Daniel Feezell
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Semipolar InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
DF Feezell, JS Speck, SP DenBaars, S Nakamura
Journal of Display Technology 9 (99), 1-9, 2013
342*2013
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
SP DenBaars, D Feezell, K Kelchner, S Pimputkar, CC Pan, CC Yen, ...
Acta Materialia 61 (3), 945-951, 2013
3372013
COPACKING CONFIGURATIONS FOR NONPOLAR GaN AND/OR SEMIPOLAR GaN LEDs
JW Raring, DF Feezell, MP D'evelyn
US Patent App. 12/491,176, 2010
2602010
Demonstration of nonpolar m-plane InGaN/GaN laser diodes
MC Schmidt, KC Kim, RM Farrell, DF Feezell, DA Cohen, M Saito, K Fujito, ...
Japanese journal of applied physics 46 (3L), L190, 2007
2462007
Solid-state optical device having enhanced indium content in active regions
JW Raring, DF Feezell, S Nakamura
US Patent 8,847,249, 2014
2402014
HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN
JW Raring, DF Feezell
US Patent App. 12/481,543, 2010
2332010
High-power blue-violet semipolar (2021) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2
Y Zhao, S Tanaka, CC Pan, K Fujito, D Feezell, JS Speck, SP DenBaars, ...
Applied physics express 4 (8), 082104, 2011
2202011
Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers
RM Farrell, MC Schmidt, KC Kim, H Masui, DF Feezell, JS Speck, ...
US Patent 7,839,903, 2010
2072010
Electrically-pumped (Ga, In, Al) N vertical-cavity surface-emitting laser
DF Feezell, DA Cohen, RM Farrell, M Ishida, S Nakamura
US Patent 7,480,322, 2009
1982009
Optical device structure using GaN substrates for laser applications
JW Raring, DF Feezell, NJ Pfister, R Sharma
US Patent 9,531,164, 2016
1902016
Selective area epitaxy growth method and structure
JW Raring, DF Feezell, S Nakamura
US Patent App. 12/482,440, 2009
1882009
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
Y Zhao, Q Yan, CY Huang, SC Huang, P Shan Hsu, S Tanaka, CC Pan, ...
Applied Physics Letters 100 (20), 201108, 2012
1772012
Self-aligned multi-dielectric-layer lift off process for laser diode stripes
JW Raring, DF Feezell, N Pfister
US Patent 8,143,148, 2012
1622012
Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates
JW Raring, DF Feezell
US Patent 8,259,769, 2012
1602012
Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers
C Holder, JS Speck, SP DenBaars, S Nakamura, D Feezell
Applied Physics Express 5 (9), 092104, 2012
1592012
Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes
DF Feezell, MC Schmidt, KC Kim, RM Farrell, DA Cohen, JS Speck, ...
US Patent 8,211,723, 2012
1552012
Method and structure for manufacture of light emitting diode devices using bulk GaN
C Poblenz, MC Schmidt, DF Feezell, JW Raring, R Sharma
US Patent 8,252,662, 2012
1482012
Optical device structure using miscut GaN substrates for laser applications
JW Raring, DF Feezell, NJ Pfister
US Patent 8,422,525, 2013
1452013
Development of nonpolar and semipolar InGaN/GaN visible light-emitting diodes
DF Feezell, MC Schmidt, SP DenBaars, S Nakamura
MRS bulletin 34 (5), 318-323, 2009
1442009
Self-aligned multi-dielectric-layer lift off process for laser diode stripes
JW Raring, DF Feezell, N Pfister
US Patent 8,728,842, 2014
1392014
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