| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 184 | 2019 |
| Surface roughness at the interfaces in fully depleted silicon-on-insulator inversion layers F Gamiz, JB Roldan, JA Lopez-Villanueva, P Cartujo-Cassinello, ... Journal of Applied Physics 86 (12), 6854-6863, 1999 | 141 | 1999 |
| Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's F Gámiz, JA López-Villanueva, JB Roldán, JE Carceller, P Cartujo IEEE Transactions on Electron Devices 45 (5), 1122-1126, 1998 | 98 | 1998 |
| Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects JB Roldan, A Godoy, F Gamiz, M Balaguer IEEE transactions on electron devices 55 (1), 411-416, 2007 | 90 | 2007 |
| Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility L Donetti, F Gámiz, JB Roldán, A Godoy Journal of applied physics 100 (1), 013701, 2006 | 82 | 2006 |
| Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates F Gamiz, P Cartujo-Cassinello, JB Roldán, F Jiménez-Molinos Journal of Applied Physics 92 (1), 288-295, 2002 | 82 | 2002 |
| Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers F Gamiz, JB Roldán, P Cartujo-Cassinello, JA López-Villanueva, ... Journal of Applied Physics 89 (3), 1764-1770, 2001 | 79 | 2001 |
| A Monte Carlo study on the electron‐transport properties of high‐performance strained‐Si on relaxed Si1−xGex channel MOSFETs JB Roldán, F Gámiz, JA López‐Villanueva, JE Carceller Journal of applied physics 80 (9), 5121-5128, 1996 | 69 | 1996 |
| Modeling effects of electron-velocity overshoot in a MOSFET JB Roldan, F Gamiz, JA Lopez-Villanueva, JE Carceller IEEE Transactions on Electron Devices 44 (5), 841-846, 1997 | 63 | 1997 |
| Simulation of thermal reset transitions in resistive switching memories including quantum effects MA Villena, MB González, F Jiménez-Molinos, F Campabadal, JB Roldán, ... Journal of Applied Physics 115 (21), 214504, 2014 | 60 | 2014 |
| Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers F Gamiz, JB Roldán, P Cartujo-Cassinello, JE Carceller, ... Journal of applied physics 86 (11), 6269-6275, 1999 | 60 | 1999 |
| An in-depth simulation study of thermal reset transitions in resistive switching memories MA Villena, F Jiménez-Molinos, JB Roldán, J Suñé, S Long, X Lian, ... Journal of Applied Physics 114 (14), 144505, 2013 | 56 | 2013 |
| Scattering of electrons in silicon inversion layers by remote surface roughness F Gamiz, JB Roldan Journal of applied physics 94 (1), 392-399, 2003 | 50 | 2003 |
| Monte Carlo simulation of remote-Coulomb-scattering-limited mobility in metal–oxide–semiconductor transistors F Gámiz, JB Roldan, JE Carceller, P Cartujo Applied physics letters 82 (19), 3251-3253, 2003 | 43 | 2003 |
| Phonon-limited electron mobility in ultrathin silicon-on-insulator inversion layers F Gámiz, JB Roldán, JA López-Villanueva Journal of Applied Physics 83 (9), 4802-4806, 1998 | 39 | 1998 |
| The dependence of the electron mobility on the longitudinal electric field in MOSFETs JB Roldán, F Gámiz, JA López-Villanueva, JE Carceller, P Cartujo Semiconductor science and technology 12 (3), 321, 1997 | 39 | 1997 |
| An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs MA Villena, MB González, JB Roldán, F Campabadal, F Jiménez-Molinos, ... Solid-State Electronics 111, 47-51, 2015 | 38 | 2015 |
| Coulomb scattering in strained‐silicon inversion layers on Si1−xGex substrates F Gámiz, JB Roldán, JA López‐Villanueva, P Cartujo Applied physics letters 69 (6), 797-799, 1996 | 38 | 1996 |
| A SPICE Compact Model for Unipolar RRAM Reset Process Analysis F Jimenez-Molinos, MA Villena, JB Roldan, AM Roldan IEEE Transactions on Electron Devices, 2015 | 37 | 2015 |
| An Analytical – Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects JB Roldan, F Gamiz, F Jiménez-Molinos, C Sampedro, A Godoy, ... IEEE transactions on electron devices 57 (11), 2925-2933, 2010 | 37 | 2010 |
Francisco GamizProfessor of ElectronicsVerified email at ugr.es
