Antonio Garcia-Loureiro
Antonio Garcia-Loureiro
Department of Electronics and Computer Science. Universidad de Santiago de Compostela
Verified email at usc.es
TitleCited byYear
Outdoor evaluation of concentrator photovoltaic systems modules from different manufacturers: first results and steps
EF Fernández, P Pérez‐Higueras, AJ Garcia Loureiro, PG Vidal
Progress in Photovoltaics: Research and Applications 21 (4), 693-701, 2013
862013
A two subcell equivalent solar cell model for III–V triple junction solar cells under spectrum and temperature variations
EF Fernández, G Siefer, F Almonacid, AJG Loureiro, P Pérez-Higueras
Solar Energy 92, 221-229, 2013
662013
Implementation of the density gradient quantum corrections for 3-D simulations of multigate nanoscaled transistors
AJ Garcia-Loureiro, N Seoane, M Aldegunde, R Valin, A Asenov, ...
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2011
542011
Multi-subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI
C Sampedro, F Gámiz, A Godoy, R Valin, A Garcia-Loureiro, FG Ruiz
Solid-State Electronics 54 (2), 131-136, 2010
492010
Random dopant, line-edge roughness, and gate workfunction variability in a nano InGaAs FinFET
N Seoane, G Indalecio, E Comesana, M Aldegunde, AJ García-Loureiro, ...
IEEE Transactions on Electron Devices 61 (2), 466-472, 2013
442013
Benchmarking of scaled InGaAs implant-free nanoMOSFETs
K Kalna, N Seoane, AJ Garcia-Loureiro, IG Thayne, A Asenov
IEEE Transactions on Electron Devices 55 (9), 2297-2306, 2008
422008
Quantum corrections based on the 2-D Schrödinger equation for 3-D finite element Monte Carlo simulations of nanoscaled FinFETs
J Lindberg, M Aldegunde, D Nagy, WG Dettmer, K Kalna, ...
IEEE Transactions on Electron Devices 61 (2), 423-429, 2014
382014
Temperature coefficients of monolithic III-V triple-junction solar cells under different spectra and irradiance levels
EF Fernández, G Siefer, M Schachtner, AJ García Loureiro, ...
AIP conference proceedings 1477 (1), 189-193, 2012
362012
3D finite element Monte Carlo simulations of multigate nanoscale transistors
M Aldegunde, AJ García-Loureiro, K Kalna
IEEE Transactions on Electron Devices 60 (5), 1561-1567, 2013
352013
Impact of series and shunt resistances in amorphous silicon thin film solar cells
M Fortes, E Comesana, JA Rodriguez, P Otero, AJ Garcia-Loureiro
Solar Energy 100, 114-123, 2014
332014
Multijunction Concentrator Solar Cells: Analysis and Fundamentals
EF Fernández, AJ García-Loureiro, GP Smestad
High Concentrator Photovoltaics: Fundamentals, Engineering and Power Plants …, 2015
312015
Comparison of fin-edge roughness and metal grain work function variability in InGaAs and Si FinFETs
N Seoane, G Indalecio, M Aldegunde, D Nagy, MA Elmessary, ...
IEEE Transactions on Electron Devices 63 (3), 1209-1216, 2016
282016
FinFET versus gate-all-around nanowire FET: Performance, scaling, and variability
D Nagy, G Indalecio, AJ García-Loureiro, MA Elmessary, K Kalna, ...
IEEE Journal of the Electron Devices Society 6, 332-340, 2018
252018
A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors
A J. García‐Loureiro, JM López‐González, T F. Pena
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2003
242003
Quantifying the effect of air temperature in CPV modules under outdoor conditions
EF Fernández, P Pérez-Higueras, F Almonacid, AJ García Loureiro, ...
AIP conference proceedings 1477 (1), 194-197, 2012
232012
Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes
M Aldegunde, N Seoane, AJ García-Loureiro, K Kalna
Computer Physics Communications 181 (1), 24-34, 2010
232010
Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond
C Sampedro, F Gámiz, A Godoy, R Valín, A García-Loureiro, N Rodríguez, ...
Solid-State Electronics 65, 88-93, 2011
222011
Monolithic III-V triple-junction solar cells under different temperatures and spectra
EF Fernández, AJG Loureiro, PJP Higueras, G Siefer
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, 1-4, 2011
212011
Study of parallel numerical methods for semiconductor device simulation
N Seoane, AJ García‐Loureiro
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2006
212006
Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations
MA Elmessary, D Nagy, M Aldegunde, N Seoane, G Indalecio, J Lindberg, ...
Solid-State Electronics 128, 17-24, 2017
202017
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