Mike Krames
Mike Krames
Arkesso, LLC
Verified email at - Homepage
Cited by
Cited by
Status and future of high-power light-emitting diodes for solid-state lighting
MR Krames, OB Shchekin, R Mueller-Mach, GO Mueller, L Zhou, ...
Journal of display technology 3 (2), 160-175, 2007
Auger recombination in InGaN measured by photoluminescence
YC Shen, GO Mueller, S Watanabe, NF Gardner, A Munkholm, ...
Applied Physics Letters 91 (14), 141101, 2007
High-power AlGaInN flip-chip light-emitting diodes
JJ Wierer, DA Steigerwald, MR Krames, JJ O’shea, MJ Ludowise, ...
Applied Physics Letters 78 (22), 3379-3381, 2001
High-power phosphor-converted light-emitting diodes based on III-nitrides
R Mueller-Mach, GO Mueller, MR Krames, T Trottier
IEEE Journal of Selected Topics in Quantum Electronics 8 (2), 339-345, 2002
Highly efficient all‐nitride phosphor‐converted white light emitting diode
R Mueller‐Mach, G Mueller, MR Krames, HA Höppe, F Stadler, W Schnick, ...
physica status solidi (a) 202 (9), 1727-1732, 2005
High-power truncated-inverted-pyramid light-emitting diodes exhibiting % external quantum efficiency
MR Krames, M Ochiai-Holcomb, GE Höfler, C Carter-Coman, EI Chen, ...
Applied physics letters 75 (16), 2365-2367, 1999
Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above
NF Gardner, GO Müller, YC Shen, G Chen, S Watanabe, W Götz, ...
Applied Physics Letters 91 (24), 243506, 2007
InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
JJ Wierer, MR Krames, JE Epler, NF Gardner, MG Craford, JR Wendt, ...
Applied Physics Letters 84 (19), 3885-3887, 2004
Ordered interface texturing for a light emitting device
MR Krames, FA Kish Jr
US Patent 5,779,924, 1998
Research challenges to ultra‐efficient inorganic solid‐state lighting
JM Phillips, ME Coltrin, MH Crawford, AJ Fischer, MR Krames, ...
Laser & Photonics Reviews 1 (4), 307-333, 2007
Luminescent ceramic for a light emitting device
GO Mueller, RB Mueller-Mach, MR Krames, PJ Schmidt, HH Bechtel, ...
US Patent 7,361,938, 2008
Phosphor-converted light emitting device
WD Collins III, MR Krames, GJ Verhoeckx, NJM Van Leth
US Patent 6,642,652, 2003
High performance thin-film flip-chip InGaN–GaN light-emitting diodes
OB Shchekin, JE Epler, TA Trottier, T Margalith, DA Steigerwald, ...
Applied Physics Letters 89 (7), 071109, 2006
History of gallium–nitride-based light-emitting diodes for illumination
S Nakamura, MR Krames
Proceedings of the IEEE 101 (10), 2211-2220, 2013
Carrier distribution in multiple quantum well light-emitting diodes
A David, MJ Grundmann, JF Kaeding, NF Gardner, TG Mihopoulos, ...
Applied Physics Letters 92 (5), 053502, 2008
III-Phospide and III-Arsenide flip chip light-emitting devices
MD Camras, DA Steigerwald, FM Steranka, MJ Ludowise, PS Martin, ...
US Patent 6,784,463, 2004
Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor
WD Collins III, MR Krames, GJ Verhoeckx, NJM van Leth
US Patent 6,576,488, 2003
History, development, and applications of high-brightness visible light-emitting diodes
RD Dupuis, MR Krames
Journal of lightwave technology 26 (9), 1154-1171, 2008
High power LEDs–Technology status and market applications
FM Steranka, J Bhat, D Collins, L Cook, MG Craford, R Fletcher, ...
physica status solidi (a) 194 (2), 380-388, 2002
Polarized semiconductor light emitting device
MH Keuper, MR Krames, GO Mueller
US Patent 7,408,201, 2008
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