| III-nitride semiconductors for intersubband optoelectronics: a review M Beeler, E Trichas, E Monroy Semiconductor Science and Technology 28 (7), 074022, 2013 | 218 | 2013 |
| Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band CB Lim, A Ajay, C Bougerol, B Haas, J Schörmann, M Beeler, ... Nanotechnology 26 (43), 435201, 2015 | 46 | 2015 |
| Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructures M Beeler, P Hille, J Schormann, J Teubert, M De La Mata, J Arbiol, ... Nano letters 14 (3), 1665-1673, 2014 | 46 | 2014 |
| Intersubband transitions in nonpolar GaN/Al (Ga) N heterostructures in the short-and mid-wavelength infrared regions CB Lim, M Beeler, A Ajay, J Lähnemann, E Bellet-Amalric, C Bougerol, ... Journal of Applied Physics 118 (1), 2015 | 41 | 2015 |
| Terahertz absorbing AlGaN/GaN multi-quantum-wells: Demonstration of a robust 4-layer design M Beeler, C Bougerol, E Bellet-Amalric, E Monroy Applied Physics Letters 103 (9), 2013 | 37 | 2013 |
| Pseudo-square AlGaN/GaN quantum wells for terahertz absorption M Beeler, C Bougerol, E Bellet-Amalric, E Monroy Applied Physics Letters 105 (13), 2014 | 36 | 2014 |
| Long-lived excitons in GaN/AlN nanowire heterostructures M Beeler, CB Lim, P Hille, J Bleuse, J Schörmann, M De La Mata, J Arbiol, ... Physical Review B 91 (20), 205440, 2015 | 35 | 2015 |
| Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors S Joglekar, M Azize, M Beeler, E Monroy, T Palacios Applied Physics Letters 109 (4), 2016 | 31 | 2016 |
| Correlation of optical and structural properties of GaN/AlN multi-quantum wells—Ab initio and experimental study A Kaminska, P Strak, J Borysiuk, K Sobczak, JZ Domagala, M Beeler, ... Journal of Applied Physics 119 (1), 2016 | 30 | 2016 |
| Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells H Machhadani, M Beeler, S Sakr, E Warde, Y Kotsar, M Tchernycheva, ... Journal of Applied Physics 113 (14), 2013 | 29 | 2013 |
| Ab initio and experimental studies of polarization and polarization related fields in nitrides and nitride structures P Strak, P Kempisty, K Sakowski, A Kaminska, D Jankowski, KP Korona, ... AIP Advances 7 (1), 2017 | 26 | 2017 |
| Composition analysis of III-nitrides at the nanometer scale: Comparison of energy dispersive X-ray spectroscopy and atom probe tomography B Bonef, M Lopez-Haro, L Amichi, M Beeler, A Grenier, E Robin, ... Nanoscale Research Letters 11, 1-6, 2016 | 19 | 2016 |
| Short-wavelength, mid-and far-infrared intersubband absorption in nonpolar GaN/Al (Ga) N heterostructures CB Lim, M Beeler, A Ajay, J Lähnemann, E Bellet-Amalric, C Bougerol, ... Japanese Journal of Applied Physics 55 (5S), 05FG05, 2016 | 18 | 2016 |
| THz intersubband transitions in AlGaN/GaN multi‐quantum‐wells M Beeler, C Bougerol, E Bellet‐Amalaric, E Monroy physica status solidi (a) 211 (4), 761-764, 2014 | 16 | 2014 |
| High pressure and time resolved studies of optical properties of n-type doped GaN/AlN multi-quantum wells: Experimental and theoretical analysis A Kaminska, D Jankowski, P Strak, KP Korona, M Beeler, K Sakowski, ... Journal of Applied Physics 120 (9), 2016 | 15 | 2016 |
| Effect of Al incorporation in nonpolar m‐plane GaN/AlGaN multi‐quantum‐wells using plasma‐assisted molecular‐beam epitaxy CB Lim, A Ajay, C Bougerol, E Bellet‐Amalric, J Schörmann, M Beeler, ... physica status solidi (a) 214 (9), 1600849, 2017 | 13 | 2017 |
| III-nitride semiconductors: new infrared intersubband technologies M Beeler, E Monroy Gallium nitride (GaN): physics, devices, and technology, 2015 | 3 | 2015 |
| Intersubband transitions in the THz using GaN quantum wells (Conference Presentation) CB Lim, A Ajay, C Bougerol, J Schörmann, DA Browne, M Beeler, ... Gallium Nitride Materials and Devices XII 10104, 49-49, 2017 | | 2017 |
| Quantum engineering of III-nitride nanostructures for infrared optoelectronics M Beeler Université Grenoble Alpes, 2015 | | 2015 |
| Ingénierie quantique de nanostructures à base de semi-conducteurs III-nitrures pour l'optoélectronique infrarouge M Beeler Université Grenoble Alpes (ComUE), 2015 | | 2015 |
Eva MonroyCEA, IRIG, PHELIQS-NPSC, Grenoble, FranceVerified email at cea.fr
