Dielectric, elastic, piezoelectric, electro-optic, and elasto-optic tensors of crystals M Zgonik, P Bernasconi, M Duelli, R Schlesser, P Günter, MH Garrett, ...
Physical review B 50 (9), 5941, 1994
632 1994 Materials constants of KNbO3 relevant for electro‐ and acousto‐optics M Zgonik, R Schlesser, I Biaggio, E Voit, J Tscherry, P Günter
Journal of applied physics 74 (2), 1287-1297, 1993
373 1993 Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates R Dalmau, B Moody, R Schlesser, S Mita, J Xie, M Feneberg, B Neuschl, ...
Journal of The Electrochemical Society 158 (5), H530, 2011
171 2011 Seeded growth of AlN bulk single crystals by sublimation R Schlesser, R Dalmau, Z Sitar
Journal of crystal growth 241 (4), 416-420, 2002
164 2002 Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy T Kinoshita, K Hironaka, T Obata, T Nagashima, R Dalmau, R Schlesser, ...
Applied Physics Express 5 (12), 122101, 2012
151 2012 Preparation of a freestanding AlN substrate from a thick AlN layer grown by hydride vapor phase epitaxy on a bulk AlN substrate prepared by physical vapor transport Y Kumagai, Y Kubota, T Nagashima, T Kinoshita, R Dalmau, R Schlesser, ...
Applied Physics Express 5 (5), 055504, 2012
149 2012 Growth of AlN single crystalline boules ZG Herro, D Zhuang, R Schlesser, Z Sitar
Journal of Crystal Growth 312 (18), 2519-2521, 2010
137 2010 Electro-optic effects in molecular crystals C Bosshard, K Sutter, R Schlesser, P Günter
JOSA B 10 (5), 867-885, 1993
136 1993 Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures J Xie, S Mita, Z Bryan, W Guo, L Hussey, B Moody, R Schlesser, R Kirste, ...
Applied Physics Letters 102 (17), 2013
134 2013 The growth and optical properties of large, high-quality AlN single crystals M Strassburg, J Senawiratne, N Dietz, U Haboeck, A Hoffmann, V Noveski, ...
Journal of applied physics 96 (10), 5870-5876, 2004
131 2004 Growth of Ga-and N-polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers R Collazo, S Mita, A Aleksov, R Schlesser, Z Sitar
Journal of crystal growth 287 (2), 586-590, 2006
113 2006 Band-edge exciton states in AlN single crystals and epitaxial layers L Chen, BJ Skromme, RF Dalmau, R Schlesser, Z Sitar, C Chen, W Sun, ...
Applied physics letters 85 (19), 4334-4336, 2004
107 2004 Seeded growth of AlN on N-and Al-polar< 0001> AlN seeds by physical vapor transport ZG Herro, D Zhuang, R Schlesser, R Collazo, Z Sitar
Journal of crystal growth 286 (2), 205-208, 2006
97 2006 Optical and Nonlinear Optical Properties of 4'-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST) crystals G Knopfle
Nonlinear Opt. 9, 143-149, 1995
96 1995 Growth of bulk AlN crystals by vaporization of aluminum in a nitrogen atmosphere R Schlesser, Z Sitar
Journal of crystal growth 234 (2-3), 349-353, 2002
95 2002 Optically pumped UV lasers grown on bulk AlN substrates T Wunderer, CL Chua, JE Northrup, Z Yang, NM Johnson, M Kneissl, ...
physica status solidi c 9 (3‐4), 822-825, 2012
94 2012 Seeded growth of AlN single crystals by physical vapor transport D Zhuang, ZG Herro, R Schlesser, Z Sitar
Journal of crystal growth 287 (2), 372-375, 2006
94 2006 High-temperature electromechanical characterization of AlN single crystals T Kim, J Kim, R Dalmau, R Schlesser, E Preble, X Jiang
IEEE transactions on Ultrasonics, Ferroelectrics, and Frequency control 62 …, 2015
84 2015 Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy BL Ward, OH Nam, JD Hartman, SL English, BL McCarson, R Schlesser, ...
Journal of applied physics 84 (9), 5238-5242, 1998
83 1998 Mass transfer in AlN crystal growth at high temperatures V Noveski, R Schlesser, S Mahajan, S Beaudoin, Z Sitar
Journal of crystal growth 264 (1-3), 369-378, 2004
81 2004