Jesús Banqueri
Jesús Banqueri
Dirección de correo verificada de ugr.es
TítuloCitado porAño
Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures
F Jiménez-Molinos, A Palma, F Gámiz, J Banqueri, JA Lopez-Villanueva
Journal of Applied Physics 90 (7), 3396-3404, 2001
1032001
Effects of the inversion-layer centroid on the performance of double-gate MOSFETs
JA López-Villanueva, P Cartujo-Cassinello, F Gámiz, J Banqueri, ...
IEEE Transactions on Electron Devices 47 (1), 141-146, 2000
922000
Effects of the inversion layer centroid on MOSFET behavior
JA López-Villanueva, P Cartujo-Casinello, J Banqueri, F Gamiz, ...
IEEE Transactions on Electron Devices 44 (11), 1915-1922, 1997
851997
Universality of electron mobility curves in MOSFETs: A Monte Carlo study
F Gamiz, JA López-Villanueva, J Banqueri, JE Carceller, P Cartujo
IEEE Transactions on Electron Devices 42 (2), 258-265, 1995
711995
Flexible ECG acquisition system based on analog and digital reconfigurable devices
DP Morales, A Garcia, E Castillo, MA Carvajal, J Banqueri, AJ Palma
Sensors and Actuators A: Physical 165 (2), 261-270, 2011
472011
A model for the quantized accumulation layer in metal-insulator-semiconductor structures
JA López-Villanueva, I Melchor, F Gámiz, J Banqueri, JA Jiménez-Tejada
Solid-state electronics 38 (1), 203-210, 1995
471995
A novel electrode structure compared with interdigitated electrodes as capacitive sensor
A Rivadeneyra, J Fernández-Salmerón, J Banqueri, JA Lopez-Villanueva, ...
Sensors and Actuators B: Chemical 204, 552-560, 2014
392014
Phosphorescent sensing of carbon dioxide based on secondary inner-filter quenching
IMP de Vargas-Sansalvador, MA Carvajal, OM Roldan-Munoz, J Banqueri, ...
Analytica chimica acta 655 (1-2), 66-74, 2009
332009
Readout techniques for linearity and resolution improvements in MOSFET dosimeters
MA Carvajal, M Vilches, D Guirado, AM Lallena, J Banqueri, AJ Palma
Sensors and Actuators A: Physical 157 (2), 178-184, 2010
292010
Printed single-chip UHF passive radio frequency identification tags with sensing capability
JF Salmerón, A Rivadeneyra, M Agudo-Acemel, LF Capitán-Vallvey, ...
Sensors and Actuators A: Physical 220, 281-289, 2014
252014
Influence of the oxide-charge distribution profile on electron mobility in MOSFET's
F Gámiz, JA López-Villanueva, J Banqueri, JE Carceller
IEEE Transactions on Electron Devices 42 (5), 999-1004, 1995
221995
General purpose MOSFETs for the dosimetry of electron beams used in intra-operative radiotherapy
MS Martinez-Garcia, F Simancas, AJ Palma, AM Lallena, J Banqueri, ...
Sensors and Actuators A: Physical 210, 175-181, 2014
212014
Tunable MEMS piezoelectric energy harvesting device
A Rivadeneyra, JM Soto-Rueda, R O’Keeffe, J Banqueri, N Jackson, ...
Microsystem Technologies 22 (4), 823-830, 2016
202016
Influence of mobility fluctuations on random telegraph signal amplitude in -channel metal–oxide–semiconductor field-effect transistors
A Godoy, F Gámiz, A Palma, JA Jiménez-Tejada, J Banqueri, ...
Journal of applied physics 82 (9), 4621-4628, 1997
201997
Oxide charge space correlation in inversion layers. II. Three-dimensional oxide charge distribution
F Gámiz, JA López-Villanueva, J Banqueri, Y Ghailan, JE Carceller
Semiconductor science and technology 10 (5), 592, 1995
151995
A reconstruction method for electrical capacitance tomography based on image fusion techniques
AM Olmos, G Botella, E Castillo, DP Morales, J Banqueri, A García
Digital Signal Processing 22 (6), 885-893, 2012
142012
A procedure for the determination of the effective mobility in an N-MOSFET in the moderate inversion region
J Banqueri, JA Lopez-Villanueva, F Gamiz, JE Carceller, E Lora-Tamayo, ...
Solid-State Electronics 39 (6), 875-883, 1996
141996
An analytical expression for phonon‐limited electron mobility in silicon‐inversion layers
F Gámiz, J Banqueri, I Melchor, JE Carceller, P Cartujo, ...
Journal of applied physics 74 (5), 3289-3292, 1993
141993
Design and characterization of ink-jet and screen printed HF RFID antennas
JF Salmerón, AR Torres, J Banqueri, MA Carvajal, M Agudo
2012 Fourth International EURASIP Workshop on RFID Technology, 119-123, 2012
132012
Accurate determination of majority thermal-capture cross sections of deep impurities in p-n junctions
A Palma, JA Jimenez-Tejada, J Banqueri, P Cartujo, JE Carceller
Journal of applied physics 74 (4), 2605-2612, 1993
131993
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Artículos 1–20