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Srinivasan Raghavan
Srinivasan Raghavan
Indian Institute of Science
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Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
K Roy, M Padmanabhan, S Goswami, TP Sai, G Ramalingam, ...
Nature nanotechnology 8 (11), 826-830, 2013
14682013
The effect of grain size, porosity and yttria content on the thermal conductivity of nanocrystalline zirconia
S Raghavan, H Wang, RB Dinwiddie, WD Porter, MJ Mayo
Scripta Materialia 39 (8), 1119-1125, 1998
3231998
Thermal properties of zirconia co-doped with trivalent and pentavalent oxides
S Raghavan, H Wang, WD Porter, RB Dinwiddie, MJ Mayo
Acta materialia 49 (1), 169-179, 2001
2032001
Enhancement of the Superconducting Transition Temperature of by a Strain-Induced Bond-Stretching Mode Softening
AV Pogrebnyakov, JM Redwing, S Raghavan, V Vaithyanathan, ...
Physical review letters 93 (14), 147006, 2004
1772004
A predictive approach to CVD of crystalline layers of TMDs: the case of MoS 2
VK Kumar, S Dhar, TH Choudhury, SA Shivashankar, S Raghavan
Nanoscale 7 (17), 7802-7810, 2015
1642015
Microscopic Mechanism of 1/f Noise in Graphene: Role of Energy Band Dispersion
AN Pal, S Ghatak, V Kochat, ES Sneha, A Sampathkumar, S Raghavan, ...
ACS nano 5 (3), 2075-2081, 2011
1222011
Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical-vapor deposition. I. AlN buffer layers
S Raghavan, JM Redwing
Journal of applied physics 98 (2), 2005
1202005
Graphene on paper: a simple, low-cost chemical sensing platform
S Kumar, S Kaushik, R Pratap, S Raghavan
ACS applied materials & interfaces 7 (4), 2189-2194, 2015
1092015
Intrinsic stresses in AlN layers grown by metal organic chemical vapor deposition on (0001) sapphire and (111) Si substrates
S Raghavan, JM Redwing
Journal of applied physics 96 (5), 2995-3003, 2004
992004
Ta2O5/Nb2O5 and Y2O3 Co‐doped Zirconias for Thermal Barrier Coatings
S Raghavan, H Wang, RB Dinwiddie, WD Porter, R Vaβen, D Stöver, ...
Journal of the American Ceramic Society 87 (3), 431-437, 2004
982004
Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors
S Rathkanthiwar, A Kalra, SV Solanke, N Mohta, R Muralidharan, ...
Journal of Applied Physics 121 (16), 2017
972017
Growth stresses and cracking in GaN films on (111) Si grown by metalorganic chemical vapor deposition. II. Graded AlGaN buffer layers
S Raghavan, J Redwing
Journal of applied physics 98 (2), 2005
972005
Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector
A Kalra, S Vura, S Rathkanthiwar, R Muralidharan, S Raghavan, DN Nath
Applied Physics Express 11 (6), 064101, 2018
962018
High contrast imaging and thickness determination of graphene with in-column secondary electron microscopy
V Kochat, A Nath Pal, ES Sneha, A Sampathkumar, A Gairola, ...
Journal of Applied Physics 110 (1), 2011
812011
Graphene field emission devices
S Kumar, GS Duesberg, R Pratap, S Raghavan
Applied Physics Letters 105 (10), 2014
792014
The hot corrosion resistance of 20 mol% YTaO4 stabilized tetragonal zirconia and 14 mol% Ta2O5 stabilized orthorhombic zirconia for thermal barrier coating applications
S Raghavan, MJ Mayo
Surface and Coatings Technology 160 (2-3), 187-196, 2002
792002
Correlation of growth stress and structural evolution during metalorganic chemical vapor deposition of GaN on (111) Si
S Raghavan, X Weng, E Dickey, JM Redwing
Applied physics letters 88 (4), 2006
692006
Ultrahigh field enhancement and photoresponse in atomically separated arrays of plasmonic dimers
D Paria, K Roy, HJ Singh, S Kumar, S Raghavan, A Ghosh, A Ghosh
Advanced materials 27 (10), 1751-1758, 2015
662015
Graphene based E. coli sensor on flexible acetate sheet
PK Basu, D Indukuri, S Keshavan, V Navratna, SRK Vanjari, S Raghavan, ...
Sensors and Actuators B: Chemical 190, 342-347, 2014
622014
Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si
S Raghavan, X Weng, E Dickey, JM Redwing
Applied Physics Letters 87 (14), 2005
622005
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