| Semiconductor device having a vertical insulated gate field effect device and a breakdown region remote from the gate AL Goodyear, KM Hutchings US Patent 5,656,843, 1997 | 97 | 1997 |
| Method of manufacturing a semiconductor device comprising an insulated gate field effect device KM Hutchings, KR Whight US Patent 5,378,655, 1995 | 93 | 1995 |
| Method of manufacturing a semiconductor device comprising an insulated gate field effect device KM Hutchings, AL Goodyear, AM Warwick US Patent 5,387,528, 1995 | 42 | 1995 |
| The reduction of hematite to wustite in a laboratory fluidized bed RD Doherty, KM Hutchings, JD Smith, S Yörük Metallurgical Transactions B 16, 425-432, 1985 | 34 | 1985 |
| The low-temperature analysis of narrow GaAs/AlGaAs heterojunction wires JP Bird, ADC Grassie, M Lakrimi, KM Hutchings, P Meeson, JJ Harris, ... Journal of Physics: Condensed Matter 3 (17), 2897, 1991 | 33 | 1991 |
| Semiconductor component having two integrated insulated gate field effect devices KM Hutchings, AL Goodyear, PA Gough US Patent 5,352,915, 1994 | 31 | 1994 |
| Method of forming a semiconductor device having a vertical insulated gate FET and a breakdown region remote from the gate AL Goodyear, KM Hutchings US Patent 5,527,720, 1996 | 25 | 1996 |
| Shubnikov-de Haas effect in submicron-width heterojunction wires ADC Grassie, KM Hutchings, M Lakrimi, CT Foxon, JJ Harris Physical Review B 36 (8), 4551, 1987 | 23 | 1987 |
| Reduction of hematite in a bubbling fluidized bed using H2, CO, and H2-CO mixtures KM Hutchings, JD Smith, S Yörük, RJ Hawkins Ironmaking & steelmaking 14 (3), 103-109, 1987 | 23 | 1987 |
| Use of methane in a fluidised bed during reduction of iron ore KM Hutchings, JD Smith, RJ Hawkins Ironmaking Steelmaking;(United Kingdom) 15 (3), 1988 | 20 | 1988 |
| Coherence limiting length scale in ultra high mobility GaAs/AlGaAs heterojunction wires JP Bird, ADC Grassie, M Lakrimi, KM Hutchings, P Meeson, JJ Harris, ... Surface science 267 (1-3), 277-281, 1992 | 15 | 1992 |
| Quantum size effects in GaAs-Ga1-xAlxAs heterojunction wires M Lakrimi, ADC Grassie, KM Hutchings, JJ Harris, CT Foxon Semiconductor science and technology 4 (4), 313, 1989 | 14 | 1989 |
| The fabrication of sub-micron width mesas in GaAs/Ga1-xAlxAs heterojunction material KM Hutchings, ADC Grassie, M Lakrimi, J Bird Semiconductor science and technology 3 (10), 1057, 1988 | 7 | 1988 |
| Transport properties of a gated, double quantum well HEMT JJ Harris, BJ Van der Velde, C Roberts, K Woodbridge, KM Hutchings Semiconductor science and technology 6 (7), 616, 1991 | 6 | 1991 |
| Zero-current voltage oscillations in GaAs-AlGaAs heterojunctions ADC Grassie, M Lakrimi, KM Hutchings, JJ Harris Semiconductor science and technology 3 (10), 983, 1988 | 4 | 1988 |
| Electron wave interference in ballistic and quasi-ballistic nanostructures K Ishibashi, JP Bird, DK Ferry, M Lakrimi, ADC Grassie, KM Hutchings, ... Japanese journal of applied physics 34 (12S), 6966, 1995 | 3 | 1995 |
| Magnetoconductivity probe of inhomogeneity in GaAs-GaAlAs heterojunctions M Lakrimi, ADC Grassie, KM Hutchings, JP Bird, JJ Harris, CT Foxon Physica B: Condensed Matter 184 (1-4), 206-210, 1993 | 2 | 1993 |
| Conductance Fluctuation Phenomena in Submicron Width High Mobility GaAs/AlGaAs Heterojunctions JP Bird, ADC Grassie, M Lakrimi, KM Hutchings, JJ Harris, CT Foxon High Magnetic Fields in Semiconductor Physics II: Transport and Optics …, 1989 | | 1989 |
| Reduction and carburisation of iron ore in a fluidised bed KM Hutchings University of Sussex, 1984 | | 1984 |
