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Payal Nautiyal (Ph.D. Student)
Payal Nautiyal (Ph.D. Student)
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Application of workfunction engineering in vertical superjunction devices
P Nautiyal, A Naugarhiya, S Verma
Superlattices and Microstructures 109, 927-935, 2017
172017
Strained superjunction U-MOSFET with insulating layer between alternate pillars
P Nautiyal, A Naugarhiya, S Verma
Materials Research Express 6 (4), 046424, 2019
102019
Workfunction engineered stepped gate SJ UMOS with reduced specific resistance for high speed applications
P Nautiyal, A Naugarhiya, S Verma
Semiconductor Science and Technology 34 (9), 095016, 2019
62019
Electrical characteristic investigation of variation vertical doping superjunction UMOS
P Nautiyal, A Agrawal, S Kumari, H Sahu, A Naugarhiya, S Verma
2019 IEEE 16th India Council International Conference (INDICON), 1-4, 2019
52019
An assessment of step patterned gate oxide superjunction trench mosfet for potential benefits
P Nautiyal, A Naugarhiya, S Verma
Journal of Electronic Materials 48, 8156-8162, 2019
52019
Charge plasma based vvd-sj vdmos employing reversed doping concentration
P Nautiyal, A Naugarhiya, S Verma
2018 Second International Conference on Advances in Electronics, Computers …, 2018
42018
An improved SJ UMOS with modified gate electrode to reduce gate charge
PK Kushwaha, P Nautiyal, A Gupta, A Naugarhiya, S Verma
2019 9th Annual Information Technology, Electromechanical Engineering and …, 2019
32019
Performance evaluation of superjunction UMOS with dual polysilicon gate
P Nautiyal, A Naugarhiya, S Verma
Materials Today: Proceedings 46, 4546-4552, 2021
22021
Capacitive Analysis of Strained Superjunction Vertical Single Diffused MOSFET
O Parmar, P Nautiyal, A Naugarhiya
2021 Devices for Integrated Circuit (DevIC), 139-142, 2021
12021
Design and performance projection of workfunction engineered variable vertical doped superjunction vertical single diffused mos
P Nautiyal, O Parmar, A Naugarhiya, S Verma
2018 IEEE International Conference on Electronics, Computing and …, 2018
12018
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