Mario Lanza
Cited by
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High-performance silicon photoanodes passivated with ultrathin nickel films for water oxidation
MJ Kenney, M Gong, Y Li, JZ Wu, J Feng, M Lanza, H Dai
Science 342 (6160), 836-840, 2013
Electronic synapses made of layered two-dimensional materials
Y Shi, X Liang, B Yuan, V Chen, H Li, F Hui, Z Yu, F Yuan, E Pop, ...
Nature Electronics 1 (8), 458-465, 2018
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
A review on resistive switching in high-k dielectrics: A nanoscale point of view using conductive atomic force microscope
M Lanza
Materials 7 (3), 2155-2182, 2014
Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures
M Lanza, K Zhang, M Porti, M Nafría, ZY Shen, LF Liu, JF Kang, D Gilmer, ...
Applied Physics Letters 100 (12), 123508, 2012
Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries
M Lanza, G Bersuker, M Porti, E Miranda, M Nafría, X Aymerich
Applied Physics Letters 101 (19), 193502, 2012
Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride
C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ...
Advanced functional materials 27 (10), 1604811, 2017
Graphene and related materials for resistive random access memories
F Hui, E Grustan‐Gutierrez, S Long, Q Liu, AK Ott, AC Ferrari, M Lanza
Advanced Electronic Materials 3 (8), 1600195, 2017
Grain boundary mediated leakage current in polycrystalline HfO2 films
K McKenna, A Shluger, V Iglesias, M Porti, M Nafría, M Lanza, G Bersuker
Microelectronic Engineering 88 (7), 1272-1275, 2011
Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown
Y Ji, C Pan, M Zhang, S Long, X Lian, F Miao, F Hui, Y Shi, L Larcher, ...
Applied Physics Letters 108 (1), 012905, 2016
Conductive Atomic Force Microscopy: Applications in Nanomaterials
M Lanza
John Wiley & Sons, 2017
On the use of two dimensional hexagonal boron nitride as dielectric
F Hui, C Pan, Y Shi, Y Ji, E Grustan-Gutierrez, M Lanza
Microelectronic Engineering 163, 119-133, 2016
Nanoscale characterization of PM 2.5 airborne pollutants reveals high adhesiveness and aggregation capability of soot particles
Y Shi, Y Ji, H Sun, F Hui, J Hu, Y Wu, J Fang, H Lin, J Wang, H Duan, ...
Scientific reports 5 (1), 1-10, 2015
A review on the use of graphene as a protective coating against corrosion
J Hu, Y Ji, Y Shi, F Hui, H Duan, M Lanza
Ann. J. Mater. Sci. Eng 1, 16, 2014
Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries
O Pirrotta, L Larcher, M Lanza, A Padovani, M Porti, M Nafría, G Bersuker
Journal of Applied Physics 114 (13), 134503, 2013
Tuning graphene morphology by substrate towards wrinkle-free devices: Experiment and simulation
M Lanza, Y Wang, A Bayerl, T Gao, M Porti, M Nafria, H Liang, G Jing, ...
Journal of Applied Physics 113 (10), 104301, 2013
Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching
N Xiao, MA Villena, B Yuan, S Chen, B Wang, M Eliáš, Y Shi, F Hui, X Jing, ...
Advanced Functional Materials 27 (33), 1700384, 2017
Graphene‐Coated atomic force microscope tips for reliable nanoscale electrical characterization
M Lanza, A Bayerl, T Gao, M Porti, M Nafria, GY Jing, YF Zhang, ZF Liu, ...
Advanced Materials 25 (10), 1440-1444, 2013
Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN
A Fontserè, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ...
Applied Physics Letters 99 (21), 213504, 2011
Electrical resolution during Conductive AFM measurements under different environmental conditions and contact forces
M Lanza, M Porti, M Nafría, X Aymerich, E Wittaker, B Hamilton
Review of scientific instruments, 2010
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