (26), 2011 | 77 | 2011 |
| Digital biologically plausible implementation of binarized neural networks with differential hafnium oxide resistive memory arrays T Hirtzlin, M Bocquet, B Penkovsky, JO Klein, E Nowak, E Vianello, ... Frontiers in neuroscience 13, 1383, 2020 | 66 | 2020 |
| RRAM-based FPGA for" Normally off, Instantly on" Applications O Turkyilmaz, S Onkaraiah, M Reyboz, F Clermidy, Hraziia, C Anghel, ... Proceedings of the 2012 IEEE/ACM international symposium on nanoscale …, 2012 | 54 | 2012 |
| Reliability of charge trapping memories with high-k control dielectrics G Molas, M Bocquet, E Vianello, L Perniola, H Grampeix, JP Colonna, ... Microelectronic Engineering 86 (7-9), 1796-1803, 2009 | 50 | 2009 |
| Compact modeling solutions for oxide-based resistive switching memories (OxRAM) M Bocquet, H Aziza, W Zhao, Y Zhang, S Onkaraiah, C Muller, M Reyboz, ... Journal of Low Power Electronics and Applications 4 (1), 1-14, 2014 | 48 | 2014 |
| Outstanding bit error tolerance of resistive ram-based binarized neural networks T Hirtzlin, M Bocquet, JO Klein, E Nowak, E Vianello, JM Portal, ... 2019 IEEE International Conference on Artificial Intelligence Circuits and …, 2019 | 47 | 2019 |
| Bipolar ReRAM based non-volatile flip-flops for low-power architectures S Onkaraiah, M Reyboz, F Clermidy, JM Portal, M Bocquet, C Muller, ... 10th IEEE International NEWCAS Conference, 417-420, 2012 | 47 | 2012 |
| Role of Ti and Pt electrodes on resistance switching variability of HfO2-based resistive random access memory T Cabout, J Buckley, C Cagli, V Jousseaume, JF Nodin, B De Salvo, ... Thin Solid Films 533, 19-23, 2013 | 46 | 2013 |
| Stochastic computing for hardware implementation of binarized neural networks T Hirtzlin, B Penkovsky, M Bocquet, JO Klein, JM Portal, D Querlioz IEEE Access 7, 76394-76403, 2019 | 43 | 2019 |
| High-density 3D monolithically integrated multiple 1T1R multi-level-cell for neural networks E Esmanhotto, L Brunet, N Castellani, D Bonnet, T Dalgaty, L Grenouillet, ... 2020 IEEE International Electron Devices Meeting (IEDM), 36.5. 1-36.5. 4, 2020 | 41 | 2020 |
| Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications G Piccolboni, G Molas, JM Portal, R Coquand, M Bocquet, D Garbin, ... 2015 IEEE International Electron Devices Meeting (IEDM), 17.2. 1-17.2. 4, 2015 | 41 | 2015 |
| An overview of non-volatile flip-flops based on emerging memory technologies JM Portal, M Bocquet, M Moreau, H Aziza, D Deleruyelle, Y Zhang, ... Journal of Electronic Science and Technology 12 (2), 173-181, 2014 | 36 | 2014 |
| Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate D Deleruyelle, M Putero, T Ouled-Khachroum, M Bocquet, MV Coulet, ... Solid-State Electronics 79, 159-165, 2013 | 32 | 2013 |
| Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells WS Zhao, JM Portal, W Kang, M Moreau, Y Zhang, H Aziza, JO Klein, ... Journal of Parallel and Distributed Computing 74 (6), 2484-2496, 2014 | 30 | 2014 |
Portal Jean-MichelFull Professor Aix-Marseille Université - IM2NPCorreu electrònic verificat a univ-amu.fr
