Jumpei Kamimura
Jumpei Kamimura
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Near-infrared InGaN nanocolumn light-emitting diodes operated at 1.46 Ám
K Kishino, J Kamimura, K Kamiyama
Applied Physics Express 5 (3), 031001, 2012
Photoelectrochemical properties of (In, Ga) N nanowires for water splitting investigated by in situ electrochemical mass spectroscopy
J Kamimura, P Bogdanoff, J Lähnemann, C Hauswald, L Geelhaar, ...
Journal of the American Chemical Society 135 (28), 10242-10245, 2013
Lattice parameters, deviations from Vegard’s rule, and phonons in InAlN
V Darakchieva, MY Xie, F Tasnadi, IA Abrikosov, L Hultman, B Monemar, ...
Applied Physics Letters 93 (26), 261908, 2008
p-type doping of GaN nanowires characterized by photoelectrochemical measurements
J Kamimura, P Bogdanoff, M Ramsteiner, P Corfdir, F Feix, L Geelhaar, ...
Nano Letters 17 (3), 1529–1537, 2017
Dislocation reduction via selective-area growth of InN accompanied by lateral growth by rf-plasma-assisted molecular-beam epitaxy
J Kamimura, K Kishino, A Kikuchi
Applied Physics Letters 97 (14), 141913, 2010
Growth of high-In-content InAlN nanocolumns on Si (1 1 1) by RF-plasma-assisted molecular-beam epitaxy
J Kamimura, T Kouno, S Ishizawa, A Kikuchi, K Kishino
Journal of crystal growth 300 (1), 160-163, 2007
Photoelectrochemical properties of GaN photoanodes with cobalt phosphate catalyst for solar water splitting in neutral electrolyte
J Kamimura, P Bogdanoff, FF Abdi, J Lähnemann, R van de Krol, ...
The Journal of Physical Chemistry C 121 (23), 12540-12545, 2017
Radial stark effect in (In, Ga) N nanowires
J Lähnemann, P Corfdir, F Feix, J Kamimura, T Flissikowski, HT Grahn, ...
Nano letters 16 (2), 917-925, 2016
Growth of very large InN microcrystals by molecular beam epitaxy using epitaxial lateral overgrowth
J Kamimura, K Kishino, A Kikuchi
Journal of Applied Physics 117 (8), 084314, 2015
Photoluminescence properties of selectively grown InN microcrystals
J Kamimura, K Kishino, A Kikuchi
physica status solidi (RRL)–Rapid Research Letters 6 (4), 157-159, 2012
Low‐temperature photoluminescence studies of In‐rich InAlN nanocolumns
J Kamimura, K Kishino, A Kikuchi
physica status solidi (RRL)–Rapid Research Letters 6 (3), 123-125, 2012
Photoelectrochemical properties of InN nanowire photoelectrodes for solar water splitting
J Kamimura, P Bogdanoff, M Ramsteiner, L Geelhaar, H Riechert
Semiconductor Science and Technology 31 (7), 074001, 2016
Si doping effects on (In, Ga) N nanowires
J Kamimura, M Ramsteiner, L Geelhaar, H Riechert
Journal of Applied Physics 116 (24), 244310, 2014
Epitaxial lateral overgrowth of InN by rf-plasma-assisted molecular-beam epitaxy
J Kamimura, K Kishino, A Kikuchi
Aip Advances 1 (4), 042145, 2011
Energy-and density-dependent dynamics of photoexcited carriers in InN films
K Fukunaga, M Hashimoto, H Kunugita, J Kamimura, A Kikuchi, K Kishino, ...
Applied Physics Letters 95 (23), 232114, 2009
Evaluation of bandgap energy and carrier density of InN nanocolumns
K Fukunaga, K Kouyama, M Hashimoto, J Kamimura, H Kunugita, K Ema, ...
Journal of Luminescence 129 (12), 1735-1738, 2009
Broad band light absorption and high photocurrent of (In, Ga) N nanowire photoanodes resulting from a radial stark effect
J Kamimura, P Bogdanoff, P Corfdir, O Brandt, H Riechert, L Geelhaar
ACS applied materials & interfaces 8 (50), 34490-34496, 2016
High-quality cubic and hexagonal InN crystals studied by micro-Raman scattering and electron backscatter diffraction
J Kamimura, M Ramsteiner, U Jahn, CYJ Lu, A Kikuchi, K Kishino, ...
Journal of Physics D: Applied Physics 49 (15), 155106, 2016
Fundamental optical properties of InN grown by epitaxial lateral overgrowth method
T Kametani, J Kamimura, Y Inose, H Kunugita, A Kikuchi, K Kishino, ...
AIP Conference Proceedings 1566 (1), 107-108, 2013
Photo-excited carrier relaxation dynamics in InN films
M Hashimoto, K Fukunaga, K Kouyama, J Kamimura, H Kunugita, K Ema, ...
Journal of Physics: Conference Series 193 (1), 012053, 2009
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