Juan B. Roldán

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Francisco Jiménez-MolinosUniversidad de GranadaVerified email at ugr.es
Francisco GamizProfessor of ElectronicsVerified email at ugr.es
Mireia Bargalló GonzalezInstitut de Microelectrònica de Barcelona IMB-CNM (CSIC)Verified email at csic.es
Francesca Campabadal SeguraInstitut de Microelectronica de Barcelona, IMB-CNM, CSICVerified email at imb-cnm.csic.es
Juan A. López-VillanuevaCatedrático de Tecnología Electrónica, Universidad de GranadaVerified email at ugr.es
David Maldonado CorreaIHP GmbH - Leibniz-Institute for innovative microelectronicsVerified email at ihp-microelectronics.com
Mario LanzaIEEE Fellow | Associate Professor at National University of SingaporeVerified email at kaust.edu.sa
Andres GodoyUniversidad de GranadaVerified email at ugr.es
Gerardo González-CorderoVerified email at correo.ugr.es
Marco A. VillenaUniversity of GranadaVerified email at ugr.es
Ana Maria AguileraProfesora de Estadística, Universidad de GranadaVerified email at ugr.es
Samuel Aldana DelgadoPostdoctoral research fellow in Tyndall National InstituteVerified email at tyndall.ie
Rocío Romero ZalizUniversidad de GranadaVerified email at decsai.ugr.es
Enrique MirandaUniversitat Autonoma de BarcelonaVerified email at uab.cat
Christian WengerIHP GmbH - Leibniz institute for innovative microelectronicsVerified email at ihp-microelectronics.com
Andrés Roldán ArandaAssociate Professor of Electronics Engineering, University of GranadaVerified email at ugr.es
Jordi SuñéProfessor, IEEE Fellow, Universitat Autònoma de BarcelonaVerified email at uab.cat
Wenwen ZhengKing Abdullah University of Science and TechnologyVerified email at kaust.edu.sa
Kaichen ZhuKing Abdullah University of Science and Technology, University of BarcelonaVerified email at kaust.edu.sa
Christian AcalUniversidad de GranadaVerified email at ugr.es

Juan B. Roldán

Department of Electronics and Computer Technology. Granada University (Spain)

Verified email at ugr.es

Nanoelectronics RRAMs Memristors Circuit and electron device simulation Electron device compact modeling


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Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019	630	2019
Memristive technologies for data storage, computation, encryption, and radio-frequency communication M Lanza, A Sebastian, WD Lu, M Le Gallo, MF Chang, D Akinwande, ... Science 376 (6597), eabj9979, 2022	409	2022
Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021	181	2021
Hybrid 2D/CMOS microchips for memristive applications K Zhu, S Pazos, F Aguirre, Y Shen, Y Yuan, W Zheng, O Alharbi, ... Nature, 1-3, 2023	153	2023
Surface roughness at the interfaces in fully depleted silicon-on-insulator inversion layers F Gámiz, JB Roldán, JA López-Villanueva, P Cartujo-Cassinello, ... Journal of Applied Physics 86 (12), 6854-6863, 1999	147	1999
Stochastic resonance in a metal-oxide memristive device AN Mikhaylov, DV Guseinov, AI Belov, DS Korolev, VA Shishmakova, ... Chaos, Solitons & Fractals 144, 110723, 2021	144	2021
Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's F Gámiz, JA López-Villanueva, JB Roldán, JE Carceller, P Cartujo IEEE Transactions on Electron Devices 45 (5), 1122-1126, 1998	102	1998
Advanced Data Encryption using 2D Materials C Wen, X Li, T Zanotti, FM Puglisi, Y Shi, F Saiz, A Antidormi, S Roche, ... Advanced Materials 33 (27), 2100185, 2021	101	2021
Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects JB Roldan, A Godoy, F Gamiz, M Balaguer IEEE transactions on electron devices 55 (1), 411-416, 2007	101	2007
Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility L Donetti, F Gámiz, JB Roldán, A Godoy Journal of Applied Physics 100 (1), 2006	91	2006
Variability in Resistive Memories JB Roldán, E Miranda, D Maldonado, AN Mikhaylov, NV Agudov, ... Advanced Intelligent Systems, 2200338, 2023	87	2023
Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al: HfO2/TiN RRAMs E Pérez, D Maldonado, C Acal, JE Ruiz-Castro, FJ Alonso, AM Aguilera, ... Microelectronic Engineering 214, 104-109, 2019	87	2019
Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates F Gamiz, P Cartujo-Cassinello, JB Roldán, F Jiménez-Molinos Journal of Applied Physics 92 (1), 288-295, 2002	85	2002
Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach S Aldana, P García-Fernández, R Romero-Zaliz, MB González, ... Journal of Physics D: Applied Physics 53 (22), 225106, 2020	84	2020
Simulation of thermal reset transitions in resistive switching memories including quantum effects MA Villena, MB González, F Jiménez-Molinos, F Campabadal, JB Roldán, ... Journal of Applied Physics 115 (21), 2014	81	2014
Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers F Gamiz, JB Roldán, P Cartujo-Cassinello, JA López-Villanueva, ... Journal of Applied Physics 89 (3), 1764-1770, 2001	80	2001
A Monte Carlo study on the electron‐transport properties of high‐performance strained‐Si on relaxed Si_1−xGe_x channel MOSFETs JB Roldán, F Gámiz, JA López‐Villanueva, JE Carceller Journal of applied physics 80 (9), 5121-5128, 1996	79	1996
A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs S Aldana, P García-Fernández, A Rodríguez-Fernández, R Romero-Zaliz, ... Journal of Physics D: Applied Physics 50 (33), 335103, 2017	78	2017
An in-depth simulation study of thermal reset transitions in resistive switching memories MA Villena, F Jiménez-Molinos, JB Roldán, J Suñé, S Long, X Lian, ... Journal of Applied Physics 114 (14), 2013	75	2013
Modeling effects of electron-velocity overshoot in a MOSFET JB Roldan, F Gamiz, JA Lopez-Villanueva, JE Carceller IEEE Transactions on Electron Devices 44 (5), 841-846, 1997	74	1997

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