Bin Gao
Bin Gao
Tsinghua University
Verified email at pku.edu.cn
Title
Cited by
Cited by
Year
Face classification using electronic synapses
P Yao, H Wu, B Gao, SB Eryilmaz, X Huang, W Zhang, Q Zhang, N Deng, ...
Nature communications 8 (1), 1-8, 2017
4262017
A low energy oxide‐based electronic synaptic device for neuromorphic visual systems with tolerance to device variation
S Yu, B Gao, Z Fang, H Yu, J Kang, HSP Wong
Advanced Materials 25 (12), 1774-1779, 2013
3922013
A HfOx Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture
S Yu, HY Chen, B Gao, J Kang, HSP Wong
ACS nano, 2013
2972013
Fully hardware-implemented memristor convolutional neural network
P Yao, H Wu, B Gao, J Tang, Q Zhang, W Zhang, JJ Yang, H Qian
Nature 577 (7792), 641-646, 2020
2582020
HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector
HY Chen, S Yu, B Gao, P Huang, J Kang, HSP Wong
2012 International Electron Devices Meeting, 20.7. 1-20.7. 4, 2012
2502012
Gd-doping effect on performance of based resistive switching memory devices using implantation approach
H Zhang, L Liu, B Gao, Y Qiu, X Liu, J Lu, R Han, J Kang, B Yu
Applied Physics Letters 98 (4), 042105, 2011
1922011
Unified physical model of bipolar oxide-based resistive switching memory
B Gao, B Sun, H Zhang, L Liu, X Liu, R Han, J Kang, B Yu
IEEE Electron Device Letters 30 (12), 1326-1328, 2009
1872009
A neuromorphic visual system using RRAM synaptic devices with sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling
S Yu, B Gao, Z Fang, H Yu, J Kang, HSP Wong
2012 International Electron Devices Meeting, 10.4. 1-10.4. 4, 2012
1772012
Ionic doping effect in ZrO resistive switching memory
H Zhang, B Gao, B Sun, G Chen, L Zeng, L Liu, X Liu, J Lu, R Han, J Kang, ...
Applied Physics Letters 96, 123502, 2010
1692010
Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems
B Gao, Y Bi, HY Chen, R Liu, P Huang, B Chen, L Liu, X Liu, S Yu, ...
ACS nano 8 (7), 6998-7004, 2014
1512014
RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study
Y Deng, P Huang, B Chen, X Yang, B Gao, J Wang, L Zeng, G Du, J Kang, ...
IEEE, 2013
1512013
Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology
B Gao, HW Zhang, S Yu, B Sun, LF Liu, XY Liu, Y Wang, RQ Han, ...
2009 Symposium on VLSI Technology, 30-31, 2009
1512009
Oxide-based RRAM switching mechanism: A new ion-transport-recombination model
B Gao, S Yu, N Xu, LF Liu, B Sun, XY Liu, RQ Han, JF Kang, B Yu, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
1482008
Binary neural network with 16 Mb RRAM macro chip for classification and online training
S Yu, Z Li, PY Chen, H Wu, B Gao, D Wang, W Wu, H Qian
2016 IEEE International Electron Devices Meeting (IEDM), 16.2. 1-16.2. 4, 2016
1442016
Stochastic learning in oxide binary synaptic device for neuromorphic computing
S Yu, B Gao, Z Fang, H Yu, J Kang, HSP Wong
Frontiers in neuroscience 7, 186, 2013
1442013
A physics-based compact model of metal-oxide-based RRAM DC and AC operations
P Huang, XY Liu, B Chen, HT Li, YJ Wang, YX Deng, KL Wei, L Zeng, ...
IEEE transactions on electron devices 60 (12), 4090-4097, 2013
1392013
Monitoring Oxygen Movement by Raman Spectroscopy of Resistive Random Access Memory with a Graphene-Inserted Electrode
H Tian, HY Chen, B Gao, S Yu, J Liang, Y Yang, D Xie, J Kang, TL Ren, ...
Nano letters, 2013
1222013
Improved Uniformity of Resistive Switching Behaviors in HfO Thin Films with Embedded Al Layers
S Yu, B Gao, H Dai, B Sun, L Liu, X Liu, R Han, J Kang, B Yu
Electrochemical and Solid-State Letters 13, H36, 2010
1222010
Bridging biological and artificial neural networks with emerging neuromorphic devices: fundamentals, progress, and challenges
J Tang, F Yuan, X Shen, Z Wang, M Rao, Y He, Y Sun, X Li, W Zhang, Y Li, ...
Advanced Materials 31 (49), 1902761, 2019
1212019
Physical mechanisms of endurance degradation in TMO-RRAM
B Chen, Y Lu, B Gao, YH Fu, FF Zhang, P Huang, YS Chen, LF Liu, ...
2011 International Electron Devices Meeting, 12.3. 1-12.3. 4, 2011
1192011
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