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Amador Perez
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A survey of wide bandgap power semiconductor devices
J Millan, P Godignon, X Perpiñà, A Pérez-Tomás, J Rebollo
IEEE transactions on Power Electronics 29 (5), 2155-2163, 2013
16682013
Inhibiting the absorber/Mo-back contact decomposition reaction in Cu 2 ZnSnSe 4 solar cells: the role of a ZnO intermediate nanolayer
S López-Marino, M Placidi, A Pérez-Tomás, J Llobet, V Izquierdo-Roca, ...
Journal of Materials Chemistry A 1 (29), 8338-8343, 2013
1742013
P-type β-gallium oxide: A new perspective for power and optoelectronic devices
E Chikoidze, A Fellous, A Perez-Tomas, G Sauthier, T Tchelidze, ...
Materials Today Physics 3, 118-126, 2017
1432017
Field-effect mobility temperature modeling of metal-oxide-semiconductor transistors
A Pérez-Tomás, P Brosselard, P Godignon, J Millán, N Mestres, ...
Journal of applied physics 100 (11), 114508, 2006
1222006
Planar edge termination design and technology considerations for 1.7-kV 4H-SiC PiN diodes
R Pérez, D Tournier, A Pérez-Tomás, P Godignon, N Mestres, J Millán
IEEE Transactions on Electron Devices 52 (10), 2309-2316, 2005
982005
Multiwavelength excitation Raman scattering analysis of bulk and two-dimensional MoS2: vibrational properties of atomically thin MoS2 layers
M Placidi, M Dimitrievska, V Izquierdo-Roca, X Fontané, ...
2D Materials 2 (3), 035006, 2015
942015
Performance and stability of mixed FAPbI3 (0.85) MAPbBr3 (0.15) halide perovskite solar cells under outdoor conditions and the effect of low light irradiation
Y Reyna, M Salado, S Kazim, A Perez-Tomas, S Ahmad, M Lira-Cantu
Nano Energy 30, 570-579, 2016
852016
Modelling the inhomogeneous SiC Schottky interface
PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ...
Journal of Applied Physics 114 (22), 223704, 2013
842013
GaN transistor characteristics at elevated temperatures
A Pérez-Tomás, M Placidi, N Baron, S Chenot, Y Cordier, JC Moreno, ...
Journal of Applied Physics 106 (7), 074519, 2009
762009
Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates
A Pérez-Tomás, A Fontserè, J Llobet, M Placidi, S Rennesson, N Baron, ...
Journal of Applied Physics 113 (17), 174501, 2013
702013
A field-effect electron mobility model for SiC MOSFETs including high density of traps at the interface
A Pérez-Tomás, P Godignon, N Mestres, J Millán
Microelectronic engineering 83 (3), 440-445, 2006
662006
Characterization and modeling of heterojunction diodes
A Pérez-Tomás, MR Jennings, M Davis, JA Covington, PA Mawby, ...
Journal of applied physics 102 (1), 014505, 2007
632007
Metal oxides in photovoltaics: all-oxide, ferroic, and perovskite solar cells
A Pérez-Tomás, A Mingorance, D Tanenbaum, M Lira-Cantú
The future of semiconductor oxides in next-generation solar cells, 267-356, 2018
562018
Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating
SAO Russell, A Pérez-Tomás, CF McConville, CA Fisher, DP Hamilton, ...
IEEE Journal of the Electron Devices Society 5 (4), 256-261, 2017
512017
Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN
A Fontserè, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ...
Applied Physics Letters 99 (21), 213504, 2011
512011
Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC
MR Jennings, A Pérez-Tomás, M Davies, D Walker, L Zhu, P Losee, ...
Solid-state electronics 51 (5), 797-801, 2007
492007
GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling
A Pérez-Tomás, M Placidi, X Perpiñà, A Constant, P Godignon, X Jordà, ...
Journal of Applied Physics 105 (11), 114510, 2009
462009
Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga 2 O 3 semiconductor
E Chikoidze, C Sartel, H Mohamed, I Madaci, T Tchelidze, M Modreanu, ...
Journal of Materials Chemistry C 7 (33), 10231-10239, 2019
432019
Wide band gap semiconductor devices for power electronics
J Millán, P Godignon, A Pérez-Tomás
Automatika: časopis za automatiku, mjerenje, elektroniku, računarstvo i …, 2012
412012
Schottky versus bipolar 3.3 kV SiC diodes
A Pérez-Tomás, P Brosselard, J Hassan, X Jorda, P Godignon, M Placidi, ...
Semiconductor Science and Technology 23 (12), 125004, 2008
362008
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