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Dan Beaton, Daniel Beaton, Daniel A Beaton, DA Beaton
Dan Beaton, Daniel Beaton, Daniel A Beaton, DA Beaton
University of British Columbia, National Renewable Energy Lab, St. Francis Xavier
Correu electrònic verificat a nrel.gov
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Composition dependence of photoluminescence of GaAs1− xBix alloys
X Lu, DA Beaton, RB Lewis, T Tiedje, Y Zhang
Applied Physics Letters 95 (4), 2009
2182009
Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1− xBix
X Lu, DA Beaton, RB Lewis, T Tiedje, MB Whitwick
Applied Physics Letters 92 (19), 2008
2092008
Clustering effects in Ga (AsBi)
S Imhof, A Thränhardt, A Chernikov, M Koch, NS Köster, K Kolata, ...
Applied Physics Letters 96 (13), 2010
1482010
Kinetically limited growth of GaAsBi by molecular-beam epitaxy
AJ Ptak, R France, DA Beaton, K Alberi, J Simon, A Mascarenhas, ...
Journal of Crystal Growth 338 (1), 107-110, 2012
1322012
GaAs1-xBix light emitting diodes
RB Lewis, DA Beaton, X Lu, T Tiedje
Journal of Crystal Growth 311 (7), 1872-1875, 2009
1032009
Recombination mechanisms and band alignment of GaAs1− xBix/GaAs light emitting diodes
N Hossain, IP Marko, SR Jin, K Hild, SJ Sweeney, RB Lewis, DA Beaton, ...
Applied Physics Letters 100 (5), 2012
752012
Temperature dependence of hole mobility in GaAs1− xBix alloys
DA Beaton, RB Lewis, M Masnadi-Shirazi, T Tiedje
journal of applied physics 108 (8), 2010
662010
Surface reconstructions during growth of GaAs1− xBix alloys by molecular beam epitaxy
M Masnadi-Shirazi, DA Beaton, RB Lewis, X Lu, T Tiedje
Journal of crystal growth 338 (1), 80-84, 2012
612012
Deep level defects in n-type GaAsBi and GaAs grown at low temperatures
PM Mooney, KP Watkins, Z Jiang, AF Basile, RB Lewis, V Bahrami-Yekta, ...
Journal of Applied Physics 113 (13), 2013
512013
Bismuth incorporation in GaAs1–xBix grown by molecular beam epitaxy with in‐situ light scattering
EC Young, MB Whitwick, T Tiedje, DA Beaton
physica status solidi c 4 (5), 1707-1710, 2007
402007
Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells
MK Shakfa, D Kalincev, X Lu, SR Johnson, DA Beaton, T Tiedje, ...
Journal of Applied Physics 114 (16), 2013
392013
Amber-green light-emitting diodes using order-disorder AlxIn1− xP heterostructures
TM Christian, DA Beaton, K Mukherjee, K Alberi, EA Fitzgerald, ...
Journal of Applied Physics 114 (7), 2013
382013
Luminescence dynamics in ga (asbi)
S Imhof, C Wagner, A Thränhardt, A Chernikov, M Koch, NS Köster, ...
Applied Physics Letters 98 (16), 2011
342011
Growth of BGaAs by molecular-beam epitaxy and the effects of a bismuth surfactant
AJ Ptak, DA Beaton, A Mascarenhas
Journal of crystal growth 351 (1), 122-125, 2012
312012
Shubnikov-de Haas measurement of electron effective mass in GaAs1− xBix
B Fluegel, RN Kini, AJ Ptak, D Beaton, K Alberi, A Mascarenhas
Applied Physics Letters 99 (16), 2011
302011
Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors
B Fluegel, AV Mialitsin, DA Beaton, JL Reno, A Mascarenhas
Nature Communications 6 (1), 7136, 2015
272015
Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors
B Fluegel, AV Mialitsin, DA Beaton, JL Reno, A Mascarenhas
Nature Communications 6 (1), 7136, 2015
272015
Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates
K Mukherjee, DA Beaton, T Christian, EJ Jones, K Alberi, A Mascarenhas, ...
Journal of applied physics 113 (18), 2013
272013
Insight into the epitaxial growth of high optical quality GaAs1–xBix
DA Beaton, A Mascarenhas, K Alberi
Journal of Applied Physics 118 (23), 2015
232015
Evidence of two disorder scales in Ga (AsBi)
S Imhof, C Wagner, A Chernikov, M Koch, K Kolata, NS Köster, ...
physica status solidi (b) 248 (4), 851-854, 2011
222011
En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.
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