Ian T. Ferguson
Ian T. Ferguson
Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University
Dirección de correo verificada de kennesaw.edu
Citado por
Citado por
Design and characterization of solar cells
O Jani, I Ferguson, C Honsberg, S Kurtz
Applied Physics Letters 91 (13), 132117, 2007
Effects of blue light on the circadian system and eye physiology
G Tosini, I Ferguson, K Tsubota
Molecular vision 22, 61, 2016
Very high efficiency solar cell modules
A Barnett, D Kirkpatrick, C Honsberg, D Moore, M Wanlass, K Emery, ...
Progress in Photovoltaics: Research and Applications 17 (1), 75-83, 2009
High quality AIN and GaN epilayers grown on (00⋅ 1) sapphire,(100), and (111) silicon substrates
P Kung, A Saxler, X Zhang, D Walker, TC Wang, I Ferguson, M Razeghi
Applied Physics Letters 66 (22), 2958-2960, 1995
Single-crystal aluminum nitride nanomechanical resonators
AN Cleland, M Pophristic, I Ferguson
Applied Physics Letters 79 (13), 2070-2072, 2001
Spatial characterization of doped SiC wafers by Raman spectroscopy
JC Burton, L Sun, M Pophristic, SJ Lukacs, FH Long, ZC Feng, ...
Journal of Applied Physics 84 (11), 6268-6273, 1998
Magnetic properties of bulk and single crystals
MH Kane, K Shalini, CJ Summers, R Varatharajan, J Nause, CR Vestal, ...
Journal of Applied Physics 97 (2), 023906, 2005
First-and second-order Raman scattering from semi-insulating 4 H− SiC
JC Burton, L Sun, FH Long, ZC Feng, IT Ferguson
Physical Review B 59 (11), 7282, 1999
Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy
DI Florescu, VM Asnin, FH Pollak, AM Jones, JC Ramer, MJ Schurman, ...
Applied physics letters 77 (10), 1464-1466, 2000
Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes
DZ Garbuzov, JC Connolly, RF Karlicek Jr, IT Ferguson
US Patent 6,404,125, 2002
Handbook of zinc oxide and related materials: volume two, devices and nano-engineering
ZC Feng
CRC press, 2012
Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN
M Wraback, H Shen, JC Carrano, T Li, JC Campbell, MJ Schurman, ...
Applied Physics Letters 76 (9), 1155-1157, 2000
Time-resolved photoluminescence measurements of InGaN light-emitting diodes
M Pophristic, FH Long, C Tran, IT Ferguson, RF Karlicek Jr
Applied Physics Letters 73 (24), 3550-3552, 1998
III-nitrides for energy production: photovoltaic and thermoelectric applications
N Lu, I Ferguson
Semiconductor Science and Technology 28 (7), 074023, 2013
High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope
VM Asnin, FH Pollak, J Ramer, M Schurman, I Ferguson
Applied physics letters 75 (9), 1240-1242, 1999
Electrical and magneto-optical of MBE InAs on GaAs
PD Wang, SN Holmes, T Le, RA Stradling, IT Ferguson, AG De Oliveira
Semiconductor science and technology 7 (6), 767, 1992
Milestones toward 50% efficient solar cell modules
A Barnett, D Kirkpatrick, C Honsberg, D Moore, M Wanlass, K Emergy, ...
Zinc oxide as an active n-layer and antireflection coating for silicon based heterojunction solar cell
B Hussain, A Ebong, I Ferguson
Solar Energy Materials and Solar Cells 139, 95-100, 2015
Air-voids embedded high efficiency InGaN-light emitting diode
EH Park, J Jang, S Gupta, I Ferguson, CH Kim, SK Jeon, JS Park
Applied Physics Letters 93 (19), 191103, 2008
Design and Realization of Wide-Band-Gap (2.67 eV) InGaN p-n Junction Solar Cell
BR Jampana, AG Melton, M Jamil, NN Faleev, RL Opila, IT Ferguson, ...
IEEE Electron Device Letters 31 (1), 32-34, 2009
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20