Петр Иванович Гайдук (PI Gaiduk)
Петр Иванович Гайдук (PI Gaiduk)
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Title
Cited by
Cited by
Year
Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy
A Kanjilal, JL Hansen, P Gaiduk, AN Larsen, N Cherkashin, A Claverie, ...
Applied Physics Letters 82 (8), 1212-1214, 2003
1492003
Formation of discontinuous tracks in single-crystalline InP by 250-MeV Xe-ion irradiation
O Herre, W Wesch, E Wendler, PI Gaiduk, FF Komarov, S Klaumünzer, ...
Physical Review B 58 (8), 4832, 1998
971998
Chemical bath deposition of PbS nanocrystals: Effect of substrate
AP Gaiduk, PI Gaiduk, AN Larsen
Thin Solid Films 516 (12), 3791-3795, 2008
812008
Strain-relaxed SiGe/Si heteroepitaxial structures of low threading-dislocation density
PI Gaiduk, AN Larsen, JL Hansen
Thin Solid Films 367 (1-2), 120-125, 2000
652000
Damage evolution in crystalline InP during irradiation with swift Xe ions
PI Gaiduk, FF Komarov, W Wesch
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2000
612000
Ion mass and temperature dependence of damage production in ion implanted InP
E Wendler, T Opfermann, PI Gaiduk
Journal of applied physics 82 (12), 5965-5975, 1997
601997
Discontinuous tracks in arsenic-doped crystalline Si 0.5 Ge 0.5 alloy layers
PI Gaiduk, AN Larsen, C Trautmann, M Toulemonde
Physical Review B 66 (4), 045316, 2002
512002
Damage formation in InP due to high electronic excitation by swift heavy ions
W Wesch, O Herre, PI Gaiduk, E Wendler, S Klaumünzer, P Meier
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1998
441998
Discontinuous tracks in relaxed alloy layers: A velocity effect
PI Gaiduk, AN Larsen, JL Hansen, C Trautmann, M Toulemonde
Applied physics letters 83 (9), 1746-1748, 2003
382003
Track formation in germanium crystals irradiated with superhigh-energy ions
FF Komarov, PI Gaiduk, LA Vlasukova, AJ Didyk, VN Yuvchenko
Vacuum 70 (2-3), 75-79, 2003
322003
Physics, chemistry and application of nanostructures
VE Borisenko, SV Gaponenko, VS Gurin
World Scientific, 2001
322001
Wurtzite InP formation during swift Xe-ion irradiation
PI Gaiduk, FF Komarov, VS Tishkov, W Wesch, E Wendler
Physical Review B 61 (23), 15785, 2000
322000
Nanovoids in MBE-grown SiGe alloys implanted in situ with Ge+ ions
PI Gaiduk, JL Hansen, AN Larsen, EA Steinman
Physical Review B 67 (23), 235310, 2003
302003
Structural and sensing properties of nanocrystalline SnO2 films deposited by spray pyrolysis from a SnCl2 precursor
PI Gaiduk, AN Kozjevko, SL Prokopjev, C Tsamis, AN Larsen
Applied Physics A 91 (4), 667-670, 2008
242008
Damage evolution and track formation in crystalline InP and GaAs during swift Kr and Xe ion irradiation
F Komarov, P Gaiduk, A Kamarou
Vacuum 63 (4), 657-663, 2001
242001
Self-assembling of nanovoids in 800-keV Ge-implanted Si/SiGe multilayered structures
PI Gaiduk, AN Larsen, JL Hansen, E Wendler, W Wesch
Physical Review B 67 (23), 235311, 2003
212003
Si self-interstitial injection from Sb complex formation in Si
J Fage-Pedersen, P Gaiduk, J Lundsgaard Hansen, A Nylandsted Larsen
Journal of Applied Physics 88 (6), 3254-3259, 2000
212000
Band-gap and sub-band-gap photoelectrochemical processes at nanocrystalline CdS grown on ZnO by successive ionic layer adsorption and reaction method
MV Malashchonak, ЕА Streltsov, AV Mazanik, AI Kulak, SK Poznyak, ...
Thin Solid Films 589, 145-152, 2015
202015
Iron distribution in the implanted silicon under the action of high-power pulsed ion and laser beams
R Bayazitov, R Batalov, R Nurutdinov, V Shustov, P Gaiduk, I Dezsi, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2005
202005
The effect of phosphorus background concentration on the diffusion of tin, arsenic and antimony in silicon
AN Larsen, PE Andersen, P Gaiduk, KK Larsen
Materials Science and Engineering: B 4 (1-4), 107-112, 1989
201989
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Articles 1–20