P–N Junction Diode using Plasma Boron-Doped Black Phosphorus for High-Performance Photovoltaic Devices DK Kim, SB Hong, K Jeong, C Lee, H Kim, MH Cho ACS nano 13 (2), 1683-1693, 2019 | 42 | 2019 |
Controlling the defects and transition layer in SiO2 films grown on 4H-SiC via direct plasma-assisted oxidation DK Kim, KS Jeong, YS Kang, HK Kang, SW Cho, SO Kim, D Suh, S Kim, ... Scientific reports 6 (1), 34945, 2016 | 41 | 2016 |
Structural Evolution and the Control of Defects in Atomic Layer Deposited HfO2–Al2O3 Stacked Films on GaAs YS Kang, DK Kim, KS Jeong, MH Cho, CY Kim, KB Chung, H Kim, ... ACS Applied Materials & Interfaces 5 (6), 1982-1989, 2013 | 41 | 2013 |
Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates HK Kang, YS Kang, DK Kim, M Baik, JD Song, Y An, H Kim, MH Cho ACS Applied Materials & Interfaces 9 (20), 17526-17535, 2017 | 24 | 2017 |
Structural and Electrical Properties of EOT HfO2 (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability YS Kang, HK Kang, DK Kim, KS Jeong, M Baik, Y An, H Kim, JD Song, ... ACS applied materials & interfaces 8 (11), 7489-7498, 2016 | 22 | 2016 |
Improving Electrical Properties by Effective Sulfur Passivation via Modifying the Surface State of Substrate in HfO2/InP Systems HK Kang, YS Kang, M Baik, KS Jeong, DK Kim, JD Song, MH Cho The Journal of Physical Chemistry C 122 (13), 7226-7235, 2018 | 19 | 2018 |
Electric field effect dominated bipolar resistive switching through interface control in a Pt/TiO 2/TiN structure DH Lim, GY Kim, JH Song, KS Jeong, DC Kim, SW Nam, MH Cho, TG Lee RSC Advances 5 (1), 221-230, 2015 | 19 | 2015 |
Effects of Nitrogen Incorporation in HfO2 Grown on InP by Atomic Layer Deposition: An Evolution in Structural, Chemical, and Electrical Characteristics YS Kang, DK Kim, HK Kang, KS Jeong, MH Cho, DH Ko, H Kim, JH Seo, ... ACS applied materials & interfaces 6 (6), 3896-3906, 2014 | 17 | 2014 |
Effects of spontaneous nitrogen incorporation by a 4 H-SiC (0001) surface caused by plasma nitridation DK Kim, YS Kang, KS Jeong, HK Kang, SW Cho, KB Chung, H Kim, ... Journal of Materials Chemistry C 3 (19), 5078-5088, 2015 | 10 | 2015 |
Defect States below the Conduction Band Edge of HfO2 Grown on InP by Atomic Layer Deposition YS Kang, DK Kim, HK Kang, S Cho, S Choi, H Kim, JH Seo, J Lee, ... The Journal of Physical Chemistry C 119 (11), 6001-6008, 2015 | 9 | 2015 |
Interface engineering for a stable chemical structure of oxidized-black phosphorus via self-reduction in AlO x atomic layer deposition DK Kim, J Chae, SB Hong, H Park, KS Jeong, HW Park, SR Kwon, ... Nanoscale 10 (48), 22896-22907, 2018 | 8 | 2018 |
Reduction of defect states in atomic-layered HfO2 film on SiC substrate using post-nitridation annealing S Kwon, DK Kim, MH Cho, KB Chung Thin Solid Films 645, 102-107, 2018 | 7 | 2018 |
Electrical properties of the HfO2–Al2O3 nanolaminates with homogeneous and graded compositions on InP C Mahata, Y An, S Choi, YC Byun, DK Kim, T Lee, J Kim, MH Cho, H Kim Current Applied Physics 16 (3), 294-299, 2016 | 6 | 2016 |
Change in crystalline structure and band alignment in atomic‐layer‐deposited HfO2 on InP using an annealing treatment YS Kang, DK Kim, MH Cho, JH Seo, HK Shon, TG Lee, YD Cho, SW Kim, ... physica status solidi (a) 210 (8), 1612-1617, 2013 | 4 | 2013 |
Structural Evolution and Electrical Properties of Highly Active Plasma Process on 4H-SiC DK Kim, MH Cho Applied Science and Convergence Technology 26 (5), 133-138, 2017 | 2 | 2017 |
Enhanced electrical properties by post thermal nitridation in atomic-layer-deposited HfO2 on InP YS Kang, DK Kim, HK Kang, KS Jeong, MH Cho, DH Ko, H Kim, JH Seo, ... APS March Meeting Abstracts 2014, Z53. 008, 2014 | | 2014 |
Interfacial reaction induced strain relaxation in Hf‐silicate film on strained Si0.7Ge0.3 (001) as a function of annealing temperature DK Kim, YS Kang, HK Kang, MH Cho, DH Ko, SY Lee, DC Kim, CS Kim, ... physica status solidi (a) 210 (11), 2499-2502, 2013 | | 2013 |