Properties of amorphous hydrogenated silicon, with special emphasis on preparation by sputtering W Paul, DA Anderson Solar Energy Materials 5 (3), 229-316, 1981 | 330* | 1981 |
Luminescence associated with stacking faults in GaN J Lähnemann, U Jahn, O Brandt, T Flissikowski, P Dogan, HT Grahn Journal of Physics D: Applied Physics 47 (42), 423001, 2014 | 104 | 2014 |
Direct experimental determination of the spontaneous polarization of GaN J Lähnemann, O Brandt, U Jahn, C Pfüller, C Roder, P Dogan, F Grosse, ... Physical Review B 86 (8), 081302, 2012 | 104 | 2012 |
Macro-and micro-strain in GaN nanowires on Si (111) B Jenichen, O Brandt, C Pfueller, P Dogan, M Knelangen, A Trampert Nanotechnology 22 (29), 295714, 2011 | 73 | 2011 |
Influence of hydrogen plasma on the defect passivation of polycrystalline Si thin film solar cells B Gorka, B Rau, P Dogan, C Becker, F Ruske, S Gall, B Rech Plasma Processes and Polymers 6 (S1), S36-S40, 2009 | 51 | 2009 |
Access regulation and the transition from copper to fiber networks in telecoms M Bourreau, C Cambini, P Doğan Journal of Regulatory Economics 45 (3), 233-258, 2014 | 46 | 2014 |
Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder KK Sabelfeld, VM Kaganer, F Limbach, P Dogan, O Brandt, L Geelhaar, ... Applied Physics Letters 103 (13), 133105, 2013 | 46 | 2013 |
Nucleation, growth, and bundling of GaN nanowires in molecular beam epitaxy: Disentangling the origin of nanowire coalescence VM Kaganer, S Fernández-Garrido, P Dogan, KK Sabelfeld, O Brandt Nano letters 16 (6), 3717-3725, 2016 | 42 | 2016 |
Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glass B Rau, T Weber, B Gorka, P Dogan, F Fenske, KY Lee, S Gall, B Rech Materials Science and Engineering: B 159, 329-332, 2009 | 40 | 2009 |
Solid-phase crystallization of amorphous silicon on ZnO: Al for thin-film solar cells C Becker, E Conrad, P Dogan, F Fenske, B Gorka, T Hänel, KY Lee, ... Solar Energy Materials and Solar Cells 93 (6-7), 855-858, 2009 | 39 | 2009 |
Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles VM Kaganer, B Jenichen, O Brandt, S Fernández-Garrido, P Dogan, ... Physical Review B 86 (11), 115325, 2012 | 32 | 2012 |
Formation of high-quality GaN microcrystals by pendeoepitaxial overgrowth of GaN nanowires on Si (111) by molecular beam epitaxy P Dogan, O Brandt, C Pfüller, J Lähnemann, U Jahn, C Roder, ... Crystal growth & design 11 (10), 4257-4260, 2011 | 31 | 2011 |
Structural and electrical properties of epitaxial Si layers prepared by E-beam evaporation P Dogan, E Rudigier, F Fenske, KY Lee, B Gorka, B Rau, E Conrad, ... Thin Solid Films 516 (20), 6989-6993, 2008 | 31 | 2008 |
22nd European Photovoltaic Solar Energy Conference K Wasmer, A Bidiville, J Michler, C Ballif, M Van der Meer, P Nasch Milan, Italy, 2007 | 31 | 2007 |
GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si (1 1 1) by molecular beam epitaxy P Dogan, O Brandt, C Pfüller, AK Bluhm, L Geelhaar, H Riechert Journal of crystal growth 323 (1), 418-421, 2011 | 29 | 2011 |
CSG minimodules using electron-beam evaporated silicon R Egan, M Keevers, U Schubert, T Young, R Evans, S Partlin, M Wolf, ... 24th European Photovoltaic Solar Energy Conference, 2279-2285, 2009 | 29 | 2009 |
Low-temperature epitaxy of silicon by electron beam evaporation B Gorka, P Dogan, I Sieber, F Fenske, S Gall Thin Solid Films 515 (19), 7643-7646, 2007 | 20 | 2007 |
The political economy of liberalization of fixed line telecommunications in Turkey I Atiyas, P Dogan Mossavar-Rahmani Center for Business and Government, Harvard Kennedy School …, 2009 | 12 | 2009 |
GaN/Fe core/shell nanowires for nonvolatile spintronics on Si C Gao, R Farshchi, C Roder, P Dogan, O Brandt Physical Review B 83 (24), 245323, 2011 | 11 | 2011 |
Level of access and infrastructure investment in network industries M Bourreau, P Doğan, R Lestage Journal of Regulatory Economics 46 (3), 237-260, 2014 | 10 | 2014 |