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Chengjun Shen
Chengjun Shen
Verified email at bristol.ac.uk - Homepage
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Cited by
Year
Prospects and challenges of 4h-sic thyristors in protection of hb-mmc-vsc-hvdc converters
C Shen, S Jahdi, O Alatise, J Ortiz-Gonzalez, A Aithal, P Mellor
IEEE Open Journal of Power Electronics 2, 145-154, 2021
112021
Degradation analysis of planar, symmetrical and asymmetrical trench SiC MOSFETs under repetitive short circuit impulses
R Yu, S Jahdi, P Mellor, L Liu, J Yang, C Shen, O Alatise, J Ortiz-Gonzalez
IEEE Transactions on Power Electronics, 2023
42023
Impact of carriers injection level on transients of discrete and paralleled silicon and 4h-sic npn bjts
C Shen, S Jahdi, J Yang, O Alatise, J Ortiz-Gonzalez, R Wu, P Mellor
IEEE Open Journal of the Industrial Electronics Society 3, 65-80, 2022
42022
Analysis of dynamic transients of high voltage silicon and 4h-sic npn bjts
C Shen, S Jahdi, P Mellor, X Yuan, O Alatise, J Ortiz-Gonzalez
PCIM Europe digital days 2021; International Exhibition and Conference for …, 2021
32021
Investigation of repetitive short circuit stress as a degradation metric in symmetrical and asymmetrical double-trench sic power mosfets
R Yu, S Jahdi, P Mellor, J Yang, C Shen, L Liu, O Alatise, J Ortiz-Gonzalez
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022
22022
Analysis of on-state static and dynamic transients of high voltage 4H-SIC Merged-PiN-Schottky diode
C Shen, S Jahdi, P Mellor, J Yang, E Bashar, O Alatise, J Ortiz-Gonzalez
IET Digital Library, 2022
22022
Unclamped inductive stressing of GaN and SiC Cascode power devices to failure at elevated temperatures
Y Gunaydin, S Jahdi, X Yuan, R Yu, C Shen, SP Munagala, A Hopkins, ...
Microelectronics Reliability 138, 114711, 2022
12022
FEM-based analysis of avalanche ruggedness of high voltage SiC Merged-PiN-Schottky and Junction-Barrier-Schottky diodes
C Shen, R Yu, S Jahdi, P Mellor, SP Munagala, A Hopkins, N Simpson, ...
Microelectronics Reliability 138, 114686, 2022
12022
Electrothermal ruggedness of high voltage sic merged-pin-schottky diodes under inductive avalanche & surge current stress
C Shen, S Jahdi, J Yang, O Alatise, J Ortiz-Gonzalez, P Mellor
2022 IEEE Energy Conversion Congress and Exposition (ECCE), 1-7, 2022
12022
Positive and negative bias temperature instability on crosstalk-stressed symmetrical & asymmetrical double-trench sic mosfets
J Yang, S Jahdi, B Stark, C Shen, O Alatise, J Ortiz-Gonzalez, P Mellor
2022 IEEE Energy Conversion Congress and Exposition (ECCE), 1-7, 2022
12022
Analysis of 1st & 3rd Quadrant Electrothermal Robustness of Symmetrical and Asymmetrical Double- Trench SiC Power MOSFETs Under UIS
M Hosseinzadehlish, S Jahdi, X Yuan, C Shen, Y Gunaydin, I Laird, ...
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022
12022
Investigation of the static performance and avalanche reliability of high voltage 4h-sic merged-pin-schottky diodes
C Shen, S Jahdi, P Mellor, J Yang, E Bashar, J Ortiz-Gonzalez, O Alatise
2022 24th European Conference on Power Electronics and Applications (EPE'22 …, 2022
12022
Electrothermal power cycling of 15 kV SiC PiN diodes
C Shen, S Jahdi, SP Munagala, N Simpson, P Mellor, O Alatise, ...
Microelectronics Reliability 153, 115310, 2024
2024
Analysis of performance of SiC bipolar semiconductor devices for grid-level converters
C Shen
The University of Bristol, 2023
2023
Impact of Temperature and Base Bias Stress on the Static Characteristics of Silicon and 4H-SiC NPN Vertical Power BJTs
M Hosseinzadehlish, S Jahdi, C Shen, X Yuan, I Laird, O Alatise, ...
PCIM Europe 2023; International Exhibition and Conference for Power …, 2023
2023
Experimental Analysis of Short Circuit Robustness of GaN and SiC Cascode Devices
Y Gunaydin, S Jahdi, X Yuan, C Shen, M Hosseinzadelish, R Yu, ...
PCIM Europe 2023; International Exhibition and Conference for Power …, 2023
2023
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
A Borghese, A Aujla-Jones, A Agarwal, A Arvanitopoulos, A Irace, ...
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Articles 1–17