Langmuir− Blodgett film deposition of metallic nanoparticles and their application to electronic memory structures S Paul, C Pearson, A Molloy, MA Cousins, M Green, S Kolliopoulou, ...
Nano Letters 3 (4), 533-536, 2003
361 2003 Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices. M Lübben, P Karakolis, V Ioannou-Sougleridis, P Normand, P Dimitrakis, ...
Advanced Materials (Deerfield Beach, Fla.) 27 (40), 6202-6207, 2015
152 2015 Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin layers by low energy ion implantation C Bonafos, M Carrada, N Cherkashin, H Coffin, D Chassaing, ...
Journal of applied physics 95 (10), 5696-5702, 2004
151 2004 Hybrid silicon–organic nanoparticle memory device S Kolliopoulou, P Dimitrakis, P Normand, HL Zhang, N Cant, SD Evans, ...
Journal of Applied Physics 94 (8), 5234-5239, 2003
143 2003 Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis P Normand, E Kapetanakis, P Dimitrakis, D Tsoukalas, K Beltsios, ...
Applied Physics Letters 83 (1), 168-170, 2003
141 2003 Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis P Dimitrakis, E Kapetanakis, D Tsoukalas, D Skarlatos, C Bonafos, ...
Solid-State Electronics 48 (9), 1511-1517, 2004
107 2004 Recent advances in nanoparticle memories D Tsoukalas, P Dimitrakis, S Kolliopoulou, P Normand
Materials Science and Engineering: B 124, 93-101, 2005
83 2005 Yttria-stabilized zirconia cross-point memristive devices for neuromorphic applications AV Emelyanov, KE Nikiruy, VA Demin, VV Rylkov, AI Belov, DS Korolev, ...
Microelectronic Engineering 215, 110988, 2019
81 2019 Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications P Normand, E Kapetanakis, P Dimitrakis, D Skarlatos, K Beltsios, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
68 2004 Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers H Coffin, C Bonafos, S Schamm, N Cherkashin, GB Assayag, A Claverie, ...
Journal of applied physics 99 (4), 2006
66 2006 Si and Ge nanocrystals for future memory devices C Bonafos, M Carrada, G Benassayag, S Schamm-Chardon, J Groenen, ...
Materials Science in Semiconductor Processing 15 (6), 615-626, 2012
50 2012 MOS memory structures by very-low-energy-implanted Si in thin SiO2 P Dimitrakis, E Kapetanakis, P Normand, D Skarlatos, D Tsoukalas, ...
Materials Science and Engineering: B 101 (1-3), 14-18, 2003
49 2003 Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors SV Tikhov, AN Mikhaylov, AI Belov, DS Korolev, IN Antonov, VV Karzanov, ...
Microelectronic Engineering 187, 134-138, 2018
47 2018 Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications C Bonafos, H Coffin, S Schamm, N Cherkashin, GB Assayag, P Dimitrakis, ...
Solid-State Electronics 49 (11), 1734-1744, 2005
46 2005 Electronic memory device based on a single-layer fluorene-containing organic thin film C Pearson, JH Ahn, MF Mabrook, DA Zeze, MC Petty, KT Kamtekar, ...
Applied Physics Letters 91 (12), 2007
43 2007 Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy JE Kruse, L Lymperakis, S Eftychis, A Adikimenakis, G Doundoulakis, ...
Journal of Applied Physics 119 (22), 2016
38 2016 Processing issues in silicon nanocrystal manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications P Normand, P Dimitrakis, E Kapetanakis, D Skarlatos, K Beltsios, ...
Microelectronic engineering 73, 730-735, 2004
36 2004 Understanding the role of defects in Silicon Nitride-based resistive switching memories through oxygen doping N Vasileiadis, P Karakolis, P Mandylas, V Ioannou-Sougleridis, ...
IEEE Transactions on Nanotechnology, 2021
35 2021 Metal nano-floating gate memory devices fabricated at low temperature S Koliopoulou, P Dimitrakis, D Goustouridis, P Normand, C Pearson, ...
Microelectronic Engineering 83 (4-9), 1563-1566, 2006
33 2006 Electrical behavior of memory devices based on fluorene-containing organic thin films P Dimitrakis, P Normand, D Tsoukalas, C Pearson, JH Ahn, MF Mabrook, ...
Journal of Applied Physics 104 (4), 2008
32 2008