Tuning the Dzyaloshinskii–Moriya interaction in Pt/Co/MgO heterostructures through the MgO thickness A Cao, X Zhang, B Koopmans, S Peng, Y Zhang, Z Wang, S Yan, H Yang, ...
Nanoscale 10 (25), 12062-12067, 2018
95 2018 Skyrmions in magnetic tunnel junctions X Zhang, W Cai, X Zhang, Z Wang, Z Li, Y Zhang, K Cao, N Lei, W Kang, ...
ACS applied materials & interfaces 10 (19), 16887-16892, 2018
87 2018 Failure analysis in magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy W Zhao, X Zhao, B Zhang, K Cao, L Wang, W Kang, Q Shi, M Wang, ...
Materials 9 (1), 41, 2016
80 2016 Magnetic tunnel junctions for spintronics: principles and applications S Peng, Y Zhang, M Wang, YG Zhang, W Zhao
Wiley Encyclopedia of Electrical and Electronics Engineering, 1-16, 2014
63 * 2014 Domain-Wall Motion Driven by Laplace Pressure in Nanodots with Perpendicular Anisotropy Y Zhang, X Zhang, N Vernier, Z Zhang, G Agnus, JR Coudevylle, X Lin, ...
Physical Review Applied 9 (6), 064027, 2018
27 2018 Demonstration of multi-state memory device combining resistive and magnetic switching behaviors Y Zhang, W Cai, W Kang, J Yang, E Deng, YG Zhang, W Zhao, ...
IEEE Electron Device Letters 39 (5), 684-687, 2018
19 2018 Heterogeneous memristive devices enabled by magnetic tunnel junction nanopillars surrounded by resistive silicon switches Y Zhang, X Lin, JP Adam, G Agnus, W Kang, W Cai, JR Coudevylle, ...
Advanced Electronic Materials 4 (3), 1700461, 2018
17 2018 High-speed, low-power, and error-free asynchronous write circuit for STT-MRAM and logic D Zhang, L Zeng, G Wang, Y Zhang, Y Zhang, JO Klein, W Zhao
IEEE Transactions on Magnetics 52 (8), 1-4, 2016
16 2016 A multilevel cell for STT-MRAM realized by capping layer adjustment M Wang, S Peng, Y Zhang, Y Zhang, Y Zhang, Q Zhang, D Ravelosona, ...
IEEE Transactions on Magnetics 51 (11), 1-4, 2015
15 2015 Amplitude and frequency modulation based on memristor-controlled spin nano-oscillators J Wei, B Fang, W Wu, K Cao, HH Chen, Y Zhang, Z Zeng, H Wu, M Bai, ...
Nanotechnology 31 (4), 045202, 2019
7 2019 Tuning the linear field range of tunnel magnetoresistive sensor with MgO capping in perpendicular pinned double-interface CoFeB/MgO structure Z Cao, W Chen, S Lu, S Yan, Y Zhang, Z Zhou, Y Yang, Z Li, W Zhao, ...
Applied Physics Letters 118 (12), 2021
6 2021 Interfacial property tuning of heavy metal/CoFeB for large density STT-MRAM W Cai, K Cao, M Wang, S Peng, J Zhou, A Cao, B Zhang, L Wang, ...
2017 17th Non-Volatile Memory Technology Symposium (NVMTS), 1-4, 2017
2 2017 Design of a new voltage-controlled magnetic memory B Zhang, W Zhao, Y Zhang, Y Zhang
2014 12th IEEE International Conference on Solid-State and Integrated …, 2014
1 2014 A Method of Making Same for Embedded Magnetic Tunnel Junction Device Comprising Dielectric Layer W Zhao, Y Zhang, M Wang
CN Patent ZL201410072401.8, 2017
2017 A Magnetic Memory Device with Multi-level Cell based on Magnetic Field Assistance and Method of Making Same M Wang, Y Zhang, W Guo, W Zhao
CN Patent ZL201410529868.0, 2017
2017 A Spin-orbit Torque Magnetoresistive Random Access Memory (SOT-MRAM) without External Magnetic Field B Zhang, W Guo, Y Zhang, W Zhao
CN Patent ZL2014105317733.8, 2017
2017 An Information Sensing and Storage Device and Method of Making Same Y Zhang, W Zhao, M Wang, W Guo, YG Zhang
CN Patent ZL201410341478.0, 2017
2017 A Magnetic Memory Based on Voltage Control Y Zhang, W Zhao, B Zhang, YG Zhang
CN Patent ZL201410072318.0, 2016
2016 Spin transfer torque memories and logic gates M Wang, Y Zhang, X Zhang, JO Klein, C Chappert, W Zhao
2014 12th IEEE International Conference on Solid-State and Integrated …, 2014
2014