Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures F Jiménez-Molinos, A Palma, F Gamiz, J Banqueri, JA Lopez-Villanueva
Journal of Applied Physics 90 (7), 3396-3404, 2001
114 2001 Effects of the inversion-layer centroid on the performance of double-gate MOSFETs JA López-Villanueva, P Cartujo-Cassinello, F Gámiz, J Banqueri, ...
IEEE Transactions on Electron Devices 47 (1), 141-146, 2000
97 2000 Effects of the inversion layer centroid on MOSFET behavior JA Lopez-Villanueva, P Cartujo-Casinello, J Banqueri, F Gamiz, ...
IEEE Transactions on Electron Devices 44 (11), 1915-1922, 1997
87 1997 Universality of electron mobility curves in MOSFETs: A Monte Carlo study F Gamiz, JA Lopez-Villanueva, J Banqueri, JE Carceller, P Cartujo
IEEE transactions on electron devices 42 (2), 258-265, 1995
73 1995 Flexible ECG acquisition system based on analog and digital reconfigurable devices DP Morales, A Garcia, E Castillo, MA Carvajal, J Banqueri, AJ Palma
Sensors and Actuators A: Physical 165 (2), 261-270, 2011
53 2011 A novel electrode structure compared with interdigitated electrodes as capacitive sensor A Rivadeneyra, J Fernández-Salmerón, J Banqueri, JA López-Villanueva, ...
Sensors and Actuators B: Chemical 204, 552-560, 2014
50 2014 A model for the quantized accumulation layer in metal-insulator-semiconductor structures JA López-Villanueva, I Melchor, F Gámiz, J Banqueri, JA Jiménez-Tejada
Solid-state electronics 38 (1), 203-210, 1995
48 1995 Phosphorescent sensing of carbon dioxide based on secondary inner-filter quenching IMP de Vargas-Sansalvador, MA Carvajal, OM Roldan-Munoz, J Banqueri, ...
Analytica chimica acta 655 (1-2), 66-74, 2009
34 2009 Readout techniques for linearity and resolution improvements in MOSFET dosimeters MA Carvajal, M Vilches, D Guirado, AM Lallena, J Banqueri, AJ Palma
Sensors and Actuators A: Physical 157 (2), 178-184, 2010
32 2010 Printed single-chip UHF passive radio frequency identification tags with sensing capability JF Salmerón, A Rivadeneyra, M Agudo-Acemel, LF Capitán-Vallvey, ...
Sensors and Actuators A: Physical 220, 281-289, 2014
28 2014 General purpose MOSFETs for the dosimetry of electron beams used in intra-operative radiotherapy MS Martinez-Garcia, F Simancas, AJ Palma, AM Lallena, J Banqueri, ...
Sensors and Actuators A: Physical 210, 175-181, 2014
25 2014 Tunable MEMS piezoelectric energy harvesting device A Rivadeneyra, JM Soto-Rueda, R O’Keeffe, J Banqueri, N Jackson, ...
Microsystem Technologies 22 (4), 823-830, 2016
23 2016 Influence of the oxide-charge distribution profile on electron mobility in MOSFET's F Gámiz, JA López-Villanueva, J Banqueri, JE Carceller
IEEE transactions on electron devices 42 (5), 999-1004, 1995
21 1995 Influence of mobility fluctuations on random telegraph signal amplitude in A Godoy, F Gámiz, A Palma, JA Jiménez-Tejada, J Banqueri, ...
Journal of applied physics 82 (9), 4621-4628, 1997
20 1997 A reconstruction method for electrical capacitance tomography based on image fusion techniques AM Olmos, G Botella, E Castillo, DP Morales, J Banqueri, A García
Digital Signal Processing 22 (6), 885-893, 2012
16 2012 Oxide charge space correlation in inversion layers. II. Three-dimensional oxide charge distribution F Gámiz, JA López-Villanueva, J Banqueri, Y Ghailan, JE Carceller
Semiconductor science and technology 10 (5), 592, 1995
16 1995 Response to ionizing radiation of different biased and stacked pMOS structures MS Martínez-García, JT del Río, A Jaksic, J Banqueri, MA Carvajal
Sensors and Actuators A: Physical 252, 67-75, 2016
15 2016 Design and characterization of ink-jet and screen printed HF RFID antennas JF Salmerón, AR Torres, J Banqueri, MA Carvajal, M Agudo
2012 Fourth International EURASIP Workshop on RFID Technology, 119-123, 2012
14 2012 A procedure for the determination of the effective mobility in an N-MOSFET in the moderate inversion region J Banqueri, JA Lopez-Villanueva, F Gamiz, JE Carceller, E Lora-Tamayo, ...
Solid-State Electronics 39 (6), 875-883, 1996
13 1996 An analytical expression for phonon‐limited electron mobility in silicon‐inversion layers F Gámiz, J Banqueri, I Melchor, JE Carceller, P Cartujo, ...
Journal of applied physics 74 (5), 3289-3292, 1993
13 1993 