HS Craft
HS Craft
North Carolina State University, HexaTech
Verified email at hexatechinc.com
Title
Cited by
Cited by
Year
Outdiffusion of La and Al from amorphous in direct contact with Si (001)
P Sivasubramani, MJ Kim, BE Gnade, RM Wallace, LF Edge, DG Schlom, ...
Applied Physics Letters 86 (20), 201901, 2005
882005
Optically pumped UV lasers grown on bulk AlN substrates
T Wunderer, CL Chua, JE Northrup, Z Yang, NM Johnson, M Kneissl, ...
physica status solidi c 9 (3‐4), 822-825, 2012
732012
MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy
HS Craft, JF Ihlefeld, MD Losego, R Collazo, Z Sitar, JP Maria
Applied physics letters 88 (21), 212906, 2006
702006
Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy
HS Craft, R Collazo, MD Losego, S Mita, Z Sitar, JP Maria
Journal of Applied Physics 102 (7), 074104, 2007
392007
Thermal stability of amorphous films on silicon
LF Edge, DG Schlom, S Rivillon, YJ Chabal, MP Agustin, S Stemmer, ...
Applied physics letters 89 (6), 062902, 2006
252006
Low defect density bulk AlN substrates for high performance electronics and optoelectronics
B Raghothamachar, R Dalmau, B Moody, HS Craft, R Schlesser, JQ Xie, ...
Materials Science Forum 717, 1287-1290, 2012
222012
Epitaxial Ba0. 5Sr0. 5TiO3–GaN heterostructures with abrupt interfaces
MD Losego, LF Kourkoutis, S Mita, HS Craft, DA Muller, R Collazo, Z Sitar, ...
Journal of crystal growth 311 (4), 1106-1109, 2009
182009
High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control
JM LeBeau, JS Jur, DJ Lichtenwalner, HS Craft, JP Maria, AI Kingon, ...
Applied Physics Letters 92 (11), 112912, 2008
172008
Surface water reactivity of polycrystalline MgO and CaO films investigated using x-ray photoelectron spectroscopy
HS Craft, R Collazo, MD Losego, Z Sitar, JP Maria
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 26 (6 …, 2008
162008
Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux
MD Losego, HS Craft, EA Paisley, S Mita, R Collazo, Z Sitar, JP Maria
Journal of Materials Research 25 (4), 670-679, 2010
142010
Spectroscopic analysis of the epitaxial CaO (111)–GaN (0002) interface
HS Craft, R Collazo, MD Losego, S Mita, Z Sitar, JP Maria
Applied Physics Letters 92 (8), 082907, 2008
142008
Defect generation mechanisms in PVT-grown AlN single crystal boules
B Raghothamachar, Y Yang, R Dalmau, B Moody, HS Craft, R Schlesser, ...
Materials Science Forum 740, 91-94, 2013
102013
Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN
HS Craft, AL Rice, R Collazo, Z Sitar, JP Maria
Applied Physics Letters 98 (8), 082110, 2011
102011
High quality AlN single crystal substrates for AlGaN-based devices
R Dalmau, HS Craft, J Britt, E Paisley, B Moody, JQ Guo, YJ Ji, ...
Materials Science Forum 924, 923-926, 2018
92018
Molecular beam epitaxy of , , and on Si (111)
HS Craft, R Collazo, Z Sitar, JP Maria
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
92006
Epitaxial PbxZr1−xTiO3 on GaN
EA Paisley, HS Craft, MD Losego, H Lu, A Gruverman, R Collazo, Z Sitar, ...
Journal of Applied Physics 113 (7), 074107, 2013
82013
Barrier layer mechanism engineering in calcium copper titanate thin film capacitors through microstructure control
EA Paisley, MD Losego, SM Aygun, HS Craft, JP Maria
Journal of Applied Physics 104 (11), 114110, 2008
72008
Spectroscopy of oxide-GaN interfaces
HS Craft
32009
Progress and Challenges of AlGaN Schottky Diodes Grown on AlN Substrates
R Dalmau, HS Craft, R Schlesser, S Mita, J Smart, C Hitchcock, G Pandey, ...
ECS Transactions 80 (7), 217, 2017
22017
Single crystal AlN substrates for AlGaN-based UV optoelectronics
R Dalmau, B Moody, HS Craft, R Schlesser
2017 IEEE Photonics Society Summer Topical Meeting Series (SUM), 31-32, 2017
22017
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