| Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study F Bertazzi, X Zhou, M Goano, G Ghione, E Bellotti Applied Physics Letters 103 (8), 2013 | 60 | 2013 |
| Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues M Calciati, M Goano, F Bertazzi, M Vallone, X Zhou, G Ghione, ... AIP Advances 4 (6), 2014 | 39 | 2014 |
| Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective F Bertazzi, M Goano, X Zhou, M Calciati, G Ghione, M Matsubara, ... Applied Physics Letters 106 (6), 2015 | 33 | 2015 |
| Deriving k· p parameters from full-Brillouin-zone descriptions: A finite-element envelope function model for quantum-confined wurtzite nanostructures X Zhou, F Bertazzi, M Goano, G Ghione, E Bellotti Journal of Applied Physics 116 (3), 2014 | 18 | 2014 |
| Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework M Goano, F Bertazzi, X Zhou, M Mandurrino, S Dominici, M Vallone, ... Physics and Simulation of Optoelectronic Devices XXIV 9742, 974202, 2016 | 15 | 2016 |
| Comment on" Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for … F Bertazzi, M Goano, X Zhou, M Calciati, G Ghione, M Matsubara, ... arXiv preprint arXiv:1305.2512, 2013 | 9 | 2013 |
| Modeling challenges for high-efficiency visible light-emitting diodes F Bertazzi, S Dominici, M Mandurrino, D Robidas, X Zhou, M Vallone, ... 2015 IEEE 1st International Forum on Research and Technologies for Society …, 2015 | 5 | 2015 |
| Rigorous simulation of EUV mask pellicle Y Chen, X Zhou, U Klostermann, L Sun, O Wood II, M Braylovska, ... Photomask Technology 2017 10451, 190-199, 2017 | 3 | 2017 |
| Auger transitions and their signatures in III-nitride LEDs: a full-band modeling F Bertazzi, X Zhou, M Goano, G Ghione, E Bellotti Numerical Simulation of Optoelectronic Devices, 2014, 9-10, 2014 | 2 | 2014 |
| Full-band electronic structure calculation of semiconductor nanostructures: a reduced-order approach F Bertazzi, X Zhou, M Goano, E Bellotti, G Ghione arXiv preprint arXiv:1304.1019, 2013 | 2 | 2013 |
| Lithography simulation using machine learning X Zhou, M Bohn, M Braylovska US Patent App. 17/467,682, 2022 | 1 | 2022 |
| Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments F Bertazzi, M Goano, M Calciati, X Zhou, G Ghione, E Bellotti Light-Emitting Diodes: Materials, Devices, and Applications for Solid State …, 2014 | 1 | 2014 |
| Physics-based multiscale modeling of III-nitride light emitters X Zhou Politecnico di Torino, 2016 | | 2016 |
| A spurious-solution-free envelope function model for quantum-confined wurtzite nanostructures X Zhou, F Bertazzi, M Goano, G Ghione Numerical Simulation of Optoelectronic Devices, 2014, 27-28, 2014 | | 2014 |
| Invited Talks F Bertazzi, X Zhou, M Goano, G Ghione, E Bellotti, MA Swillam, S Sujecki, ... | | |
Giovanni GhioneProfessore ordinario di elettronica, Politecnico di TorinoDirección de correo verificada de polito.it
