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Michael Randle
Michael Randle
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Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors
M Randle, A Lipatov, A Kumar, CP Kwan, J Nathawat, B Barut, S Yin, ...
ACS nano 13 (1), 803-811, 2018
622018
Space-charge limited conduction in epitaxial chromia films grown on elemental and oxide-based metallic substrates
CP Kwan, M Street, A Mahmood, W Echtenkamp, M Randle, K He, ...
AIP Advances 9 (5), 2019
452019
Collective states and charge density waves in the group IV transition metal trichalcogenides
MD Randle, A Lipatov, I Mansaray, JE Han, A Sinitskii, JP Bird
Applied Physics Letters 118 (21), 2021
272021
Transient hot-carrier dynamics and intrinsic velocity saturation in monolayer
J Nathawat, KKH Smithe, CD English, S Yin, R Dixit, M Randle, ...
Physical review materials 4 (1), 014002, 2020
242020
Transient response of h-BN-encapsulated graphene transistors: signatures of self-heating and hot-carrier trapping
J Nathawat, M Zhao, CP Kwan, S Yin, N Arabchigavkani, M Randle, ...
ACS omega 4 (2), 4082-4090, 2019
162019
Epitaxial growth of cobalt oxide phases on Ru (0001) for spintronic device applications
O Olanipekun, C Ladewig, JA Kelber, MD Randle, J Nathawat, CP Kwan, ...
Semiconductor Science and Technology 32 (9), 095011, 2017
162017
Josephson junctions of Weyl semimetal WTe2 induced by spontaneous nucleation of PdTe superconductor
M Ohtomo, RS Deacon, M Hosoda, N Fushimi, H Hosoi, MD Randle, ...
Applied Physics Express 15 (7), 075003, 2022
92022
High-electric-field behavior of the metal-insulator transition in TiS3 nanowire transistors
MD Randle, A Lipatov, A Datta, A Kumar, I Mansaray, A Sinitskii, ...
Applied Physics Letters 120 (7), 2022
92022
Asymmetrically engineered nanoscale transistors for on-demand sourcing of terahertz plasmons
B Barut, X Cantos-Roman, J Crabb, CP Kwan, R Dixit, N Arabchigavkani, ...
Nano Letters 22 (7), 2674-2681, 2022
72022
Nonvolatile Memory Action Due to Hot-Carrier Charge Injection in Graphene-on-Parylene Transistors
S Yin, JG Gluschke, AP Micolich, J Nathawat, B Barut, R Dixit, ...
ACS Applied Electronic Materials 1 (11), 2260-2267, 2019
72019
Graphene on Chromia: A System for Beyond‐Room‐Temperature Spintronics
K He, B Barut, S Yin, MD Randle, R Dixit, N Arabchigavkani, J Nathawat, ...
Advanced Materials 34 (12), 2105023, 2022
62022
Probing the Dynamics of Electric Double Layer Formation over Wide Time Scales (10–9–10+5 s) in the Ionic Liquid DEME-TFSI
S Yin, K He, MD Randle, B Barut, R Dixit, A Lipatov, A Sinitskii, JP Bird
The Journal of Physical Chemistry C 126 (4), 1958-1965, 2022
62022
Pulsed studies of intervalley transfer in : A paradigm for valley photovoltaics
R Dixit, B Barut, S Yin, J Nathawat, M Randle, N Arabchigavkani, K He, ...
Physical Review Materials 4 (8), 085404, 2020
52020
Building the quasi one dimensional transistor from 2D materials
PV Galiy, M Randle, A Lipatov, L Wang, S Gilbert, N Vorobeva, A Kumar, ...
2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering …, 2019
52019
Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene
J Nathawat, I Mansaray, K Sakanashi, N Wada, MD Randle, S Yin, K He, ...
Nature Communications 14 (1), 1507, 2023
42023
Gate‐Defined Josephson Weak‐Links in Monolayer WTe2
MD Randle, M Hosoda, RS Deacon, M Ohtomo, P Zellekens, K Watanabe, ...
Advanced Materials 35 (35), 2301683, 2023
32023
Correlated insulator collapse due to quantum avalanche via in-gap ladder states
JE Han, C Aron, X Chen, I Mansaray, JH Han, KS Kim, M Randle, JP Bird
Nature Communications 14 (1), 2936, 2023
32023
Reply to “Comment on ‘Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors’”
M Randle, A Lipatov, A Kumar, PA Dowben, A Sinitskii, U Singisetti, ...
ACS nano 13 (8), 8498-8500, 2019
32019
Remote Mesoscopic Signatures of Induced Magnetic Texture in Graphene
N Arabchigavkani, R Somphonsane, H Ramamoorthy, G He, J Nathawat, ...
Physical Review Letters 126 (8), 086802, 2021
22021
Graphene on Chromia: A System for Beyond‐Room‐Temperature Spintronics (Adv. Mater. 12/2022)
K He, B Barut, S Yin, MD Randle, R Dixit, N Arabchigavkani, J Nathawat, ...
Advanced Materials 34 (12), 2270097, 2022
12022
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