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Mike Kunze
Mike Kunze
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Cited by
Year
MOVPE growth of GaN on Si (1 1 1) substrates
A Dadgar, M Poschenrieder, J Bläsing, O Contreras, F Bertram, ...
Journal of Crystal Growth 248, 556-562, 2003
2192003
High-sheet-charge–carrier-density AlInN∕ GaN field-effect transistors on Si (111)
A Dadgar, F Schulze, J Bläsing, A Diez, A Krost, M Neuburger, E Kohn, ...
Applied physics letters 85 (22), 5400-5402, 2004
1672004
Piezoelectric GaN sensor structures
T Zimmermann, M Neuburger, P Benkart, FJ Hernandez-Guillen, ...
IEEE electron device letters 27 (5), 309-312, 2006
1372006
Transient characteristics of GaN-based heterostructure field-effect transistors
E Kohn, I Daumiller, M Kunze, M Neuburger, M Seyboth, TJ Jenkins, ...
IEEE Transactions on Microwave Theory and Techniques 51 (2), 634-642, 2003
1052003
Field effect transistor
FH Bonn, GB Norris, JM Golio
US Patent 6,160,280, 2000
962000
Field effect transistor
FH Bonn, GB Norris, JM Golio
US Patent 6,160,280, 2000
962000
Diamond junction FETs based on δ-doped channels
A Aleksov, A Vescan, M Kunze, P Gluche, W Ebert, E Kohn, A Bergmeier, ...
Diamond and Related Materials 8 (2-5), 941-945, 1999
941999
P-channel InGaN-HFET structure based on polarization doping
T Zimmermann, M Neuburger, M Kunze, I Daumiller, A Denisenko, ...
IEEE Electron Device Letters 25 (7), 450-452, 2004
842004
Unstrained InAlN/GaN HEMT structure
M Neuburger, T Zimmermann, E Kohn, A Dadgar, F Schulze, A Krtschil, ...
Proceedings. IEEE Lester Eastman Conference on High Performance Devices …, 2004
722004
Diamond diodes and transistors
A Aleksov, A Denisenko, M Kunze, A Vescan, A Bergmaier, G Dollinger, ...
Semiconductor science and technology 18 (3), S59, 2003
712003
Semiconductor sensor
M Kunze, I Daumiler
US Patent 8,129,725, 2012
702012
δ-Doping in diamond
M Kunze, A Vescan, G Dollinger, A Bergmaier, E Kohn
Carbon 37 (5), 787-791, 1999
571999
High‐current AlInN/GaN field effect transistors
A Dadgar, M Neuburger, F Schulze, J Bläsing, A Krtschil, I Daumiller, ...
physica status solidi (a) 202 (5), 832-836, 2005
512005
Surface stability of InGaN-channel based HFETs
M Neuburger, I Daumiller, T Zimmermann, M Kunze, G Koley, ...
Electronics Letters 39 (22), 1614-1616, 2003
292003
GaN power semiconductors for PV inverter applications-Opportunities and risks
T Stubbe, R Mallwitz, R Rupp, G Pozzovivo, W Bergner, O Haeberlen, ...
CIPS 2014; 8th International Conference on Integrated Power Electronics …, 2014
282014
Strains and Stresses in GaN Heteroepitaxy--Sources and Control
A Dadgar, R Clos, G Strassburger, F Schulze, P Veit, T Hempel, J Bläsing, ...
Advances in Solid State Physics, 313-325, 2004
272004
Anisotropic bow and plastic deformation of GaN on silicon
A Dadgar, S Fritze, O Schulz, J Hennig, J Bläsing, H Witte, A Diez, ...
Journal of crystal growth 370, 278-281, 2013
252013
Switching behaviour of GaN-based HFETs: thermal and electronic transients
E Kohn, I Daumiller, M Kunze, J Van Nostrand, J Sewell, T Jenkins
Electronics Letters 38 (12), 1, 2002
232002
Crystallographic and electric properties of MOVPE-grown AlGaN/GaN-based FETs on Si (0 0 1) substrates
F Schulze, O Kisel, A Dadgar, A Krtschil, J Bläsing, M Kunze, I Daumiller, ...
Journal of crystal growth 299 (2), 399-403, 2007
212007
Analysis of surface charging effects in passivated AlGaN-GaN FETs using a MOS test electrode
M Neuburger, J Allgaier, T Zimmermann, I Daumiller, M Kunze, ...
IEEE Electron Device Letters 25 (5), 256-258, 2004
172004
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