| Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues P Noé, C Vallée, F Hippert, F Fillot, JY Raty Semiconductor Science and Technology 33 (1), 013002, 2017 | 258 | 2017 |
| Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed P Noé, A Verdy, F d’Acapito, JB Dory, M Bernard, G Navarro, JB Jager, ... Science advances 6 (9), eaay2830, 2020 | 100 | 2020 |
| Impact of interfaces on scenario of crystallization of phase change materials P Noé, C Sabbione, N Bernier, N Castellani, F Fillot, F Hippert Acta Materialia 110, 142-148, 2016 | 71 | 2016 |
| Spin injection in silicon at zero magnetic field L Grenet, M Jamet, P Noé, V Calvo, JM Hartmann, LE Nistor, B Rodmacq, ... Applied Physics Letters 94 (3), 2009 | 71 | 2009 |
| Trade-off between SET and data retention performance thanks to innovative materials for phase-change memory G Navarro, M Coué, A Kiouseloglou, P Noé, F Fillot, V Delaye, A Persico, ... 2013 IEEE International Electron Devices Meeting, 21.5. 1-21.5. 4, 2013 | 68 | 2013 |
| Surface recombination velocity measurements of efficiently passivated gold-catalyzed silicon nanowires by a new optical method O Demichel, V Calvo, A Besson, P Noé, B Salem, N Pauc, F Oehler, ... Nano letters 10 (7), 2323-2329, 2010 | 66 | 2010 |
| Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2Te3 Superlattices Used in Interfacial Phase‐Change Memory (iPCM) Devices P Kowalczyk, F Hippert, N Bernier, C Mocuta, C Sabbione, ... Small 14 (24), 1704514, 2018 | 52 | 2018 |
| In situ observation of the impact of surface oxidation on the crystallization mechanism of GeTe phase-change thin films by scanning transmission electron microscopy R Berthier, N Bernier, D Cooper, C Sabbione, F Hippert, P Noé Journal of Applied Physics 122 (11), 2017 | 44 | 2017 |
| Operation fundamentals in 12Mb Phase Change Memory based on innovative Ge-rich GST materials featuring high reliability performance V Sousa, G Navarro, N Castellani, M Coue, O Cueto, C Sabbione, P Noe, ... 2015 Symposium on VLSI Technology (VLSI Technology), T98-T99, 2015 | 43 | 2015 |
| Structural change with the resistance drift phenomenon in amorphous GeTe phase change materials’ thin films P Noé, C Sabbione, N Castellani, G Veux, G Navarro, V Sousa, F Hippert, ... Journal of Physics D: Applied Physics 49 (3), 035305, 2015 | 40 | 2015 |
| Improved electrical performance thanks to Sb and N doping in Se-rich GeSe-based OTS selector devices A Verdy, G Navarro, V Sousa, P Noe, M Bernard, F Fillot, G Bourgeois, ... 2017 IEEE International Memory Workshop (IMW), 1-4, 2017 | 39 | 2017 |
| Innovative PCM+ OTS device with high sub-threshold non-linearity for non-switching reading operations and higher endurance performance G Navarro, A Verdy, N Castellani, G Bourgeois, V Sousa, G Molas, ... 2017 Symposium on VLSI Technology, T94-T95, 2017 | 37 | 2017 |
| Recombination dynamics of spatially confined electron− hole system in luminescent gold catalyzed silicon nanowires O Demichel, V Calvo, N Pauc, A Besson, P Noé, F Oehler, P Gentile, ... Nano letters 9 (7), 2575-2578, 2009 | 35 | 2009 |
| High-Q silica microcavities on a chip: From microtoroid to microsphere JB Jager, V Calvo, E Delamadeleine, E Hadji, P Noé, T Ricart, D Bucci, ... Applied Physics Letters 99 (18), 2011 | 34 | 2011 |
| Lowering the reset current and power consumption of phase-change memories with carbon-doped Ge2Sb2Te5 Q Hubert, C Jahan, A Toffoli, G Navarro, S Chandrashekar, P Noe, ... 2012 4th IEEE International Memory Workshop, 1-4, 2012 | 32 | 2012 |
| Enhancement of the photoluminescence of silicon oxide defect states by combining silicon oxide with silicon nanowires P Noe, J Guignard, P Gentile, E Delamadeleine, V Calvo, P Ferret, ... Journal of applied physics 102 (1), 2007 | 32 | 2007 |
| Vibrational properties and stabilization mechanism of the amorphous phase of doped GeTe JY Raty, P Noé, G Ghezzi, S Maîtrejean, C Bichara, F Hippert Physical Review B 88 (1), 014203, 2013 | 31 | 2013 |
| Ge–Sb–S–Se–Te amorphous chalcogenide thin films towards on-chip nonlinear photonic devices JB Dory, C Castro-Chavarria, A Verdy, JB Jager, M Bernard, C Sabbione, ... Scientific reports 10 (1), 11894, 2020 | 30 | 2020 |
| Efficient coupling of Er-doped silicon-rich oxide to microdisk whispering gallery modes J Verbert, F Mazen, T Charvolin, E Picard, V Calvo, P Noé, JM Gérard, ... Applied Physics Letters 86 (11), 2005 | 27 | 2005 |
| Thermal conductivity of amorphous and crystalline GeTe thin film at high temperature: Experimental and theoretical study K Ghosh, A Kusiak, P Noé, MC Cyrille, JL Battaglia Physical Review B 101 (21), 214305, 2020 | 25 | 2020 |
