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Alon Vardi
Alon Vardi
MIT - Cambridge
Dirección de correo verificada de mit.edu
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Near infrared quantum cascade detector in GaN∕ AlGaN∕ AlN heterostructures
A Vardi, G Bahir, F Guillot, C Bougerol, E Monroy, SE Schacham, ...
Applied Physics Letters 92 (1), 2008
1662008
GaN/AlGaN intersubband optoelectronic devices
H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, ...
New Journal of Physics 11 (12), 125023, 2009
1192009
Room temperature demonstration of GaN∕ AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength
A Vardi, N Akopian, G Bahir, L Doyennette, M Tchernycheva, L Nevou, ...
Applied physics letters 88 (14), 2006
972006
Nanometer-Scale III-V MOSFETs
JA Del Alamo, DA Antoniadis, J Lin, W Lu, A Vardi, X Zhao
IEEE Journal of the Electron Devices Society 4 (5), 205-214, 2016
872016
High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈ 1.55 μm
A Vardi, N Kheirodin, L Nevou, H Machhadani, L Vivien, P Crozat, ...
Applied Physics Letters 93 (19), 2008
732008
InGaAs MOSFETs for CMOS: Recent advances in process technology
JA Del Alamo, D Antoniadis, A Guo, DH Kim, TW Kim, J Lin, W Lu, A Vardi, ...
2013 IEEE International Electron Devices Meeting, 2.1. 1-2.1. 4, 2013
612013
Sub-thermal subthreshold characteristics in top–down InGaAs/InAs heterojunction vertical nanowire tunnel FETs
X Zhao, A Vardi, JA del Alamo
IEEE Electron Device Letters 38 (7), 855-858, 2017
602017
A test structure to characterize nano-scale ohmic contacts in III-V MOSFETs
W Lu, A Guo, A Vardi, JA del Alamo
IEEE electron device letters 35 (2), 178-180, 2014
582014
Sub-10-nm fin-width self-aligned InGaAs FinFETs
A Vardi, JA del Alamo
IEEE Electron Device Letters 37 (9), 1104-1107, 2016
532016
Non-polar m-plane intersubband based InGaN/(Al) GaN quantum well infrared photodetectors
A Pesach, E Gross, CY Huang, YD Lin, A Vardi, SE Schacham, ...
Applied physics letters 103 (2), 2013
532013
Enhanced transport in transistor by tuning transition-metal oxide electronic states interfaced with diamond
Z Yin, M Tordjman, Y Lee, A Vardi, R Kalish, JA Del Alamo
Science advances 4 (9), eaau0480, 2018
512018
Sub-10-nm-diameter InGaAs vertical nanowire MOSFETs: Ni versus Mo contacts
X Zhao, C Heidelberger, EA Fitzgerald, W Lu, A Vardi, JA del Alamo
IEEE Transactions on Electron Devices 65 (9), 3762-3768, 2018
452018
InGaAs/InAs heterojunction vertical nanowire tunnel FETs fabricated by a top-down approach
X Zhao, A Vardi, JA del Alamo
2014 IEEE International Electron Devices Meeting, 25.5. 1-25.5. 4, 2014
422014
A Diamond:H/MoO3 MOSFET
A Vardi, M Tordjman, JA del Alamo, R Kalish
IEEE Electron Device Letters 35 (12), 1320-1322, 2014
412014
First transistor demonstration of thermal atomic layer etching: InGaAs FinFETs with sub-5 nm fin-width featuring in situ ALE-ALD
W Lu, Y Lee, J Murdzek, J Gertsch, A Vardi, L Kong, SM George, ...
2018 IEEE International Electron Devices Meeting (IEDM), 39.1. 1-39.1. 4, 2018
372018
A Diamond:H/WO3Metal–Oxide–Semiconductor Field-Effect Transistor
Z Yin, M Tordjman, A Vardi, R Kalish, JA del Alamo
IEEE Electron Device Letters 39 (4), 540-543, 2018
372018
Femto-second electron transit time characterization in GaN/AlGaN quantum cascade detector at 1.5 micron
A Vardi, S Sakr, J Mangeney, PK Kandaswamy, E Monroy, ...
Applied Physics Letters 99 (20), 2011
372011
Quantum-size effects in sub 10-nm fin width InGaAs FinFETs
A Vardi, X Zhao, JA del Alamo
2015 IEEE International Electron Devices Meeting (IEDM), 31.3. 1-31.3. 4, 2015
322015
Iii-v mosfets for future cmos
JA Del Alamo, DA Antoniadis, J Lin, W Lu, A Vardi, X Zhao
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2015
312015
Interlevel transitions and two-photon processes in Ge/Si quantum dot photocurrent
E Finkman, N Shuall, A Vardi, V Le Thanh, SE Schacham
Journal of Applied Physics 103 (9), 2008
312008
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