Hong-Yu (Henry) Chen
Hong-Yu (Henry) Chen
GigaDevice Semiconductor Inc.
Verified email at gigadevice.com - Homepage
Title
Cited by
Cited by
Year
Carbon nanotube computer
MM Shulaker, G Hills, N Patil, H Wei, HY Chen, HSP Wong, S Mitra
Nature 501 (7468), 526-530, 2013
9182013
A HfOx Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture
S Yu, HY Chen, B Gao, J Kang, HSP Wong
ACS nano, 2013
2972013
HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector
HY Chen, S Yu, B Gao, P Huang, J Kang, HSP Wong
2012 International Electron Devices Meeting, 20.7. 1-20.7. 4, 2012
2512012
Ultra-Low-Energy Three-Dimensional Oxide-Based Electronic Synapses for Implementation of Robust High-Accuracy Neuromorphic Computation Systems
B Gao, Y Bi, HY Chen, R Liu, P Huang, B Chen, L Liu, X Liu, S Yu, ...
ACS nano 8 (7), 6998-7004, 2014
1512014
Low-Resistance Electrical Contact to Carbon Nanotubes With Graphitic Interfacial Layer
Y Chai, A Hazeghi, K Takei, HY Chen, PCH Chan, A Javey, HSP Wong
Electron Devices, IEEE Transactions on, 1-8, 2012
1292012
Multi-Level Control of Conductive Nano-Filament Evolution in HfO2 ReRAM by Pulse-Train Operations
L Zhao, HY Chen, SC Wu, Z Jiang, S Yu, TH Hou, HSP Wong, Y Nishi
Nanoscale, 2014
1232014
Variability in carbon nanotube transistors: Improving device-to-device consistency
AD Franklin, GS Tulevski, SJ Han, D Shahrjerdi, Q Cao, HY Chen, ...
ACS nano 6 (2), 1109-1115, 2012
1232012
Monitoring Oxygen Movement by Raman Spectroscopy of Resistive Random Access Memory with a Graphene-Inserted Electrode
H Tian, HY Chen, B Gao, S Yu, J Liang, Y Yang, D Xie, J Kang, TL Ren, ...
Nano Letters, 2013
1222013
Cost-Effective, Transfer-Free, Flexible Resistive Random Access Memory Using Laser-Scribed Reduced Graphene Oxide Patterning Technology
H Tian, HY Chen, TL Ren, C Li, QT Xue, MA Mohammad, C Wu, Y Yang, ...
Nano letters 14 (6), 3214-3219, 2014
942014
Metal oxide-resistive memory using graphene-edge electrodes
S Lee, J Sohn, Z Jiang, HY Chen, HSP Wong
Nature communications 6 (1), 1-7, 2015
902015
Linear Increases in Carbon Nanotube Density Through Multiple Transfer Technique
MM Shulaker, H Wei, N Patil, J Provine, HY Chen, HSP Wong, S Mitra
Nano letters, 2011
852011
An ultra-low reset current cross-point phase change memory with carbon nanotube electrodes
J Liang, RGD Jeyasingh, HY Chen, HSP Wong
IEEE Transactions on Electron Devices 59 (4), 1155-1163, 2012
802012
Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon
Y Chai, Y Wu, K Takei, HY Chen, S Yu, PCH Chan, A Javey, HSP Wong
Electron Devices, IEEE Transactions on 58 (11), 3933-3939, 2011
792011
Variation-aware, reliability-emphasized design and optimization of RRAM using SPICE model
H Li, Z Jiang, P Huang, Y Wu, HY Chen, B Gao, XY Liu, JF Kang, ...
2015 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2015
672015
Sensor-to-digital interface built entirely with carbon nanotube FETs
MM Shulaker, J Van Rethy, G Hills, H Wei, HY Chen, G Gielen, ...
IEEE Journal of Solid-State Circuits 49 (1), 190-201, 2013
672013
Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication
HY Chen, S Brivio, CC Chang, J Frascaroli, TH Hou, B Hudec, M Liu, H Lv, ...
Journal of Electroceramics 39 (1), 21-38, 2017
522017
3D vertical RRAM-scaling limit analysis and demonstration of 3D array operation
S Yu, HY Chen, Y Deng, B Gao, Z Jiang, J Kang, HSP Wong
2013 Symposium on VLSI Technology, T158-T159, 2013
522013
Investigation of statistical retention of filamentary analog RRAM for neuromophic computing
M Zhao, H Wu, B Gao, Q Zhang, W Wu, S Wang, Y Xi, D Wu, N Deng, ...
2017 IEEE International Electron Devices Meeting (IEDM), 39.4. 1-39.4. 4, 2017
462017
A 1.4 ľA reset current phase change memory cell with integrated carbon nanotube electrodes for cross-point memory application
J Liang, RGD Jeyasingh, HY Chen, HSP Wong
2011 Symposium on VLSI Technology-Digest of Technical Papers, 100-101, 2011
452011
Design and optimization methodology for 3D RRAM arrays
Y Deng, HY Chen, B Gao, S Yu, SC Wu, L Zhao, B Chen, Z Jiang, X Liu, ...
2013 IEEE International Electron Devices Meeting, 25.7. 1-25.7. 4, 2013
442013
The system can't perform the operation now. Try again later.
Articles 1–20