Novel applications of photonic band gap materials: Low‐loss bends and high Q cavities RD Meade, A Devenyi, JD Joannopoulos, OL Alerhand, DA Smith, K Kash
Journal of applied physics 75 (9), 4753-4755, 1994
446 1994 Optical spectroscopy of ultrasmall structures etched from quantum wells K Kash, A Scherer, JM Worlock, HG Craighead, MC Tamargo
Applied Physics Letters 49 (16), 1043-1045, 1986
412 1986 Optical properties of III–V semiconductor quantum wires and dots K Kash
Journal of luminescence 46 (2), 69-82, 1990
162 1990 Synthesis, lattice structure, and band gap of ZnSnN2 PC Quayle, K He, J Shan, K Kash
MRS Communications 3 (3), 135-138, 2013
158 2013 Observation of quantum confinement by strain gradients K Kash, BP Van der Gaag, DD Mahoney, AS Gozdz, LT Florez, ...
Physical review letters 67 (10), 1326, 1991
148 1991 Carrier energy relaxation in In0. 53Ga0. 47As determined from picosecond luminescence studies K Kash, J Shah
Applied physics letters 45 (4), 401-403, 1984
140 1984 Strain‐induced lateral confinement of excitons in GaAs‐AlGaAs quantum well microstructures K Kash, JM Worlock, MD Sturge, P Grabbe, JP Harbison, A Scherer, ...
Applied physics letters 53 (9), 782-784, 1988
133 1988 Long-lived spatially indirect excitons in coupled GaAs/ JE Golub, K Kash, JP Harbison, LT Florez
Physical Review B 41 (12), 8564, 1990
127 1990 Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule PC Quayle, EW Blanton, A Punya, GT Junno, K He, L Han, H Zhao, ...
physical review B 91 (20), 205207, 2015
123 2015 Luminescence characteristics of quantum wires grown by organometallic chemical vapor deposition on nonplanar substrates E Kapon, K Kash, EM Clausen Jr, DM Hwang, E Colas
Applied physics letters 60 (4), 477-479, 1992
110 1992 Picosecond luminescence measurements of hot carrier relaxation in III–V semiconductors using sum frequency generation K Kash, J Shah, D Block, AC Gossard, W Wiegmann
Physica B+ C 134 (1-3), 189-198, 1985
109 1985 Strain‐induced confinement of carriers to quantum wires and dots within an InGaAs‐InP quantum well K Kash, R Bhat, DD Mahoney, PSD Lin, A Scherer, JM Worlock, ...
Applied physics letters 55 (7), 681-683, 1989
105 1989 Synthesis and characterization of ZnGeN2 grown from elemental Zn and Ge sources K Du, C Bekele, CC Hayman, JC Angus, P Pirouz, K Kash
Journal of Crystal Growth 310 (6), 1057-1061, 2008
99 2008 Growth of high quality AlInAs by low pressure organometallic chemical vapor deposition for high speed and optoelectronic device applications R Bhat, MA Koza, K Kash, SJ Allen, WP Hong, SA Schwarz, GK Chang, ...
Journal of crystal growth 108 (3-4), 441-448, 1991
95 1991 Aluminum ion‐implantation enhanced intermixing of GaAs‐AlGaAs quantum‐well structures K Kash, B Tell, P Grabbe, EA Dobisz, HG Craighead, MC Tamargo
Journal of applied physics 63 (1), 190-194, 1988
83 1988 Low pressure synthesis of bulk, polycrystalline gallium nitride A Argoitia, CC Hayman, JC Angus, L Wang, JS Dyck, K Kash
Applied Physics Letters 70 (2), 179-181, 1997
78 1997 Electrochemical pinning of the Fermi level: mediation of photoluminescence from gallium nitride and zinc oxide V Chakrapani, C Pendyala, K Kash, AB Anderson, MK Sunkara, JC Angus
Journal of the American Chemical Society 130 (39), 12944-12952, 2008
75 2008 Temperature dependence of luminescence efficiency, exciton transfer, and exciton localization in GaAs/ Y Zhang, MD Sturge, K Kash, BP Van der Gaag, AS Gozdz, LT Florez, ...
Physical Review B 51 (19), 13303, 1995
69 1995 Nonlinear optical studies of picosecond relaxation times of electrons in n ‐GaAs and n ‐GaSb K Kash, PA Wolff, WA Bonner
Applied Physics Letters 42 (2), 173-175, 1983
65 1983 Measurement of nonradiative Auger and radiative recombination rates in strained‐layer quantum‐well systems MC Wang, K Kash, CE Zah, R Bhat, SL Chuang
Applied physics letters 62 (2), 166-168, 1993
61 1993 