nm InAs Channel MOSFETs Exhibiting GHz and GHzJ Wu, Y Fang, B Markman, HY Tseng, MJW Rodwell
IEEE Electron Device Letters 39 (4), 472-475, 2018
31 2018 Horizontal heterojunction integration via template-assisted selective epitaxy ST Šuran Brunelli, A Goswami, B Markman, HY Tseng, M Rodwell, ...
Crystal Growth & Design 19 (12), 7030-7035, 2019
18 2019 Selective and confined epitaxial growth development for novel nano-scale electronic and photonic device structures ST Šuran Brunelli, B Markman, A Goswami, HY Tseng, S Choi, ...
Journal of Applied Physics 126 (1), 2019
15 2019 Doping profile engineered triple heterojunction TFETs with 12-nm body thickness CY Chen, HY Tseng, H Ilatikhameneh, TA Ameen, G Klimeck, MJ Rodwell, ...
IEEE Transactions on Electron Devices 68 (6), 3104-3111, 2021
12 2021 Mg incorporation in GaN grown by plasma-assisted molecular beam epitaxy at high temperatures WC Yang, PY Lee, HY Tseng, CW Lin, YT Tseng, KY Cheng
Journal of Crystal Growth 439, 87-92, 2016
12 2016 Controlling facets and defects of InP nanostructures in confined epitaxial lateral overgrowth A Goswami, ST Šuran Brunelli, B Markman, AA Taylor, HY Tseng, ...
Physical Review Materials 4 (12), 123403, 2020
8 2020 Transistors for 100-300GHz Wireless M Rodwell, B Markman, Y Fang, L Whitaker, HY Tseng, ASH Ahmed
ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021
3 2021 GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy HY Tseng, WC Yang, PY Lee, CW Lin, KY Cheng, KC Hsieh, KY Cheng, ...
Applied Physics Letters 109 (8), 2016
3 2016 InP/lnGaAs DHBT with Self-aligned MOCVD Regrown p-GaAs Extrinsic Base Exhibiting Base Contact ResistivityY Fang, HY Tseng, MJW Rodwell
2019 Device Research Conference (DRC), 179-180, 2019
2 2019 Atomic layer deposition of TiN/Ru gate in InP MOSFETs HY Tseng, Y Fang, WJ Mitchell, AA Taylor, MJW Rodwell
Applied Physics Letters 119 (12), 2021
1 2021 Triple-heterojunction (3-HJ) TFETs Design and Fabrication for Low Power Logic HY Tseng
University of California, Santa Barbara, 2021
1 2021 InP MOSFETs exhibiting record 70 mV/DEC subthreshold swing HY Tseng, Y Fang, S Zhong, MJW Rodwell
2019 Device Research Conference (DRC), 183-184, 2019
1 2019 Effects of growth parameters on faceting and defects in confined epitaxial lateral overgrowth A Goswami, ST Šuran Brunelli, B Markman, D Pennachio, HY Tseng, ...
Bulletin of the American Physical Society 65, 2020
2020 PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0058825 HY Tseng, Y Fang, WJ Mitchell, AA Taylor, MJW Rodwell