| Size‐scalable and high‐density liquid‐metal‐based soft electronic passive components and circuits using soft lithography M Kim, H Alrowais, S Pavlidis, O Brand Advanced Functional Materials 27 (3), 1604466, 2017 | 135 | 2017 |
| Aerosol jet printing for 3-D multilayer passive microwave circuitry F Cai, S Pavlidis, J Papapolymerou, YH Chang, K Wang, C Zhang, ... European Microwave Conference (EuMC), 2014 44th, 512-515, 2014 | 82 | 2014 |
| High resolution aerosol jet printing of D-band printed transmission lines on flexible LCP substrate F Cai, Y Chang, K Wang, WT Khan, S Pavlidis, J Papapolymerou 2014 IEEE MTT-S International Microwave Symposium (IMS2014), 1-3, 2014 | 60 | 2014 |
| Characterization of AlGaN/GaN HEMTs using gate resistance thermometry G Pavlidis, S Pavlidis, ER Heller, EA Moore, R Vetury, S Graham IEEE Transactions on Electron Devices 64 (1), 78-83, 2016 | 53 | 2016 |
| High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates P Reddy, M Hayden Breckenridge, Q Guo, A Klump, D Khachariya, ... Applied Physics Letters 116 (8), 2020 | 41 | 2020 |
| High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN MH Breckenridge, P Bagheri, Q Guo, B Sarkar, D Khachariya, S Pavlidis, ... Applied Physics Letters 118 (11), 2021 | 28 | 2021 |
| Direct correlation between potentiometric and impedance biosensing of antibody-antigen interactions using an integrated system MY Tsai, N Creedon, E Brightbill, S Pavlidis, B Brown, DW Gray, ... Applied Physics Letters 111 (7), 2017 | 17 | 2017 |
| Investigation of surface roughness effects for D-band SIW transmission lines on LCP substrate S Li, M Yi, S Pavlidis, H Yu, M Swaminathan, J Papapolymerou 2017 IEEE Radio and Wireless Symposium (RWS), 121-124, 2017 | 17 | 2017 |
| Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN D Khachariya, D Szymanski, R Sengupta, P Reddy, E Kohn, Z Sitar, ... Journal of Applied Physics 128 (6), 2020 | 16 | 2020 |
| Integrated microfluidic cooling for GaN devices on multilayer organic LCP substrate OL Chlieh, CAD Morcillo, S Pavlidis, WT Khan, J Papapolymerou 2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 1-4, 2013 | 14 | 2013 |
| Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing D Khachariya, S Stein, W Mecouch, MH Breckenridge, S Rathkanthiwar, ... Applied Physics Express 15 (10), 101004, 2022 | 13 | 2022 |
| Role of polarity in SiN on Al/GaN and the pathway to stable contacts P Reddy, D Khachariya, D Szymanski, MH Breckenridge, B Sarkar, ... Semiconductor Science and Technology 35 (5), 055007, 2020 | 13 | 2020 |
| Record> 10 MV/cm mesa breakdown fields in Al0. 85Ga0. 15N/Al0. 6Ga0. 4N high electron mobility transistors on native AlN substrates D Khachariya, S Mita, P Reddy, S Dangi, JH Dycus, P Bagheri, ... Applied Physics Letters 120 (17), 2022 | 12 | 2022 |
| Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN P Reddy, D Khachariya, W Mecouch, MH Breckenridge, P Bagheri, ... Applied Physics Letters 119 (18), 2021 | 12 | 2021 |
| An X-band GaN HEMT hybrid power amplifier with low-loss Wilkinson division on AlN substrate GC Barisich, S Pavlidis, CAD Morcillo, OL Chlieh, J Papapolymerou, ... 2013 IEEE International Conference on Microwaves, Communications, Antennas …, 2013 | 12 | 2013 |
| Encapsulated organic package technology for wideband integration of heterogeneous MMICs S Pavlidis, G Alexopoulos, AÇ Ulusoy, MK Cho, J Papapolymerou IEEE Transactions on Microwave Theory and Techniques 65 (2), 438-448, 2016 | 10 | 2016 |
| A 5.4 W X-band gallium nitride (GaN) power amplifier in an encapsulated organic package S Pavlidis, AÇ Ulusoy, J Papapolymerou 2015 European Microwave Conference (EuMC), 789-792, 2015 | 10 | 2015 |
| Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices S Rathkanthiwar, P Bagheri, D Khachariya, S Mita, S Pavlidis, P Reddy, ... Applied Physics Express 15 (5), 051003, 2022 | 9 | 2022 |
| On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers D Khachariya, D Szymanski, MH Breckenridge, P Reddy, E Kohn, Z Sitar, ... Applied Physics Letters 118 (12), 2021 | 9 | 2021 |
| An ultra-wideband, hybrid, distributed power amplifier using flip-chip bonded GaN devices on AlN substrate AÇ Ulusoy, C Barisich, S Pavlidis, WT Khan, J Papapolymerou 2014 44th European Microwave Conference, 1285-1288, 2014 | 9 | 2014 |
