| Semiconducting black phosphorus: synthesis, transport properties and electronic applications H Liu, Y Du, Y Deng, DY Peide Chemical Society Reviews 44 (9), 2732-2743, 2015 | 1474 | 2015 |
| Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode Y Deng, Z Luo, NJ Conrad, H Liu, Y Gong, S Najmaei, PM Ajayan, J Lou, ... ACS nano 8 (8), 8292-8299, 2014 | 1305 | 2014 |
| Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus Z Luo, J Maassen, Y Deng, Y Du, RP Garrelts, MS Lundstrom, PD Ye, ... Nature Communications 6, 8572, 2015 | 707 | 2015 |
| Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling Y Du, H Liu, Y Deng, PD Ye ACS nano 8 (10), 10035-10042, 2014 | 481 | 2014 |
| Switching mechanism in single-layer molybdenum disulfide transistors: An insight into current flow across Schottky barriers H Liu, M Si, Y Deng, AT Neal, Y Du, S Najmaei, PM Ajayan, J Lou, PD Ye ACS nano 8 (1), 1031-1038, 2014 | 285 | 2014 |
| A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations P Huang, XY Liu, B Chen, HT Li, YJ Wang, YX Deng, KL Wei, L Zeng, ... Transactions on Electron Devices, 1-1, 2013 | 208 | 2013 |
| RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study Y Deng, P Huang, B Chen, X Yang, B Gao, J Wang, L Zeng, G Du, J Kang, ... IEEE Transactions on Electron Devices 60 (2), 719-726, 2013 | 186 | 2013 |
| 3D vertical RRAM-scaling limit analysis and demonstration of 3D array operation S Yu, HY Chen, Y Deng, B Gao, Z Jiang, J Kang, HSP Wong 2013 Symposium on VLSI Technology, T158-T159, 2013 | 63 | 2013 |
| Design and optimization methodology for 3D RRAM arrays Y Deng, HY Chen, B Gao, S Yu, SC Wu, L Zhao, B Chen, Z Jiang, X Liu, ... 2013 IEEE International Electron Devices Meeting, 25.7. 1-25.7. 4, 2013 | 62 | 2013 |
| A physical based analytic model of RRAM operation for circuit simulation P Huang, XY Liu, WH Li, YX Deng, B Chen, Y Lu, B Gao, L Zeng, KL Wei, ... 2012 International Electron Devices Meeting, 26.6. 1-26.6. 4, 2012 | 59 | 2012 |
| Experimental study of plane electrode thickness scaling for 3D vertical resistive random access memory HY Chen, S Yu, B Gao, R Liu, Z Jiang, Y Deng, B Chen, J Kang, ... Nanotechnology 24 (46), 465201, 2013 | 35 | 2013 |
| Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect B Chen, JF Kang, B Gao, YX Deng, LF Liu, XY Liu, Z Fang, HY Yu, ... Electron Device Letters, IEEE, 1-1, 2013 | 34 | 2013 |
| Design guidelines for 3D RRAM cross-point architecture S Yu, Y Deng, B Gao, P Huang, B Chen, X Liu, J Kang, HY Chen, Z Jiang, ... 2014 IEEE International Symposium on Circuits and Systems (ISCAS), 421-424, 2014 | 25 | 2014 |
| Ultrafast Laser‐Shock‐Induced Confined Metaphase Transformation for Direct Writing of Black Phosphorus Thin Films G Qiu, Q Nian, M Motlag, S Jin, B Deng, Y Deng, AR Charnas, PD Ye, ... Advanced Materials 30 (10), 1704405, 2018 | 21 | 2018 |
| ACS Nano 8, 8292 (2014) Y Deng, Z Luo, NJ Conrad, H Liu, Y Gong, S Najmaei, PM Ajayan, J Lou, ... | 21 | |
| Multi-domain compact modeling for GeSbTe-based memory and selector devices and simulation for large-scale 3-D cross-point memory arrays N Xu, J Wang, Y Deng, Y Lu, B Fu, W Choi, U Monga, J Jeon, J Kim, ... 2016 IEEE International Electron Devices Meeting (IEDM), 7.7. 1-7.7. 4, 2016 | 18 | 2016 |
| Towards High-Performance Two-Dimensional Black Phosphorus Optoelectronic Devices: the Role of Metal Contacts Y Deng, NJ Conrad, Z Luo, H Liu, X Xu, PD Ye IEEE International Electron Device Meeting (IEDM), 2014, 2014 | 18 | 2014 |
| Chemically exfoliating large sheets of phosphorene via choline chloride urea viscosity-tuning A Ng, TE Sutto, BR Matis, Y Deng, PD Ye, RM Stroud, TH Brintlinger, ... Nanotechnology 28 (15), 155601, 2017 | 14 | 2017 |
| Optimization of conductive filament of oxide-based resistive-switching random access memory for low operation current by stochastic simulation P Huang, Y Deng, B Gao, B Chen, F Zhang, D Yu, L Liu, G Du, J Kang, ... Japanese Journal of Applied Physics 52 (4S), 04CD04, 2013 | 11 | 2013 |
| 3D RRAM: Design and optimization J Kang, B Gao, B Chen, P Huang, FF Zhang, YX Deng, LF Liu, XY Liu, ... 2014 12th IEEE international conference on solid-state and integrated …, 2014 | 7 | 2014 |
Peide YeRichard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
