Antonio Garcia-Loureiro
Antonio Garcia-Loureiro
Department of Electronics and Computer Science. Universidad de Santiago de Compostela
Verified email at usc.es
Title
Cited by
Cited by
Year
Outdoor evaluation of concentrator photovoltaic systems modules from different manufacturers: first results and steps
EF Fernández, P Pérez‐Higueras, AJ Garcia Loureiro, PG Vidal
Progress in Photovoltaics: Research and Applications 21 (4), 693-701, 2013
872013
A two subcell equivalent solar cell model for III–V triple junction solar cells under spectrum and temperature variations
EF Fernández, G Siefer, F Almonacid, AJG Loureiro, P Pérez-Higueras
Solar Energy 92, 221-229, 2013
672013
Implementation of the density gradient quantum corrections for 3-D simulations of multigate nanoscaled transistors
AJ Garcia-Loureiro, N Seoane, M Aldegunde, R Valin, A Asenov, ...
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2011
562011
Multi-subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI
C Sampedro, F Gámiz, A Godoy, R Valin, A Garcia-Loureiro, FG Ruiz
Solid-State Electronics 54 (2), 131-136, 2010
502010
Random dopant, line-edge roughness, and gate workfunction variability in a nano InGaAs FinFET
N Seoane, G Indalecio, E Comesana, M Aldegunde, AJ Garcia-Loureiro, ...
IEEE Transactions on Electron Devices 61 (2), 466-472, 2013
442013
Benchmarking of scaled InGaAs implant-free nanoMOSFETs
K Kalna, N Seoane, AJ Garcia-Loureiro, IG Thayne, A Asenov
IEEE transactions on electron devices 55 (9), 2297-2306, 2008
432008
Quantum corrections based on the 2-D Schrödinger equation for 3-D finite element Monte Carlo simulations of nanoscaled FinFETs
J Lindberg, M Aldegunde, D Nagy, WG Dettmer, K Kalna, ...
IEEE Transactions on Electron Devices 61 (2), 423-429, 2014
392014
3D finite element Monte Carlo simulations of multigate nanoscale transistors
M Aldegunde, AJ García-Loureiro, K Kalna
IEEE transactions on electron devices 60 (5), 1561-1567, 2013
362013
Temperature coefficients of monolithic III-V triple-junction solar cells under different spectra and irradiance levels
EF Fernández, G Siefer, M Schachtner, AJ García Loureiro, ...
AIP conference proceedings 1477 (1), 189-193, 2012
352012
Multijunction Concentrator Solar Cells: Analysis and Fundamentals
EF Fernández, AJ García-Loureiro, GP Smestad
High Concentrator Photovoltaics: Fundamentals, Engineering and Power Plants …, 2015
342015
Impact of series and shunt resistances in amorphous silicon thin film solar cells
M Fortes, E Comesana, JA Rodriguez, P Otero, AJ Garcia-Loureiro
Solar Energy 100, 114-123, 2014
342014
FinFET versus gate-all-around nanowire FET: performance, scaling, and variability
D Nagy, G Indalecio, AJ García-Loureiro, MA Elmessary, K Kalna, ...
IEEE Journal of the Electron Devices Society 6, 332-340, 2018
322018
Comparison of fin-edge roughness and metal grain work function variability in InGaAs and Si FinFETs
N Seoane, G Indalecio, M Aldegunde, D Nagy, MA Elmessary, ...
IEEE Transactions on Electron Devices 63 (3), 1209-1216, 2016
292016
Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations
MA Elmessary, D Nagy, M Aldegunde, N Seoane, G Indalecio, J Lindberg, ...
Solid-State Electronics 128, 17-24, 2017
242017
Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond
C Sampedro, F Gámiz, A Godoy, R Valín, A García-Loureiro, N Rodríguez, ...
Solid-State Electronics 65, 88-93, 2011
232011
Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes
M Aldegunde, N Seoane, AJ García-Loureiro, K Kalna
Computer Physics Communications 181 (1), 24-34, 2010
232010
A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors
A J. García‐Loureiro, JM López‐González, T F. Pena
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2003
232003
Quantifying the effect of air temperature in CPV modules under outdoor conditions
EF Fernández, P Pérez-Higueras, F Almonacid, AJ García Loureiro, ...
AIP conference proceedings 1477 (1), 194-197, 2012
222012
Study of parallel numerical methods for semiconductor device simulation
N Seoane, AJ García‐Loureiro
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2006
222006
3-D finite element Monte Carlo simulations of scaled Si SOI FinFET with different cross sections
D Nagy, MA Elmessary, M Aldegunde, R Valin, A Martinez, J Lindberg, ...
IEEE Transactions on Nanotechnology 14 (1), 93-100, 2014
202014
The system can't perform the operation now. Try again later.
Articles 1–20