| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 574 | 2019 |
| Electronic synapses made of layered two-dimensional materials Y Shi, X Liang, B Yuan, V Chen, H Li, F Hui, Z Yu, F Yuan, E Pop, ... Nature Electronics 1 (8), 458-465, 2018 | 542 | 2018 |
| Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ... Advanced functional materials 27 (10), 1604811, 2017 | 300 | 2017 |
| Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks S Chen, MR Mahmoodi, Y Shi, C Mahata, B Yuan, X Liang, C Wen, F Hui, ... Nature Electronics 3 (10), 638-645, 2020 | 267 | 2020 |
| Nanoscale characterization of PM2.5 airborne pollutants reveals high adhesiveness and aggregation capability of soot particles Y Shi, Y Ji, H Sun, F Hui, J Hu, Y Wu, J Fang, H Lin, J Wang, H Duan, ... Scientific reports 5 (1), 11232, 2015 | 132 | 2015 |
| Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown Y Ji, C Pan, M Zhang, S Long, X Lian, F Miao, F Hui, Y Shi, L Larcher, ... Applied Physics Letters 108 (1), 2016 | 118 | 2016 |
| On the use of two dimensional hexagonal boron nitride as dielectric F Hui, C Pan, Y Shi, Y Ji, E Grustan-Gutierrez, M Lanza Microelectronic Engineering 163, 119-133, 2016 | 107 | 2016 |
| Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching N Xiao, MA Villena, B Yuan, S Chen, B Wang, M Eliáš, Y Shi, F Hui, X Jing, ... Advanced Functional Materials 27 (33), 1700384, 2017 | 85 | 2017 |
| A review on the use of graphene as a protective coating against corrosion J Hu, Y Ji, Y Shi, F Hui, H Duan, M Lanza Ann. J. Mater. Sci. Eng 1, 16, 2014 | 83 | 2014 |
| Engineering field effect transistors with 2D semiconducting channels: status and prospects X Jing, Y Illarionov, E Yalon, P Zhou, T Grasser, Y Shi, M Lanza Advanced Functional Materials 30 (18), 1901971, 2020 | 77 | 2020 |
| Advanced Data Encryption using 2D Materials C Wen, X Li, T Zanotti, FM Puglisi, Y Shi, F Saiz, A Antidormi, S Roche, ... Advanced Materials 33 (27), 2100185, 2021 | 75 | 2021 |
| Water oxidation electrocatalysis using ruthenium coordination oligomers adsorbed on multiwalled carbon nanotubes MA Hoque, M Gil-Sepulcre, A de Aguirre, JAAW Elemans, D Moonshiram, ... Nature Chemistry 12 (11), 1060-1066, 2020 | 71 | 2020 |
| Nano-carriers for targeted delivery and biomedical imaging enhancement G Parekh, Y Shi, J Zheng, X Zhang, S Leporatti Therapeutic delivery 9 (6), 451-468, 2018 | 68 | 2018 |
| Graphene–boron nitride–graphene cross-point memristors with three stable resistive states K Zhu, X Liang, B Yuan, MA Villena, C Wen, T Wang, S Chen, F Hui, Y Shi, ... ACS applied materials & interfaces 11 (41), 37999-38005, 2019 | 67 | 2019 |
| 2D h-BN based RRAM devices FM Puglisi, L Larcher, C Pan, N Xiao, Y Shi, F Hui, M Lanza 2016 IEEE International Electron Devices Meeting (IEDM), 34.8. 1-34.8. 4, 2016 | 65 | 2016 |
| Model for multi-filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching devices C Pan, E Miranda, MA Villena, N Xiao, X Jing, X Xie, T Wu, F Hui, Y Shi, ... 2D Materials 4 (2), 025099, 2017 | 64 | 2017 |
| Synthesis of large-area multilayer hexagonal boron nitride sheets on iron substrates and its use in resistive switching devices F Hui, MA Villena, W Fang, AY Lu, J Kong, Y Shi, X Jing, K Zhu, M Lanza 2D Materials 5 (3), 031011, 2018 | 56 | 2018 |
| Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts K Tang, AC Meng, F Hui, Y Shi, T Petach, C Hitzman, AL Koh, ... Nano Letters 17 (7), 4390-4399, 2017 | 56 | 2017 |
| Dielectric breakdown in chemical vapor deposited hexagonal boron nitride L Jiang, Y Shi, F Hui, K Tang, Q Wu, C Pan, X Jing, H Uppal, F Palumbo, ... ACS applied materials & interfaces 9 (45), 39758-39770, 2017 | 52 | 2017 |
| 3D Monolithic Stacked 1T1R cells using Monolayer MoS2 FET and hBN RRAM Fabricated at Low (150°C) Temperature CH Wang, C McClellan, Y Shi, X Zheng, V Chen, M Lanza, E Pop, ... 2018 IEEE International Electron Devices Meeting (IEDM), 22.5. 1-22.5. 4, 2018 | 44 | 2018 |
Eric PopPease-Ye Professor of Electrical Eng., Materials Science, Applied Physics, Stanford and SLACVerified email at stanford.edu
