Young Duck Kim
Young Duck Kim
Associate Professor, Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea
Verified email at - Homepage
Cited by
Cited by
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
X Cui, GH Lee, YD Kim, G Arefe, PY Huang, CH Lee, DA Chenet, X Zhang, ...
Nature nanotechnology 10 (6), 534-540, 2015
Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe2
TFH Yilei Li, Jonathan Ludwig, Tony Low, Alexey Chernikov, Xu Cui, Ghidewon ...
Physical Review Letters 113, 266804, 2014
Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
GH Lee, X Cui, YD Kim, G Arefe, X Zhang, CH Lee, F Ye, K Watanabe, ...
ACS nano 9 (7), 7019-7026, 2015
Bright visible light emission from graphene
YD Kim, H Kim, Y Cho, JH Ryoo, CH Park, P Kim, YS Kim, S Lee, Y Li, ...
Nature nanotechnology 10 (8), 676-681, 2015
Bandgap engineering of two-dimensional semiconductor materials
A Chaves, JG Azadani, H Alsalman, DR Da Costa, R Frisenda, AJ Chaves, ...
npj 2D Materials and Applications 4 (1), 1-21, 2020
Nature of the quantum metal in a two-dimensional crystalline superconductor
AW Tsen, B Hunt, YD Kim, ZJ Yuan, S Jia, RJ Cava, J Hone, P Kim, ...
Nature Physics 12 (3), 208-212, 2016
Structure and control of charge density waves in two-dimensional 1T-TaS2
AW Tsen, R Hovden, D Wang, YD Kim, J Okamoto, KA Spoth, Y Liu, W Lu, ...
Proceedings of the National Academy of Sciences 112 (49), 15054-15059, 2015
Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes
X Cui, EM Shih, LA Jauregui, SH Chae, YD Kim, B Li, D Seo, K Pistunova, ...
Nano letters 17 (8), 4781-4786, 2017
Transition‐Metal Substitution Doping in Synthetic Atomically Thin Semiconductors
NK Jian Gao, Young Duck Kim, Liangbo Liang, Juan Carlos Idrobo, Phil Chow ...
Advanced Materials, DOI: 10.1002/adma.201601104, 2016
Interfacial charge transfer circumventing momentum mismatch at two-dimensional van der Waals heterojunctions
H Zhu, J Wang, Z Gong, YD Kim, J Hone, XY Zhu
Nano letters 17 (6), 3591-3598, 2017
The role of external defects in chemical sensing of graphene field-effect transistors
B Kumar, K Min, M Bashirzadeh, AB Farimani, MH Bae, D Estrada, ...
Nano letters 13 (5), 1962-1968, 2013
Methane as an effective hydrogen source for single-layer graphene synthesis on Cu foil by plasma enhanced chemical vapor deposition
SSSHC Yong Seung Kim, Jae Hong Lee, Young Duck Kim, Sahng-Kyoon Jerng, Kisu ...
Nanoscale 5 (3), 1221-1226, 2013
Ultrafast graphene light emitters
YD Kim, Y Gao, RJ Shiue, L Wang, B Aslan, MH Bae, H Kim, D Seo, ...
Nano letters 18 (2), 934-940, 2018
Focused-laser-enabled p–n junctions in graphene field-effect transistors
YD Kim, MH Bae, JT Seo, YS Kim, H Kim, JH Lee, JR Ahn, SW Lee, ...
ACS nano 7 (7), 5850-5857, 2013
Influence of the substrate material on the optical properties of tungsten diselenide monolayers
S Lippert, LM Schneider, D Renaud, KN Kang, O Ajayi, J Kuhnert, ...
2D Materials 4 (2), 025045, 2017
Néel-type skyrmions and their current-induced motion in van der Waals ferromagnet-based heterostructures
TE Park, L Peng, J Liang, A Hallal, FS Yasin, X Zhang, KM Song, SJ Kim, ...
Physical Review B 103 (10), 104410, 2021
Thermal radiation control from hot graphene electrons coupled to a photonic crystal nanocavity
RJ Shiue, Y Gao, C Tan, C Peng, J Zheng, DK Efetov, YD Kim, J Hone, ...
Nature communications 10 (1), 1-7, 2019
Screen printing of 2D semiconductors
YD Kim, J Hone
Nature 544 (7649), 167-168, 2017
Gate‐Tunable Hole and Electron Carrier Transport in Atomically Thin Dual‐Channel WSe2/MoS2 Heterostructure for Ambipolar Field‐Effect Transistors
GHK Inyeal Lee, Servin Rathi, Dongsuk Lim, Lijun Li, Jinwoo Park, Yoontae ...
Advanced Materials, DOI: 10.1002/adma. 201601949, 2016
High-frequency micromechanical resonators from aluminium–carbon nanotube nanolaminates
JH Bak, YD Kim, SS Hong, BY Lee, SR Lee, JH Jang, M Kim, K Char, ...
Nature materials 7 (6), 459-463, 2008
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