A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As … É O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ...
Journal of Applied Physics 109 (2), 2011
171 2011 Temperature and frequency dependent electrical characterization of HfO2/InxGa1− xAs interfaces using capacitance-voltage and conductance methods É O’Connor, S Monaghan, RD Long, A O’Mahony, IM Povey, K Cherkaoui, ...
Applied Physics Letters 94 (10), 2009
132 2009 Poly (9, 9-dioctylfluorene) nanowires with pronounced β-phase morphology: synthesis, characterization, and optical properties D O'Carroll, D Iacopino, A O'Riordan, P Lovera, É O'Connor, GA O'Brien, ...
Advanced Materials 20 (1), 42-48, 2008
128 2008 Low-Loss BaTiO3 –Si Waveguides for Nonlinear Integrated Photonics F Eltes, D Caimi, F Fallegger, M Sousa, E O’Connor, MD Rossell, ...
Acs Photonics 3 (9), 1698-1703, 2016
118 2016 Near-infrared electroluminescent devices based on colloidal HgTe quantum dot arrays É O’Connor, A O’Riordan, H Doyle, S Moynihan, A Cuddihy, G Redmond
Applied physics letters 86 (20), 2005
75 2005 In situ H2S passivation of In0. 53Ga0. 47As∕ InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric E O’Connor, RD Long, K Cherkaoui, KK Thomas, F Chalvet, IM Povey, ...
Applied Physics Letters 92 (2), 2008
72 2008 Near infrared electroluminescence from neodymium complex–doped polymer light emitting diodes A O'Riordan, E O'Connor, S Moynihan, P Nockemann, P Fias, ...
Thin Solid Films 497 (1-2), 299-303, 2006
68 2006 An investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors J Lin, YY Gomeniuk, S Monaghan, IM Povey, K Cherkaoui, É O'Connor, ...
Journal of Applied Physics 114 (14), 2013
66 2013 Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0. 53Ga0. 47As/InP capacitors following an optimized (NH4) 2S treatment É O’Connor, S Monaghan, K Cherkaoui, IM Povey, PK Hurley
Applied Physics Letters 99 (21), 2011
65 2011 Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0. 53Ga0. 47As capacitors with and without an Al2O3 interface control layer A O’Mahony, S Monaghan, G Provenzano, IM Povey, MG Nolan, ...
Applied Physics Letters 97 (5), 2010
64 2010 Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric V Djara, K Cherkaoui, M Schmidt, S Monaghan, É O'Connor, I Povey, ...
Institute of Electrical and Electronics Engineers (IEEE), 2012
63 2012 Interface Defects in HfO2, LaSiO x, and Gd2O3 High-k/Metal–Gate Structures on Silicon PK Hurley, K Cherkaoui, E O’connor, MC Lemme, HDB Gottlob, ...
Journal of The Electrochemical Society 155 (2), G13, 2007
62 2007 Stabilization of ferroelectric HfxZr1− xO2 films using a millisecond flash lamp annealing technique É O’Connor, M Halter, F Eltes, M Sousa, A Kellock, S Abel, J Fompeyrine
Apl Materials 6 (12), 2018
60 2018 The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System PK Hurley, É O'Connor, V Djara, S Monaghan, IM Povey, RD Long, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 429-443, 2013
56 2013 Narrow bandwidth red electroluminescence from solution-processed lanthanide-doped polymer thin films A O'Riordan, E O'Connor, S Moynihan, X Llinares, R Van Deun, P Fias, ...
Thin Solid Films 491 (1-2), 264-269, 2005
56 2005 Advanced 3D monolithic hybrid CMOS with sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI fin pFETs V Deshpande, V Djara, E O'Connor, P Hashemi, K Balakrishnan, M Sousa, ...
2015 IEEE International Electron Devices Meeting (IEDM), 8.8. 1-8.8. 4, 2015
48 2015 Electrical analysis of three-stage passivated In0. 53Ga0. 47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer S Monaghan, A O’Mahony, K Cherkaoui, É O’Connor, IM Povey, ...
Journal of Vacuum Science & Technology B 29 (1), 2011
36 2011 Growth and characterisation of thin MgO layers on Si (100) surfaces P Casey, G Hughes, E O'connor, RD Long, PK Hurley
Journal of Physics: Conference Series 100 (4), 042046, 2008
36 2008 Energy barriers at interfaces of (100) GaAs with atomic layer deposited Al2O3 and HfO2 VV Afanas’ev, M Badylevich, A Stesmans, G Brammertz, A Delabie, ...
Applied Physics Letters 93 (21), 2008
34 2008 Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0. 53Ga0. 47As surfaces by atomic layer deposition RD Long, É O’Connor, SB Newcomb, S Monaghan, K Cherkaoui, ...
Journal of Applied Physics 106 (8), 2009
33 2009