Amador Perez
Amador Perez
ICN2 Barcelona
Correu electrònic verificat a
Citada per
Citada per
A survey of wide bandgap power semiconductor devices
J Millán, P Godignon, X Perpiñà, A Pérez-Tomás, J Rebollo
IEEE transactions on Power Electronics 29 (5), 2155-2163, 2013
Inhibiting the absorber/Mo-back contact decomposition reaction in Cu 2 ZnSnSe 4 solar cells: the role of a ZnO intermediate nanolayer
S López-Marino, M Placidi, A Pérez-Tomás, J Llobet, V Izquierdo-Roca, ...
Journal of Materials Chemistry A 1 (29), 8338-8343, 2013
Field-effect mobility temperature modeling of metal-oxide-semiconductor transistors
A Pérez-Tomás, P Brosselard, P Godignon, J Millán, N Mestres, ...
Journal of applied physics 100 (11), 114508, 2006
Planar edge termination design and technology considerations for 1.7-kV 4H-SiC PiN diodes
R Pérez, D Tournier, A Pérez-Tomás, P Godignon, N Mestres, J Millán
IEEE Transactions on Electron Devices 52 (10), 2309-2316, 2005
P-type β-gallium oxide: A new perspective for power and optoelectronic devices
E Chikoidze, A Fellous, A Perez-Tomas, G Sauthier, T Tchelidze, ...
Materials Today Physics 3, 118-126, 2017
Modelling the inhomogeneous SiC Schottky interface
PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ...
Journal of Applied Physics 114 (22), 223704, 2013
Multiwavelength excitation Raman scattering analysis of bulk and two-dimensional MoS2: vibrational properties of atomically thin MoS2 layers
M Placidi, M Dimitrievska, V Izquierdo-Roca, X Fontané, ...
2D Materials 2 (3), 035006, 2015
A field-effect electron mobility model for SiC MOSFETs including high density of traps at the interface
A Pérez-Tomás, P Godignon, N Mestres, J Millán
Microelectronic engineering 83 (3), 440-445, 2006
Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates
A Pérez-Tomás, A Fontserè, J Llobet, M Placidi, S Rennesson, N Baron, ...
Journal of Applied Physics 113 (17), 174501, 2013
GaN transistor characteristics at elevated temperatures
A Pérez-Tomás, M Placidi, N Baron, S Chenot, Y Cordier, JC Moreno, ...
Journal of Applied Physics 106 (7), 074519, 2009
Performance and stability of mixed FAPbI3 (0.85) MAPbBr3 (0.15) halide perovskite solar cells under outdoor conditions and the effect of low light irradiation
Y Reyna, M Salado, S Kazim, A Pérez-Tomas, S Ahmad, M Lira-Cantu
Nano Energy 30, 570-579, 2016
Characterization and modeling of heterojunction diodes
A Pérez-Tomás, MR Jennings, M Davis, JA Covington, PA Mawby, ...
Journal of applied physics 102 (1), 014505, 2007
Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN
A Fontserè, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ...
Applied Physics Letters 99 (21), 213504, 2011
Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC
MR Jennings, A Pérez-Tomás, M Davies, D Walker, L Zhu, P Losee, ...
Solid-state electronics 51 (5), 797-801, 2007
GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling
A Pérez-Tomás, M Placidi, X Perpiñà, A Constant, P Godignon, X Jordà, ...
Journal of Applied Physics 105 (11), 114510, 2009
Wide band gap semiconductor devices for power electronics
J Millán, P Godignon, A Pérez-Tomás
Automatika: časopis za automatiku, mjerenje, elektroniku, računarstvo i …, 2012
Schottky versus bipolar 3.3 kV SiC diodes
A Pérez-Tomás, P Brosselard, J Hassan, X Jorda, P Godignon, M Placidi, ...
Semiconductor science and technology 23 (12), 125004, 2008
Si∕ SiC heterojunctions fabricated by direct wafer bonding
MR Jennings, A Pérez-Tomás, OJ Guy, R Hammond, SE Burrows, ...
Electrochemical and Solid State Letters 11 (11), H306, 2008
Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN
M Placidi, A Pérez-Tomás, A Constant, G Rius, N Mestres, J Millán, ...
Applied surface science 255 (12), 6057-6060, 2009
Characterization of high-k Ta2Si oxidized films on 4H-SiC and Si substrates as gate insulator
A Perez-Tomas, P Godignon, J Montserrat, J Millan, N Mestres, ...
Journal of the Electrochemical Society 152 (4), G259, 2005
En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.
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