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Vishwas Jindal
Vishwas Jindal
Institut National des Sciences Appliquées, LPCNO Toulouse
Dirección de correo verificada de insa-toulouse.fr
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Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics
A Varghese, D Saha, K Thakar, V Jindal, S Ghosh, NV Medhekar, ...
Nano letters 20 (3), 1707-1717, 2020
1632020
Anomalous behavior of the excited state of the exciton in bulk
V Jindal, S Bhuyan, T Deilmann, S Ghosh
Physical Review B 97 (4), 045211, 2018
192018
Interlayer and excited-state exciton transitions in bulk
V Jindal, D Jana, T Deilmann, S Ghosh
Physical Review B 102 (23), 235204, 2020
102020
One-dimensional behavior of imidazolium lead iodide
C Seth, D Jana, V Jindal, D Khushalani, S Ghosh
The Journal of Physical Chemistry C 123 (26), 16449-16455, 2019
102019
Setup for photolithography on microscopic flakes of 2D materials by combining simple-geometry mask projection with writing
V Jindal, V Sugunakar, S Ghosh
Review of Scientific Instruments 93 (2), 2022
52022
Electroreflectance spectroscopy of few-layer MoS2: Issues related to A1s exciton subspecies, exciton binding energy, and inter-layer exciton
V Jindal, D Jana, S Ghosh
Journal of Applied Physics 132 (21), 2022
42022
Signatures of self-trapping of trions in monolayer MoS2
S Bhuyan, V Jindal, D Jana, S Ghosh
Journal of Physics D: Applied Physics 51 (43), 435102, 2018
32018
Landé Factor of Excitons from Circularly Polarized Low-Field Magnetomodulated Reflectance Spectroscopy: Application to Bulk -
D Das, V Jindal, V Sugunakar, S Ghosh
Physical Review Applied 19 (6), 064073, 2023
12023
Unraveling the excitonic states in bulk via their giant Stark shift
V Jindal, T Deilmann, S Ghosh
Physical Review B 107 (24), L241201, 2023
12023
Excitons in transition metal dichalcogenide semiconductors: excited states and electric field effects
V Jindal
2022
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–10