Erica Douglas
Erica Douglas
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High mobility thin-film transistors on paper
W Lim, EA Douglas, SH Kim, DP Norton, SJ Pearton, F Ren, H Shen, ...
Applied Physics Letters 94 (7), 072103, 2009
1012009
Low-voltage indium gallium zinc oxide thin film transistors on paper substrates
W Lim, EA Douglas, DP Norton, SJ Pearton, F Ren, YW Heo, SY Son, ...
Applied Physics Letters 96 (5), 053510, 2010
862010
An AlN/Al0.85Ga0.15N high electron mobility transistor
AG Baca, AM Armstrong, AA Allerman, EA Douglas, CA Sanchez, ...
Applied Physics Letters 109 (3), 033509, 2016
842016
Ultra-wide-bandgap AlGaN power electronic devices
RJ Kaplar, AA Allerman, AM Armstrong, MH Crawford, JR Dickerson, ...
ECS Journal of Solid State Science and Technology 6 (2), Q3061, 2016
582016
Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors
CY Chang, EA Douglas, J Kim, L Lu, CF Lo, BH Chu, DJ Cheney, BP Gila, ...
IEEE Transactions on Device and Materials reliability 11 (1), 187-193, 2011
532011
Degradation mechanisms for GaN and GaAs high speed transistors
DJ Cheney, EA Douglas, L Liu, CF Lo, BP Gila, F Ren, SJ Pearton
Materials 5 (12), 2498-2520, 2012
502012
Low-temperature-fabricated thin film transistors on polyimide clean-room tape
W Lim, EA Douglas, SH Kim, DP Norton, SJ Pearton, F Ren, H Shen, ...
Applied Physics Letters 93 (25), 252103, 2008
472008
Measurement of heterojunction band offsets by x-ray photoelectron spectroscopy
EA Douglas, A Scheurmann, RP Davies, BP Gila, H Cho, V Craciun, ...
Applied Physics Letters 98 (24), 242110, 2011
432011
Improvement in bias stability of amorphous- thin film transistors with passivation layers
W Lim, EA Douglas, DP Norton, SJ Pearton, F Ren, YW Heo, SY Son, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2010
432010
AlGaN/GaN high electron mobility transistor degradation under on-and off-state stress
EA Douglas, CY Chang, DJ Cheney, BP Gila, CF Lo, L Lu, R Holzworth, ...
Microelectronics Reliability 51 (2), 207-211, 2011
422011
Reliability studies of AlGaN/GaN high electron mobility transistors
DJ Cheney, EA Douglas, L Liu, CF Lo, YY Xi, BP Gila, F Ren, D Horton, ...
Semiconductor Science and Technology 28 (7), 074019, 2013
392013
Investigation of the effect of temperature during off-state degradation of AlGaN/GaN high electron mobility transistors
EA Douglas, CY Chang, BP Gila, MR Holzworth, KS Jones, L Liu, J Kim, ...
Microelectronics Reliability 52 (1), 23-28, 2012
382012
Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors
L Liu, TS Kang, DA Cullen, L Zhou, J Kim, CY Chang, EA Douglas, S Jang, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011
382011
Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors
CY Chang, T Anderson, J Hite, L Lu, CF Lo, BH Chu, DJ Cheney, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2010
352010
Al2O3/InGaZnO4 heterojunction band offsets by X-ray photoelectron spectroscopy
H Cho, EA Douglas, A Scheurmann, BP Gila, V Craciun, ES Lambers, ...
Electrochemical and Solid State Letters 14 (11), H431, 2011
312011
Ohmic contacts to Al‐rich AlGaN heterostructures
EA Douglas, S Reza, C Sanchez, D Koleske, A Allerman, B Klein, ...
physica status solidi (a) 214 (8), 1600842, 2017
302017
Band offsets in HfO2/InGaZnO4 heterojunctions
H Cho, EA Douglas, BP Gila, V Craciun, ES Lambers, F Ren, SJ Pearton
Applied Physics Letters 100 (1), 012105, 2012
292012
Al0. 85Ga0. 15N/Al0. 70Ga0. 30N high electron mobility transistors with Schottky gates and large on/off current ratio over temperature
AG Baca, BA Klein, AA Allerman, AM Armstrong, EA Douglas, ...
ECS Journal of Solid State Science and Technology 6 (12), Q161, 2017
282017
Planar ohmic contacts to Al0. 45Ga0. 55N/Al0. 3Ga0. 7N high electron mobility transistors
BA Klein, AG Baca, AM Armstrong, AA Allerman, CA Sanchez, ...
ECS Journal of Solid State Science and Technology 6 (11), S3067, 2017
282017
RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors With 80-nm Gates
AG Baca, BA Klein, JR Wendt, SM Lepkowski, CD Nordquist, ...
IEEE Electron Device Letters 40 (1), 17-20, 2018
262018
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