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Radiation damage effects in Ga 2 O 3 materials and devices
J Kim, SJ Pearton, C Fares, J Yang, F Ren, S Kim, AY Polyakov
Journal of Materials Chemistry C 7 (1), 10-24, 2019
1962019
Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3
AY Polyakov, NB Smirnov, IV Shchemerov, EB Yakimov, SJ Pearton, ...
Applied Physics Letters 113 (9), 2018
912018
Unipolar electron transport polymers: a thiazole based all-electron acceptor approach
Z Yuan, B Fu, S Thomas, S Zhang, G DeLuca, R Chang, L Lopez, C Fares, ...
Chemistry of Materials 28 (17), 6045-6049, 2016
832016
Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays
J Yang, M Xian, P Carey, C Fares, J Partain, F Ren, M Tadjer, E Anber, ...
Applied Physics Letters 114 (23), 2019
682019
Temperature-dependent electrical characteristics of β-Ga2O3 diodes with W Schottky contacts up to 500° C
C Fares, F Ren, SJ Pearton
ECS Journal of Solid State Science and Technology 8 (7), Q3007, 2018
642018
Reverse breakdown in large area, field-plated, vertical β-Ga2O3 rectifiers
J Yang, C Fares, R Elhassani, M Xian, F Ren, SJ Pearton, M Tadjer, ...
ECS Journal of Solid State Science and Technology 8 (7), Q3159, 2019
492019
Effect of probe geometry during measurement of> 100 A Ga2O3 vertical rectifiers
R Sharma, M Xian, C Fares, ME Law, M Tadjer, KD Hobart, F Ren, ...
Journal of Vacuum Science & Technology A 39 (1), 2021
392021
Damage recovery and dopant diffusion in Si and Sn ion implanted β-Ga2O3
MJ Tadjer, C Fares, NA Mahadik, JA Freitas, D Smith, R Sharma, ME Law, ...
ECS Journal of Solid State Science and Technology 8 (7), Q3133, 2019
352019
Effects of fluorine incorporation into β-Ga2O3
J Yang, C Fares, F Ren, R Sharma, E Patrick, ME Law, SJ Pearton, ...
Journal of Applied Physics 123 (16), 2018
352018
Demonstration of a SiC protective coating for titanium implants
C Fares, SM Hsu, M Xian, X Xia, F Ren, JJ Mecholsky Jr, L Gonzaga, ...
Materials 13 (15), 3321, 2020
322020
The role of annealing ambient on diffusion of implanted Si in β-Ga2O3
R Sharma, ME Law, C Fares, M Tadjer, F Ren, A Kuramata, SJ Pearton
AIP Advances 9 (8), 2019
322019
Device processing and junction formation needs for ultra-high power Ga2O3 electronics
F Ren, JC Yang, C Fares, SJ Pearton
MRS Communications 9 (1), 77-87, 2019
312019
Switching behavior and forward bias degradation of 700V, 0.2 A, β-Ga2O3 vertical geometry rectifiers
J Yang, C Fares, F Ren, YT Chen, YT Liao, CW Chang, J Lin, M Tadjer, ...
ECS Journal of Solid State Science and Technology 8 (7), Q3028, 2019
292019
Valence- and Conduction-Band Offsets for Atomic-Layer-Deposited Al2O3 on (010) (Al0.14Ga0.86)2O3
C Fares, F Ren, E Lambers, DC Hays, BP Gila, SJ Pearton
Journal of Electronic Materials 48, 1568-1573, 2019
272019
60Co gamma ray damage in homoepitaxial β-Ga2O3 Schottky rectifiers
J Yang, GJ Koller, C Fares, F Ren, SJ Pearton, J Bae, J Kim, DJ Smith
ECS Journal of Solid State Science and Technology 8 (7), Q3041, 2019
272019
Band alignment of atomic layer deposited SiO2 on (010)(Al0. 14Ga0. 86) 2O3
C Fares, F Ren, E Lambers, DC Hays, BP Gila, SJ Pearton
Journal of Vacuum Science & Technology B 36 (6), 2018
272018
Forward bias degradation and thermal simulations of vertical geometry β-Ga2O3 Schottky rectifiers
M Xian, R Elhassani, C Fares, F Ren, M Tadjer, SJ Pearton
Journal of Vacuum Science & Technology B 37 (6), 2019
252019
Eighteen mega-electron-volt alpha-particle damage in homoepitaxial β-Ga2O3 Schottky rectifiers
J Yang, C Fares, Y Guan, F Ren, SJ Pearton, J Bae, J Kim, A Kuramata
Journal of Vacuum Science & Technology B 36 (3), 2018
252018
Anti-bacterial properties and biocompatibility of novel SiC coating for dental ceramic
SE Afonso Camargo, AS Mohiuddeen, C Fares, JL Partain, PH Carey IV, ...
Journal of Functional Biomaterials 11 (2), 33, 2020
232020
Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010)(Al0. 14Ga0. 86) 2O3
C Fares, F Ren, DC Hays, BP Gila, M Tadjer, KD Hobart, SJ Pearton
Applied Physics Letters 113 (18), 2018
232018
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