Juan B. Roldán
Juan B. Roldán
Department of Electronics and Computer Technology. Granada University (Spain)
Verified email at ugr.es
Title
Cited by
Cited by
Year
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
1842019
Surface roughness at the interfaces in fully depleted silicon-on-insulator inversion layers
F Gamiz, JB Roldan, JA Lopez-Villanueva, P Cartujo-Cassinello, ...
Journal of Applied Physics 86 (12), 6854-6863, 1999
1411999
Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's
F Gámiz, JA López-Villanueva, JB Roldán, JE Carceller, P Cartujo
IEEE Transactions on Electron Devices 45 (5), 1122-1126, 1998
981998
Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects
JB Roldan, A Godoy, F Gamiz, M Balaguer
IEEE transactions on electron devices 55 (1), 411-416, 2007
902007
Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility
L Donetti, F Gámiz, JB Roldán, A Godoy
Journal of applied physics 100 (1), 013701, 2006
822006
Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates
F Gamiz, P Cartujo-Cassinello, JB Roldán, F Jiménez-Molinos
Journal of Applied Physics 92 (1), 288-295, 2002
822002
Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers
F Gamiz, JB Roldán, P Cartujo-Cassinello, JA López-Villanueva, ...
Journal of Applied Physics 89 (3), 1764-1770, 2001
792001
A Monte Carlo study on the electron‐transport properties of high‐performance strained‐Si on relaxed Si1−xGex channel MOSFETs
JB Roldán, F Gámiz, JA López‐Villanueva, JE Carceller
Journal of applied physics 80 (9), 5121-5128, 1996
691996
Modeling effects of electron-velocity overshoot in a MOSFET
JB Roldan, F Gamiz, JA Lopez-Villanueva, JE Carceller
IEEE Transactions on Electron Devices 44 (5), 841-846, 1997
631997
Simulation of thermal reset transitions in resistive switching memories including quantum effects
MA Villena, MB González, F Jiménez-Molinos, F Campabadal, JB Roldán, ...
Journal of Applied Physics 115 (21), 214504, 2014
602014
Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers
F Gamiz, JB Roldán, P Cartujo-Cassinello, JE Carceller, ...
Journal of applied physics 86 (11), 6269-6275, 1999
601999
An in-depth simulation study of thermal reset transitions in resistive switching memories
MA Villena, F Jiménez-Molinos, JB Roldán, J Suñé, S Long, X Lian, ...
Journal of Applied Physics 114 (14), 144505, 2013
562013
Scattering of electrons in silicon inversion layers by remote surface roughness
F Gamiz, JB Roldan
Journal of applied physics 94 (1), 392-399, 2003
502003
Monte Carlo simulation of remote-Coulomb-scattering-limited mobility in metal–oxide–semiconductor transistors
F Gámiz, JB Roldan, JE Carceller, P Cartujo
Applied physics letters 82 (19), 3251-3253, 2003
432003
Phonon-limited electron mobility in ultrathin silicon-on-insulator inversion layers
F Gámiz, JB Roldán, JA López-Villanueva
Journal of Applied Physics 83 (9), 4802-4806, 1998
391998
The dependence of the electron mobility on the longitudinal electric field in MOSFETs
JB Roldán, F Gámiz, JA López-Villanueva, JE Carceller, P Cartujo
Semiconductor science and technology 12 (3), 321, 1997
391997
An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs
MA Villena, MB González, JB Roldán, F Campabadal, F Jiménez-Molinos, ...
Solid-State Electronics 111, 47-51, 2015
382015
Coulomb scattering in strained‐silicon inversion layers on Si1−xGex substrates
F Gámiz, JB Roldán, JA López‐Villanueva, P Cartujo
Applied physics letters 69 (6), 797-799, 1996
381996
A SPICE Compact Model for Unipolar RRAM Reset Process Analysis
F Jimenez-Molinos, MA Villena, JB Roldan, AM Roldan
IEEE Transactions on Electron Devices, 2015
372015
An Analytical Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects
JB Roldan, F Gamiz, F Jiménez-Molinos, C Sampedro, A Godoy, ...
IEEE transactions on electron devices 57 (11), 2925-2933, 2010
372010
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