Daniel Nagy
Daniel Nagy
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TítuloCitado porAño
Quantum corrections based on the 2-D Schrödinger equation for 3-D finite element Monte Carlo simulations of nanoscaled FinFETs
J Lindberg, M Aldegunde, D Nagy, WG Dettmer, K Kalna, ...
IEEE Transactions on Electron Devices 61 (2), 423-429, 2014
362014
Comparison of fin-edge roughness and metal grain work function variability in InGaAs and Si FinFETs
N Seoane, G Indalecio, M Aldegunde, D Nagy, MA Elmessary, ...
IEEE Transactions on Electron Devices 63 (3), 1209-1216, 2016
262016
Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations
MA Elmessary, D Nagy, M Aldegunde, N Seoane, G Indalecio, J Lindberg, ...
Solid-State Electronics 128, 17-24, 2016
162016
3-D finite element Monte Carlo simulations of scaled Si SOI FinFET with different cross sections
D Nagy, MA Elmessary, M Aldegunde, R Valin, A Martinez, J Lindberg, ...
IEEE Transactions on Nanotechnology 14 (1), 93-100, 2014
162014
FinFET versus gate-all-around nanowire FET: performance, scaling, and variability
D Nagy, G Indalecio, AJ García-Loureiro, MA Elmessary, K Kalna, ...
IEEE Journal of the Electron Devices Society 6, 332-340, 2018
132018
Anisotropic quantum corrections for 3-D finite-element Monte Carlo simulations of nanoscale multigate transistors
MA Elmessary, D Nagy, M Aldegunde, J Lindberg, WG Dettmer, D Períc, ...
IEEE Transactions on Electron Devices 63 (3), 933-939, 2016
132016
Impact of cross-sectional shape on 10-nm gate length InGaAs FinFET performance and variability
N Seoane, G Indalecio, D Nagy, K Kalna, AJ García-Loureiro
IEEE Transactions on Electron Devices 65 (2), 456-462, 2018
72018
Metal grain granularity study on a gate-all-around nanowire FET
D Nagy, G Indalecio, AJ García-Loureiro, MA Elmessary, K Kalna, ...
IEEE Transactions on Electron Devices 64 (12), 5263-5269, 2017
62017
Simulation study of scaled In0. 53Ga0. 47As and Si FinFETs for sub-16 nm technology nodes
N Seoane, M Aldegunde, D Nagy, MA Elmessary, G Indalecio, ...
Semiconductor Science and Technology 31 (7), 075005, 2016
62016
Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations
MA Elmessary, D Nagy, M Aldegunde, AJ García-Loureiro, K Kalna
2017 47th European Solid-State Device Research Conference (ESSDERC), 184-187, 2017
12017
3D MC simulations of strain, channel orientation, and quantum confinement effects in nanoscale Si SOI FinFETs
MA Elmessary, D Nagy, M Aldegunde, AJ Garcia-Loureiro, K Kalna
2016 International Conference on Simulation of Semiconductor Processes and …, 2016
12016
Multi-subband interface roughness scattering using 3D Finite Element Monte Carlo with 2D Schödinger equation for simulations of sub-16nm FinFETs
D Nagy, MA Elmessary, M Aldegunde, J Lindberg, AJ García-Loureiro, ...
2015 International Conference on Simulation of Semiconductor Processes and …, 2015
12015
Multi-subband interface roughness scattering using 2D finite element schodinger equation for monte carlo simulations of multi-gate transistors
D Nagy, MA Elmessary, M Aldegunde, J Lindberg, AJ Garcia-Loureiro, ...
2015 International Workshop on Computational Electronics (IWCE), 1-4, 2015
12015
The effect of interface roughness scattering on Si SOI FinFET with Ando's and extended Prange and Nee model
D Nagy, MA Elmessary, M Aldegunde, K Kalna
Journal of Physics: Conference Series 647 (1), 012065, 2015
12015
3D Monte Carlo study of scaled SOI FinFETs using 2D Schrödinger quantum corrections
MA Elmessary, D Nagy, M Aldegunde, J Lindberg, WG Dettmer, D Periĉ, ...
2014 15th International Conference on Ultimate Integration on Silicon (ULIS …, 2014
12014
Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs
D Nagy, G Indalecio, AJ García-Loureiro, G Espiñeira, MA Elmessary, ...
IEEE Access 7, 12790-12797, 2019
2019
FoMPy: A figure of merit extraction tool for semiconductor device simulations
G Espiñeira, N Seoane, D Nagy, G Indalecio, AJ García-Loureiro
2018 Joint International EUROSOI Workshop and International Conference on …, 2018
2018
Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness
D Nagy, M Aldegunde, MA Elmessary, AJ García-Loureiro, N Seoane, ...
Journal of Physics: Condensed Matter 30 (14), 144006, 2018
2018
Study of the Interface Roughness Models using 3D Finite Element Schrödinger Equation Corrected Monte Carlo Simulator on Nanoscaled FinFET
D Nagy, MA Elmessary, M Aldegunde, J Lindberg, A Loureiro, K Kalna
2016
Anisotropic schrodinger equation quantum corrections for 3D Monte Carlo simulations of nanoscale multigate transistors
MA Elmessary, D Nagy, M Aldegunde, J Lindberg, W Dettmer, D Peric, ...
2015 International Workshop on Computational Electronics (IWCE), 1-4, 2015
2015
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