Pedro Cartujo Cassinello
Pedro Cartujo Cassinello
Profesor de Electrónica, Universidad de Granada
Dirección de correo verificada de ugr.es
TítuloCitado porAño
Surface roughness at the interfaces in fully depleted silicon-on-insulator inversion layers
F Gamiz, JB Roldan, JA Lopez-Villanueva, P Cartujo-Cassinello, ...
Journal of Applied Physics 86 (12), 6854-6863, 1999
1351999
Effects of the inversion-layer centroid on the performance of double-gate MOSFETs
JA López-Villanueva, P Cartujo-Cassinello, F Gámiz, J Banqueri, ...
IEEE Transactions on Electron Devices 47 (1), 141-146, 2000
922000
Effects of the inversion layer centroid on MOSFET behavior
JA López-Villanueva, P Cartujo-Casinello, J Banqueri, F Gamiz, ...
IEEE Transactions on Electron Devices 44 (11), 1915-1922, 1997
851997
Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates
F Gamiz, P Cartujo-Cassinello, JB Roldán, F Jiménez-Molinos
Journal of Applied Physics 92 (1), 288-295, 2002
812002
Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers
F Gamiz, JB Roldán, P Cartujo-Cassinello, JA López-Villanueva, ...
Journal of Applied Physics 89 (3), 1764-1770, 2001
762001
Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers
F Gamiz, JB Roldán, P Cartujo-Cassinello, JE Carceller, ...
Journal of applied physics 86 (11), 6269-6275, 1999
571999
Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration
F Gamiz, JB Roldan, A Godoy, P Cartujo-Cassinello, JE Carceller
Journal of applied physics 94 (9), 5732-5741, 2003
372003
Coulomb scattering model for ultrathin silicon-on-insulator inversion layers
F Gamiz, F Jimenez-Molinos, JB Roldan, P Cartujo-Cassinello
Applied physics letters 80 (20), 3835-3837, 2002
302002
Strained-Si on Si/sub 1-x/Ge/sub x/MOSFET mobility model
JB Roldan, F Gámiz, P Cartujo-Cassinello, P Cartujo, JE Carceller, ...
IEEE Transactions on Electron Devices 50 (5), 1408-1411, 2003
272003
Monte Carlo simulation of electron transport in silicon-on-insulator devices
F Gámiz, JB Roldan, JA Lopez-Villanueva, P Cartujo-Cassinello, ...
Proc. 10th Int. Symp. SOI Technology Devices, 157-168, 2001
202001
Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects
JB Roldan, F Gamiz, JA Lopez-Villanueva, P Cartujo-Cassinello
IEEE Electron Device Letters 21 (5), 239-241, 2000
192000
Electron transport in silicon-on-insulator devices
F Gámiz, JB Roldán, JA López-Villanueva, P Cartujo-Cassinello, ...
Solid-State Electronics 45 (4), 613-620, 2001
102001
Remote surface roughness scattering in ultrathin-oxide MOSFETs
F Gámiz, A Godoy, F Jimenez-Molinos, P Cartujo-Cassinello, JB Roldan
ESSDERC'03. 33rd Conference on European Solid-State Device Research, 2003 …, 2003
92003
Monte Carlo simulation of electron mobility in silicon-on-insulator structures
F Gamiz, JB Roldan, JA Lopez-Villanueva, P Cartujo-Cassinello, ...
Solid-State Electronics 46 (11), 1715-1721, 2002
72002
Double gate silicon-on-insulator transistors: n/sup+/-n/sup+/gate versus n/sup+/-p/sup+/gate configuration
F Gamiz, JB Roldan, A Godoy, F Jimenez-Molinos
Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat …, 2004
52004
Influence of confined acoustic phonons on the electron mobility in ultrathin silicon-on-insulator layers
F Gamiz, P Cartujo-Cassinello, J Roldan, C Sampedro, A Godoy
Proc. Intern. Symp. on Silicon-on-Insulator Tech. and Devices, 39-44, 2005
42005
Image and exchange-correlation effects in double gate silicon-on-insulator transistors
F Gámiz, P Cartujo-Cassinello, F Jiménez-Molinos, JE Carceller, ...
Microelectronic engineering 72 (1-4), 374-378, 2004
42004
Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers
F Gámiz, P Cartujo-Cassinello, F Jiménez-Molinos, JE Carceller, ...
Applied physics letters 83 (15), 3120-3122, 2003
42003
Simulación y modelado de transistores MOS de doble puerta
P Cartujo Cassinello
Granada, 2000
12000
Experimental determination of the effective mobility in NMOSFETs: a comparative study
J Banqueri, JA López-Villanueva, P Cartujo-Cassinello, S Rodrı́guez, ...
Solid-State Electronics 43 (4), 701-707, 1999
11999
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Artículos 1–20