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Juan B. Roldán
Juan B. Roldán
Department of Electronics and Computer Technology. Granada University (Spain)
Verified email at ugr.es
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Cited by
Cited by
Year
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
5662019
Memristive technologies for data storage, computation, encryption, and radio-frequency communication
M Lanza, A Sebastian, WD Lu, M Le Gallo, MF Chang, D Akinwande, ...
Science 376 (6597), eabj9979, 2022
2262022
Surface roughness at the interfaces in fully depleted silicon-on-insulator inversion layers
F Gamiz, JB Roldan, JA López-Villanueva, P Cartujo-Cassinello, ...
Journal of Applied Physics 86 (12), 6854-6863, 1999
1541999
Standards for the characterization of endurance in resistive switching devices
M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ...
ACS nano 15 (11), 17214-17231, 2021
1372021
Stochastic resonance in a metal-oxide memristive device
AN Mikhaylov, DV Guseinov, AI Belov, DS Korolev, VA Shishmakova, ...
Chaos, Solitons & Fractals 144, 110723, 2021
1252021
Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's
F Gámiz, JA López-Villanueva, JB Roldán, JE Carceller, P Cartujo
IEEE Transactions on Electron Devices 45 (5), 1122-1126, 1998
1031998
Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects
JB Roldan, A Godoy, F Gamiz, M Balaguer
IEEE transactions on electron devices 55 (1), 411-416, 2007
1002007
Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility
L Donetti, F Gámiz, JB Roldán, A Godoy
Journal of Applied Physics 100 (1), 2006
912006
Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates
F Gamiz, P Cartujo-Cassinello, JB Roldán, F Jiménez-Molinos
Journal of Applied Physics 92 (1), 288-295, 2002
852002
Simulation of thermal reset transitions in resistive switching memories including quantum effects
MA Villena, MB González, F Jiménez-Molinos, F Campabadal, JB Roldán, ...
Journal of Applied Physics 115 (21), 2014
802014
Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers
F Gamiz, JB Roldán, P Cartujo-Cassinello, JA López-Villanueva, ...
Journal of Applied Physics 89 (3), 1764-1770, 2001
792001
Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al: HfO2/TiN RRAMs
E Pérez, D Maldonado, C Acal, JE Ruiz-Castro, FJ Alonso, AM Aguilera, ...
Microelectronic Engineering 214, 104-109, 2019
762019
Advanced Data Encryption using 2D Materials
C Wen, X Li, T Zanotti, FM Puglisi, Y Shi, F Saiz, A Antidormi, S Roche, ...
Advanced Materials 33 (27), 2100185, 2021
732021
Modeling effects of electron-velocity overshoot in a MOSFET
JB Roldan, F Gamiz, JA Lopez-Villanueva, JE Carceller
IEEE Transactions on Electron Devices 44 (5), 841-846, 1997
731997
A Monte Carlo study on the electron‐transport properties of high‐performance strained‐Si on relaxed Si1−xGex channel MOSFETs
JB Roldán, F Gámiz, JA López‐Villanueva, JE Carceller
Journal of applied physics 80 (9), 5121-5128, 1996
731996
A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs
S Aldana, P García-Fernández, A Rodríguez-Fernández, R Romero-Zaliz, ...
Journal of Physics D: Applied Physics 50 (33), 335103, 2017
692017
An in-depth simulation study of thermal reset transitions in resistive switching memories
MA Villena, F Jiménez-Molinos, JB Roldán, J Suñé, S Long, X Lian, ...
Journal of Applied Physics 114 (14), 2013
692013
Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers
F Gamiz, JB Roldán, P Cartujo-Cassinello, JE Carceller, ...
Journal of applied physics 86 (11), 6269-6275, 1999
641999
Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach
S Aldana, P García-Fernández, R Romero-Zaliz, MB González, ...
Journal of Physics D: Applied Physics 53 (22), 225106, 2020
632020
{SIM}^2 {RRAM}: a physical model for RRAM devices simulation
MA Villena, JB Roldán, F Jiménez-Molinos, E Miranda, J Suñé, M Lanza
Journal of Computational Electronics, 1-26, 2017
59*2017
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