Physical Mechanisms behind the Field‐Cycling Behavior of HfO2 ‐Based Ferroelectric Capacitors M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ...
Advanced Functional Materials 26 (25), 4601-4612, 2016
702 2016 Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
576 2019 Metal oxide resistive memory switching mechanism based on conductive filament properties G Bersuker, DC Gilmer, D Veksler, P Kirsch, L Vandelli, A Padovani, ...
Journal of Applied Physics 110 (12), 2011
540 2011 Modeling and optimization of a solar energy harvester system for self-powered wireless sensor networks D Dondi, A Bertacchini, D Brunelli, L Larcher, L Benini
IEEE Transactions on industrial electronics 55 (7), 2759-2766, 2008
468 2008 Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ...
Advanced functional materials 27 (10), 1604811, 2017
300 2017 A Physical Model of the Temperature Dependence of the Current Through Stacks L Vandelli, A Padovani, L Larcher, RG Southwick, WB Knowlton, ...
IEEE Transactions on Electron Devices 58 (9), 2878-2887, 2011
269 2011 Analysis of reliability and power efficiency in cascode class-E PAs A Mazzanti, L Larcher, R Brama, F Svelto
IEEE Journal of Solid-State Circuits 41 (5), 1222-1229, 2006
226 2006 Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching A Padovani, L Larcher, O Pirrotta, L Vandelli, G Bersuker
IEEE Transactions on electron devices 62 (6), 1998-2006, 2015
221 2015 Metal oxide RRAM switching mechanism based on conductive filament microscopic properties G Bersuker, DC Gilmer, D Veksler, J Yum, H Park, S Lian, L Vandelli, ...
2010 International Electron Devices Meeting, 19.6. 1-19.6. 4, 2010
163 2010 Grain boundary-driven leakage path formation in HfO2 dielectrics G Bersuker, J Yum, L Vandelli, A Padovani, L Larcher, V Iglesias, M Porti, ...
Solid-State Electronics 65, 146-150, 2011
154 2011 Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ...
ACS nano 15 (11), 17214-17231, 2021
148 2021 Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells L Larcher, G Verzellesi, P Pavan, E Lusky, I Bloom, B Eitan
IEEE Transactions on Electron Devices 49 (11), 1939-1946, 2002
148 2002 Statistical simulation of leakage currents in MOS and flash memory devices with a new multiphonon trap-assisted tunneling model L Larcher
IEEE Transactions on Electron Devices 50 (5), 1246-1253, 2003
137 2003 A Complete Statistical Investigation of RTN in HfO2 -Based RRAM in High Resistive State FM Puglisi, L Larcher, A Padovani, P Pavan
IEEE Transactions on Electron Devices 62 (8), 2606-2613, 2015
123 2015 A solar energy harvesting circuit for low power applications D Dondi, A Bertacchini, L Larcher, P Pavan, D Brunelli, L Benini
2008 IEEE International Conference on Sustainable Energy Technologies, 945-949, 2008
120 2008 Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown Y Ji, C Pan, M Zhang, S Long, X Lian, F Miao, F Hui, Y Shi, L Larcher, ...
Applied Physics Letters 108 (1), 2016
118 2016 A microscopic mechanism of dielectric breakdown in SiO2 films: An insight from multi-scale modeling A Padovani, DZ Gao, AL Shluger, L Larcher
Journal of applied physics 121 (15), 2017
113 2017 Radiation effects on floating-gate memory cells G Cellere, P Pellati, A Chimenton, J Wyss, A Modelli, L Larcher, ...
IEEE Transactions on Nuclear Science 48 (6), 2222-2228, 2001
111 2001 Experimental and theoretical study of electrode effects in HfO2 based RRAM C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ...
2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011
108 2011 Carbon-doped GeTe: a promising material for phase-change memories GB Beneventi, L Perniola, V Sousa, E Gourvest, S Maitrejean, JC Bastien, ...
Solid-State Electronics 65, 197-204, 2011
98 2011