The preparation of copper (II) oxide thin films and the study of their microstructures and optical properties AY Oral, E Menşur, MH Aslan, E Başaran Materials chemistry and physics 83 (1), 140-144, 2004 | 284 | 2004 |
Preparation of c-axis-oriented zinc-oxide thin films and the study of their microstructure and optical properties MH Aslan, AY Oral, E Menşur, A Gül, E Başaran Solar Energy Materials and Solar Cells 82 (4), 543-552, 2004 | 145 | 2004 |
AC conductivity and dielectric properties of Co-doped TiO2 M Okutan, E Basaran, HI Bakan, F Yakuphanoglu Physica B: Condensed Matter 364 (1-4), 300-305, 2005 | 121 | 2005 |
Electrical and optical properties of an organic semiconductor based on polyaniline prepared by emulsion polymerization and fabrication of Ag/polyaniline/n-Si Schottky diode F Yakuphanoglu, E Basaran, BF Şenkal, E Sezer The Journal of Physical Chemistry B 110 (34), 16908-16913, 2006 | 103 | 2006 |
Electronic and interface state density distribution properties of Ag/p-Si Schottky diode M Okutan, E Basaran, F Yakuphanoglu Applied surface science 252 (5), 1966-1973, 2005 | 59 | 2005 |
The effect of impurities on the phase transitions in the ferroelectric semiconductors TlInS2 and TlGaSe2 SS Babaev, E Başaran, TG Mammadov, FA Mikailov, FM Salehli, ... Journal of Physics: Condensed Matter 17 (12), 1985, 2005 | 45 | 2005 |
Dielectric susceptibility behaviour in the incommensurate phase of TlInS2 FA Mikailov, E Başaran, TG Mammadov, MY Seyidov, E Şentürk Physica B: Condensed Matter 334 (1-2), 13-20, 2003 | 39 | 2003 |
Phase transitions and metastable states in TlGaSe2 FA Mikailov, E Başaran, E Şentürk, L Tümbek, TG Mammadov, VP Aliev Phase Transitions 76 (12), 1057-1064, 2003 | 35 | 2003 |
Very high two‐dimensional hole gas mobilities in strained silicon germanium E Basaran, RA Kubiak, TE Whall, EHC Parker Applied physics letters 64 (25), 3470-3472, 1994 | 34 | 1994 |
Determination of phase transition from nematic to isotropic state in carbon nano-balls' doped nematic liquid crystals by electrical conductivity-dielectric measurements M Okutan, SE San, E Basaran, F Yakuphanoglu Physics Letters A 339 (6), 461-465, 2005 | 31 | 2005 |
Improper and proper ferroelectric phase transitions in TlInS2 layered crystal with incommensurate structure FA Mikailov, E Basaran, E Sentürk Journal of Physics: Condensed Matter 13 (4), 727, 2001 | 29 | 2001 |
Time relaxation of metastable chaotic state in TlInS2 FA Mikailov, E Başaran, E Şentürk Solid state communications 122 (3-4), 161-164, 2002 | 22 | 2002 |
Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon E Basaran, CP Parry, RA Kubiak, TE Whall, EHC Parker Journal of crystal growth 157 (1-4), 109-112, 1995 | 22 | 1995 |
Time relaxation of dielectric constant in the commensurate phase of TlGaSe2 FA Mikailov, E Başaran, E Şentürk, L Tümbek, TG Mammadov, VP Aliev Solid state communications 129 (12), 761-764, 2004 | 18 | 2004 |
A novel field effect transistor with dielectric polymer gel A Kösemen, SE San, M Okutan, Z Doğruyol, A Demir, Y Yerli, B Şengez, ... Microelectronic engineering 88 (1), 17-20, 2011 | 16 | 2011 |
Thermal history and dielectric behavior in the incommensurate phase of TlGaSe2 FA Mikailov, E Başaran, L Tümbek, E Şentürk, TG Mammadov Journal of non-crystalline solids 351 (33-36), 2809-2812, 2005 | 12 | 2005 |
Use of side chain thiophene containing copolymer as a non-ionic gel-dielectric material for sandwich OFET assembly B Şengez, Z Doğruyol, SE San, A Kösemen, F Yılmaz, M Okutan, Y Yerli, ... Microelectronic engineering 103, 111-117, 2013 | 11 | 2013 |
Choice of electrolyte for doping profiling in Si by electrochemical C–V technique E Başaran Applied surface science 172 (3-4), 345-350, 2001 | 11 | 2001 |
Elemental boron and antimony doping of MBE Si and SiGe structures grown at temperatures below 600 C AR Powell, RAA Kubiak, SM Newstead, C Parry, NL Mattey, DW Smith, ... Journal of crystal growth 111 (1-4), 907-911, 1991 | 9 | 1991 |
EPR of some irradiated renal stones R Köseogˇlu, E Köseogˇlu, F Köksal, E Başaran, D Demirci Radiation measurements 40 (1), 65-68, 2005 | 6 | 2005 |