|Bipolar resistive switching and charge transport in silicon oxide memristor|
AN Mikhaylov, AI Belov, DV Guseinov, DS Korolev, IN Antonov, ...
Materials Science and Engineering: B 194, 48-54, 2015
|Influence of the nature of oxide matrix on the photoluminescence spectrum of ion-synthesized silicon nanostructures|
DI Tetelbaum, ON Gorshkov, AV Ershov, AP Kasatkin, VA Kamin, ...
Thin Solid Films 515 (1), 333-337, 2006
|Field‐and irradiation‐induced phenomena in memristive nanomaterials|
AN Mikhaylov, EG Gryaznov, AI Belov, DS Korolev, AN Sharapov, ...
physica status solidi (c) 13 (10‐12), 870-881, 2016
|Effect of ion doping with donor and acceptor impurities on intensity and lifetime of photoluminescence from SiO2 films with silicon quantum dots|
AN Mikhaylov, DI Tetelbaum, VA Burdov, ON Gorshkov, AI Belov, ...
Journal of nanoscience and nanotechnology 8 (2), 780-788, 2008
|Resistive switching in metal-insulator-metal structures based on germanium oxide and stabilized zirconia|
ON Gorshkov, IN Antonov, AI Belov, AP Kasatkin, AN Mikhaylov
Technical Physics Letters 40 (2), 101-103, 2014
|Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiO x /ZrO2 system containing Si nanoclusters|
AV Ershov, DI Tetelbaum, IA Chugrov, AI Mashin, AN Mikhaylov, ...
Semiconductors 45 (6), 731, 2011
|Peculiarities of the formation and properties of light-emitting structures based on ion-synthesized silicon nanocrystals in SiO2 and Al2O3 matrices|
AN Mikhaylov, AI Belov, AB Kostyuk, IY Zhavoronkov, DS Korolev, ...
Physics of the Solid State 54 (2), 368-382, 2012
|Effect of carbon implantation on visible luminescence and composition of Si-implanted SiO2 layers|
DI Tetelbaum, AN Mikhaylov, VK Vasiliev, AI Belov, AI Kovalev, ...
Surface and Coatings Technology 203 (17-18), 2658-2663, 2009
|Properties of Al2O3: nc-Si nanostructures formed by implantation of silicon ions into sapphire and amorphous films of aluminum oxide|
DI Tetelbaum, AN Mikhaylov, AI Belov, AV Ershov, EA Pitirimova, ...
Physics of the Solid State 51 (2), 409-416, 2009
|Improvement of the photon generation efficiency in phosphorus-doped silicon nanocrystals: Γ–X mixing of the confined electron states|
VA Belyakov, AI Belov, AN Mikhaylov, DI Tetelbaum, VA Burdov
Journal of Physics: Condensed Matter 21 (4), 045803, 2009
|Ion beam synthesis of Si nanocrystals in silicon dioxide and sapphire matrices—the photoluminescence study|
DI Tetelbaum, AN Mikhaylov, ON Gorshkov, AP Kasatkin, AI Belov, ...
Vacuum 78 (2-4), 519-524, 2005
|Formation and “white” photoluminescence of nanoclusters in SiO x films implanted with carbon ions|
AI Belov, AN Mikhaylov, DE Nikolitchev, AV Boryakov, AP Sidorin, ...
Semiconductors 44 (11), 1450-1456, 2010
|Effect of coalescence and of the character of the initial oxide on the photoluminescence of ion-synthesized Si nanocrystals in SiO2|
DI Tetelbaum, ON Gorshkov, AP Kasatkin, AN Mikhaylov, AI Belov, ...
Physics of the Solid State 47 (1), 13-17, 2005
|The influence of P+, B+, and N+ ion implantation on the luminescence properties of the SiO2: nc-Si system|
DI Tetelbaum, ON Gorshkov, VA Burdov, SA Trushin, AN Mikhaylov, ...
Physics of the Solid State 46 (1), 17-21, 2004
|The influence of the annealing conditions on the photoluminescence of ion-implanted SiO2: Si nanosystem at additional phosphorus implantation|
DI Tetelbaum, SA Trushin, AN Mikhaylov, VK Vasil'ev, GA Kachurin, ...
Physica E: Low-dimensional Systems and Nanostructures 16 (3-4), 410-413, 2003
|Formation of weighting coefficients in an artificial neural network based on the memristive effect in metal–oxide–metal nanostructures|
IN Antonov, AI Belov, AN Mikhaylov, OA Morozov, PE Ovchinnikov
Journal of Communications Technology and Electronics 63 (8), 950-957, 2018
|Ion-beam simulation of radiation damage produced by fast neutrons in heterophase structures|
DI Tetelbaum, DV Guseinov, VK Vasiliev, AN Mikhaylov, AI Belov, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2014
|Chemical and phase compositions of silicon oxide films with nanocrystals prepared by carbon ion implantation|
AV Boryakov, DE Nikolitchev, DI Tetelbaum, AI Belov, AV Ershov, ...
Physics of the Solid State 54 (2), 394-403, 2012
|Mechanism of quantum dot luminescence excitation within implanted SiO2: Si: C films|
AF Zatsepin, EA Buntov, VS Kortov, DI Tetelbaum, AN Mikhaylov, AI Belov
Journal of Physics: Condensed Matter 24 (4), 045301, 2012
|Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors|
SV Tikhov, AN Mikhaylov, AI Belov, DS Korolev, IN Antonov, VV Karzanov, ...
Microelectronic Engineering 187, 134-138, 2018