| Development of a Selective Chemical Etch To Improve the Conversion Efficiency of Zn-Rich Cu2ZnSnS4 Solar Cells A Fairbrother, E García-Hemme, V Izquierdo-Roca, X Fontané, ... Journal of the American Chemical Society 134 (19), 8018-8021, 2012 | 319 | 2012 |
| Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector E García Hemme, R García Hernansanz, G González Díaz, J Olea Ariza, ... American Institute of Physics, 2014 | 65 | 2014 |
| Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer R García-Hernansanz, E García-Hemme, D Montero, J Olea, A Del Prado, ... Solar energy materials and solar cells 185, 61-65, 2018 | 52 | 2018 |
| Sub-bandgap spectral photo-response analysis of Ti supersaturated Si E García-Hemme, R García-Hernansanz, J Olea, D Pastor, A Del Prado, ... Applied Physics Letters 101 (19), 2012 | 49 | 2012 |
| Insulator to metallic transition due to intermediate band formation in Ti-implanted silicon D Pastor, J Olea, A Del Prado, E García-Hemme, R García-Hernansanz, ... Solar Energy Materials and Solar Cells 104, 159-164, 2012 | 45 | 2012 |
| Experimental verification of intermediate band formation on titanium-implanted silicon H Castán, E Pérez, H García, S Dueñas, L Bailón, J Olea, D Pastor, ... Journal of Applied Physics 113 (2), 2013 | 42 | 2013 |
| Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon E García Hemme, R García Hernansanz, G González Díaz, J Olea Ariza, ... Amer Inst Physics, 2013 | 38 | 2013 |
| Low temperature intermediate band metallic behavior in Ti implanted Si J Olea, D Pastor, E García-Hemme, R García-Hernansanz, Á del Prado, ... Thin Solid Films 520 (21), 6614-6618, 2012 | 25 | 2012 |
| Silicon‐based intermediate‐band infrared photodetector realized by Te hyperdoping M Wang, E García‐Hemme, Y Berencen, R Hübner, Y Xie, L Rebohle, ... Advanced Optical Materials 9 (4), 2001546, 2021 | 23 | 2021 |
| Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si J Olea, D Pastor, Á Del Prado, E García-Hemme, R García-Hernansanz, ... Journal of Applied Physics 114 (5), 2013 | 23 | 2013 |
| UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation D Pastor, J Olea, A Del Prado, E García-Hemme, I Mártil, ... Semiconductor science and technology 26 (11), 115003, 2011 | 22 | 2011 |
| Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap J Olea, E López, E Antolín, A Martí, A Luque, E García-Hemme, D Pastor, ... Journal of Physics D: Applied Physics 49 (5), 055103, 2016 | 20 | 2016 |
| Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications E Pérez, H Castán, H García, S Dueñas, L Bailón, D Montero, ... Applied Physics Letters 106 (2), 2015 | 20 | 2015 |
| A robust method to determine the contact resistance using the van der Pauw set up G González-Díaz, D Pastor, E García-Hemme, D Montero, ... Measurement 98, 151-158, 2017 | 18 | 2017 |
| On the optoelectronic mechanisms ruling Ti‐hyperdoped Si photodiodes E García‐Hemme, D Caudevilla, S Algaidy, F Pérez‐Zenteno, ... Advanced Electronic Materials 8 (2), 2100788, 2022 | 16 | 2022 |
| A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications E Pérez, S Duenas, H Castán, H García, L Bailón, D Montero, ... Journal of Applied Physics 118 (24), 2015 | 15 | 2015 |
| Electrical decoupling effect on intermediate band Ti-implanted silicon layers D Pastor, J Olea, A Del Prado, E García-Hemme, R García-Hernansanz, ... Journal of Physics D: Applied Physics 46 (13), 135108, 2013 | 15 | 2013 |
| Effects of the d-donor level of vanadium on the properties of Zn1− xVxO films E García-Hemme, KM Yu, P Wahnon, G González-Díaz, W Walukiewicz Applied Physics Letters 106 (18), 2015 | 14 | 2015 |
| Meyer Neldel rule application to silicon supersaturated with transition metals E García-Hemme, R García-Hernansanz, J Olea, D Pastor, A del Prado, ... Journal of Physics D: Applied Physics 48 (7), 075102, 2015 | 14 | 2015 |
| Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures E García-Hemme, D Montero, R García-Hernansanz, J Olea, I Mártil, ... Journal of Physics D: Applied Physics 49 (27), 275103, 2016 | 12 | 2016 |
RODRIGO GARCIA HERNANSANZUCMVerified email at ucm.es
